Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode.

We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

Effects of Surface Chemistry and Topology on the Kinesin-Driven Motility of Microtubule Shuttles.

Nanoscale transport using the kinesin-microtubule system has been successfully used in applications ranging from self-assembly, to biosensing, to biocomputation. Realization of such applications necessitates robust microtubule motility particularly in the presence of complex sample matrices that can affect the interactions of the motors with the surface and the transport function. In the present work, we explored how the chemical nature and nanoscale topology of various surfaces affected kinesin-microtubule transport. Specifically, we characterized microtubule motility on three distinct interfaces: (i) surfaces modified with self-assembled monolayers (SAMs) displaying three different terminal groups, (ii) SAM-modified surfaces with adsorbed fetal bovine serum (FBS) proteins, and (iii) surfaces where the FBS layer was silicified to preserve an underlying surface topology. The composition and topology of each surface was confirmed with a number of techniques including X-ray photoelectron spectroscopy (XPS), water contact angle, atomic force microscopy (AFM), and scanning electron microscopy (SEM). The majority of surfaces, with the exception of those with the hydrophobic SAM, supported gliding motility consistent with the glass control. Differences in the displacement, velocity, and trajectory of the leading tip of the microtubule were observed in relation to the specific surface chemistry and, to a lesser extent, the nanoscale topology of the different substrates. Overall, this work broadens our understanding of how surface functionality and topology affect kinesin-based transport and provides valuable insights regarding future development of biosensing and probing applications that rely on biomolecular transport.

Graphene-Insulator-Semiconductor Junction for Hybrid Photodetection Modalities.

A sensitive optical detector is presented based on a deeply depleted graphene-insulator-semiconducting (D2GIS) junction, which offers the possibility of simultaneously leveraging the advantages of both charge integration and localized amplification. Direct read-out and built-in amplification are accomplished via photogating of a graphene field-effect transistor (GFET) by carriers generated within a deeply depleted low-doped silicon substrate. Analogous to a depleted metal-oxide-semiconducting junction, photo-generated charge collects in the potential well that forms at the semiconductor/insulator interface and induces charges of opposite polarity within the graphene film modifying its conductivity. This device enables simultaneous photo-induced charge integration with continuous "on detector" readout through use of graphene. The resulting devices exhibit responsivities as high as 2,500 A/W (25,000 S/W) for visible wavelengths and a dynamic range of 30 dB. As both the graphene and device principles are transferrable to arbitrary semiconductor absorbers, D2GIS devices offer a high-performance paradigm for imaging across the electromagnetic spectrum.