Observation of the nonlinear Hall effect under time-reversal-symmetric conditions.

The electrical Hall effect is the production, upon the application of an electric field, of a transverse voltage under an out-of-plane magnetic field. Studies of the Hall effect have led to important breakthroughs, including the discoveries of Berry curvature and topological Chern invariants1,2. The internal magnetization of magnets means that the electrical Hall effect can occur in the absence of an external magnetic field2; this 'anomalous' Hall effect is important for the study of quantum magnets2-7. The electrical Hall effect has rarely been studied in non-magnetic materials without external magnetic fields, owing to the constraint of time-reversal symmetry. However, only in the linear response regime-when the Hall voltage is linearly proportional to the external electric field-does the Hall effect identically vanish as a result of time-reversal symmetry; the Hall effect in the nonlinear response regime is not subject to such symmetry constraints8-10. Here we report observations of the nonlinear Hall effect10 in electrical transport in bilayers of the non-magnetic quantum material WTe2 under time-reversal-symmetric conditions. We show that an electric current in bilayer WTe2 leads to a nonlinear Hall voltage in the absence of a magnetic field. The properties of this nonlinear Hall effect are distinct from those of the anomalous Hall effect in metals: the nonlinear Hall effect results in a quadratic, rather than linear, current-voltage characteristic and, in contrast to the anomalous Hall effect, the nonlinear Hall effect results in a much larger transverse than longitudinal voltage response, leading to a nonlinear Hall angle (the angle between the total voltage response and the applied electric field) of nearly 90 degrees. We further show that the nonlinear Hall effect provides a direct measure of the dipole moment10 of the Berry curvature, which arises from layer-polarized Dirac fermions in bilayer WTe2. Our results demonstrate a new type of Hall effect and provide a way of detecting Berry curvature in non-magnetic quantum materials.

Gigahertz Frequency Antiferromagnetic Resonance and Strong Magnon-Magnon Coupling in the Layered Crystal CrCl_{3}.

We report broadband microwave absorption spectroscopy of the layered antiferromagnet CrCl_{3}. We observe a rich structure of resonances arising from quasi-two-dimensional antiferromagnetic dynamics. Because of the weak interlayer magnetic coupling in this material, we are able to observe both optical and acoustic branches of antiferromagnetic resonance in the GHz frequency range and a symmetry-protected crossing between them. By breaking rotational symmetry, we further show that strong magnon-magnon coupling with large tunable gaps can be induced between the two resonant modes.

Spin-Orbit Torques in NbSe2/Permalloy Bilayers.

We present measurements of current-induced spin-orbit torques generated by NbSe2, a fully metallic transition-metal dichalcogenide material, made using the spin-torque ferromagnetic resonance (ST-FMR) technique with NbSe2/Permalloy bilayers. In addition to the out-of-plane Oersted torque expected from current flow in the metallic NbSe2 layer, we also observe an in-plane antidamping torque with torque conductivity σS ≈ 103 (ℏ/2e)(Ωm)-1 and indications of a weak field-like contribution to the out-of-plane torque oriented opposite to the Oersted torque. Furthermore, in some samples we also measure an in-plane field-like torque with the form m̂ × z, where m̂ is the Permalloy magnetization direction and z is perpendicular to the sample plane. The size of this component varies strongly between samples and is not correlated with the NbSe2 thickness. A torque of this form is not allowed by the bulk symmetries of NbSe2 but is consistent with symmetry breaking by a uniaxial strain that might result during device fabrication.

Breaking of valley degeneracy by magnetic field in monolayer MoSe2.

Using polarization-resolved photoluminescence spectroscopy, we investigate the breaking of valley degeneracy by an out-of-plane magnetic field in back-gated monolayer MoSe2 devices. We observe a linear splitting of -0.22 meV/T between luminescence peak energies in σ+ and σ- emission for both neutral and charged excitons. The optical selection rules of monolayer MoSe2 couple the photon handedness to the exciton valley degree of freedom; so this splitting demonstrates valley degeneracy breaking. In addition, we find that the luminescence handedness can be controlled with a magnetic field to a degree that depends on the back-gate voltage. An applied magnetic field, therefore, provides effective strategies for control over the valley degree of freedom.

Electrical switching of a bistable moiré superconductor.

Electrical control of superconductivity is critical for nanoscale superconducting circuits including cryogenic memory elements1-4, superconducting field-effect transistors (FETs)5-7 and gate-tunable qubits8-10. Superconducting FETs operate through continuous tuning of carrier density, but no bistable superconducting FET, which could serve as a new type of cryogenic memory element, has been reported. Recently, gate hysteresis and resultant bistability in Bernal-stacked bilayer graphene aligned to its insulating hexagonal boron nitride gate dielectrics were discovered11,12. Here we report the observation of this same hysteresis in magic-angle twisted bilayer graphene (MATBG) with aligned boron nitride layers. This bistable behaviour coexists alongside the strongly correlated electron system of MATBG without disrupting its correlated insulator or superconducting states. This all-van der Waals platform enables configurable switching between different electronic states of this rich system. To illustrate this new approach, we demonstrate reproducible bistable switching between the superconducting, metallic and correlated insulator states of MATBG using gate voltage or electric displacement field. These experiments unlock the potential to broadly incorporate this new switchable moiré superconductor into highly tunable superconducting electronics.

Pauli blocking effect on Efimov states near a Feshbach resonance.

In this Letter we study the effect of Pauli blocking on Efimov states in a quantum Fermi gas and illustrate that the universal Efimov potential is altered at large distances. We obtain the universal spectrum flow of Efimov trimers when the Fermi density is varied and further consider the effect of scattering of trimers by the Fermi sea. We argue that the universal flow is robust against fluctuating particle-hole pairs that result in an infrared catastrophe in impurity problems.

Deep-Learning-Enabled Fast Optical Identification and Characterization of 2D Materials.

Advanced microscopy and/or spectroscopy tools play indispensable roles in nanoscience and nanotechnology research, as they provide rich information about material processes and properties. However, the interpretation of imaging data heavily relies on the "intuition" of experienced researchers. As a result, many of the deep graphical features obtained through these tools are often unused because of difficulties in processing the data and finding the correlations. Such challenges can be well addressed by deep learning. In this work, the optical characterization of 2D materials is used as a case study, and a neural-network-based algorithm is demonstrated for the material and thickness identification of 2D materials with high prediction accuracy and real-time processing capability. Further analysis shows that the trained network can extract deep graphical features such as contrast, color, edges, shapes, flake sizes, and their distributions, based on which an ensemble approach is developed to predict the most relevant physical properties of 2D materials. Finally, a transfer learning technique is applied to adapt the pretrained network to other optical identification applications. This artificial-intelligence-based material characterization approach is a powerful tool that would speed up the preparation, initial characterization of 2D materials and other nanomaterials, and potentially accelerate new material discoveries.

Current-Induced Torques with Dresselhaus Symmetry Due to Resistance Anisotropy in 2D Materials.

We report measurements of current-induced torques in heterostructures of Permalloy (Py) with TaTe2, a transition-metal dichalcogenide (TMD) material possessing low crystal symmetry, and observe a torque component with Dresselhaus symmetry. We suggest that the dominant mechanism for this Dresselhaus component is not a spin-orbit torque but rather the Oersted field arising from a component of current that flows perpendicular to the applied voltage due to resistance anisotropy within the TaTe2. This type of transverse current is not present in wires made from a single uniform layer of a material with resistance anisotropy but will result whenever a material with resistance anisotropy is integrated into a heterostructure with materials having different resistivities, thereby producing a spatially nonuniform pattern of current flow. This effect will therefore influence measurements in a wide variety of heterostructures incorporating 2D TMD materials and other materials with low crystal symmetries.

Electrical control of 2D magnetism in bilayer CrI3.

Controlling magnetism via electric fields addresses fundamental questions of magnetic phenomena and phase transitions1-3, and enables the development of electrically coupled spintronic devices, such as voltage-controlled magnetic memories with low operation energy4-6. Previous studies on dilute magnetic semiconductors such as (Ga,Mn)As and (In,Mn)Sb have demonstrated large modulations of the Curie temperatures and coercive fields by altering the magnetic anisotropy and exchange interaction2,4,7-9. Owing to their unique magnetic properties10-14, the recently reported two-dimensional magnets provide a new system for studying these features15-19. For instance, a bilayer of chromium triiodide (CrI3) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition15,16. Here, we demonstrate electrostatic gate control of magnetism in CrI3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states that exhibit spin-layer locking, leading to a linear dependence of their MOKE signals on gate voltage with opposite slopes. Our results allow for the exploration of new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.

From macroscopic yield criteria to atomic stresses in polymer glasses.

The relationship between macroscopic shear yield criteria and local stress distributions in deformed polymer glasses is investigated via molecular dynamics simulations on different scales of coarse-graining. Macroscopic shear stresses at the yield point obey a pressure-modified von Mises (pmvM) criterion for many different loading conditions and strain rates. Average local stresses in small volume elements obey the same yield criterion for volumes containing approx. 100 atoms or more. Qualitatively different behavior is observed on smaller scales: the average octahedral atomic shear stress has a simple linear relationship to hydrostatic pressure regardless of macroscopic stress state and failure mode. Local plastic events are identified through a threshold in the mean-squared nonaffine displacement and compared to the local stress state. We find that the pmvM criterion only predicts local yield events when stress and displacements are averaged over at least 100 atoms. By contrast, macroscopic shear yield criteria appear to lose their ability to predict plastic activity on the atomic scale.