Development of Photonic Multi-Sensing Systems Based on Molecular Gates Biorecognition and Plasmonic Sensors: The PHOTONGATE Project.

This paper presents the concept of a novel adaptable sensing solution currently being developed under the EU Commission-founded PHOTONGATE project. This concept will allow for the quantification of multiple analytes of the same or different nature (chemicals, metals, bacteria, etc.) in a single test with levels of sensitivity and selectivity at/or over those offered by current solutions. PHOTONGATE relies on two core technologies: a biochemical technology (molecular gates), which will confer the specificity and, therefore, the capability to be adaptable to the analyte of interest, and which, combined with porous substrates, will increase the sensitivity, and a photonic technology based on localized surface plasmonic resonance (LSPR) structures that serve as transducers for light interaction. Both technologies are in the micron range, facilitating the integration of multiple sensors within a small area (mm2). The concept will be developed for its application in health diagnosis and food safety sectors. It is thought of as an easy-to-use modular concept, which will consist of the sensing module, mainly of a microfluidics cartridge that will house the photonic sensor, and a platform for fluidic handling, optical interrogation, and signal processing. The platform will include a new optical concept, which is fully European Union Made, avoiding optical fibers and expensive optical components.

Rapid synthesis of ultra-long silver nanowires for tailor-made transparent conductive electrodes: proof of concept in organic solar cells.

Rapid synthesis of ultralong silver nanowires (AgNWs) has been obtained using a one-pot polyol-mediated synthetic procedure. The AgNWs have been prepared from the base materials in less than one hour with nanowire lengths reaching 195 µm, which represents the quickest synthesis and one of the highest reported aspect ratios to date. These results have been achieved through a joint analysis of all reaction parameters, which represents a clear progress beyond the state of the art. Dispersions of the AgNWs have been used to prepare thin, flexible, transparent and conducting films using spray coating. Due to the higher aspect ratio, an improved electrical percolation network is observed. This allows a low sheet resistance (RS = 20.2 Ω/sq), whilst maintaining high optical film transparency (T = 94.7%), driving to the highest reported figure-of-merit (FoM = 338). Owing to the light-scattering influence of the AgNWs, the density of the AgNW network can also be varied to enable controllability of the optical haze through the sample. Based on the identification of the optimal haze value, organic photovoltaics (OPVs) have been fabricated using the AgNWs as the transparent electrode and have been benchmarked against indium tin oxide (ITO) electrodes. Overall, the performance of OPVs made using AgNWs sees a small decrease in power conversion efficiency (PCE), primarily due to a fall in open-circuit voltage (50 mV). This work indicates that AgNWs can provide a low cost, rapid and roll-to-roll compatible alternative to ITO in OPVs, with only a small compromise in PCE needed.

Characterization of doped amorphous silicon thin films through the investigation of dopant elements by glow discharge spectrometry: a correlation of conductivity and bandgap energy measurements.

The determination of optical parameters, such as absorption and extinction coefficients, refractive index and the bandgap energy, is crucial to understand the behavior and final efficiency of thin film solar cells based on hydrogenated amorphous silicon (a-Si:H). The influence of small variations of the gas flow rates used for the preparation of the p-a-SiC:H layer on the bandgap energy, as well as on the dopant elements concentration, thickness and conductivity of the p-layer, is investigated in this work using several complementary techniques. UV-NIR spectrophotometry and ellipsometry were used for the determination of bandgap energies of four p-a-SiC:H thin films, prepared by using different B(2)H(6) and SiH(4) fluxes (B(2)H(6) from 12 sccm to 20 sccm and SiH(4) from 6 sccm to 10 sccm). Moreover, radiofrequency glow discharge optical emission spectrometry technique was used for depth profiling characterization of p-a-SiC:H thin films and valuable information about dopant elements concentration and distribution throughout the coating was found. Finally, a direct relationship between the conductivity of p-a-SiC:H thin films and the dopant elements concentration, particularly boron and carbon, was observed for the four selected samples.

Depth profile analysis of amorphous silicon thin film solar cells by pulsed radiofrequency glow discharge time of flight mass spectrometry.

Among the different solar cell technologies, amorphous silicon (a-Si:H) thin film solar cells (TFSCs) are today very promising and, so, TFSCs analytical characterization for quality control issues is increasingly demanding. In this line, depth profile analysis of a-Si:H TFSCs on steel substrate has been investigated by using pulsed radiofrequency glow discharge-time of flight mass spectrometry (rf-PGD-TOFMS). First, to discriminate potential polyatomic interferences for several analytes (e.g., (28)Si(+), (31)P(+), and (16)O(+)) appropriate time positions along the GD pulse profile were selected. A multi-matrix calibration approach, using homogeneous certified reference materials without hydrogen as well as coated laboratory-made standards containing hydrogen, was employed for the methodological calibration. Different calibration strategies (in terms of time interval selection on the pulse profile within the afterglow region) have been compared, searching for optimal calibration graphs correlation. Results showed that reliable and fast quantitative depth profile analysis of a-Si:H TFSCs by rf-PGD-TOFMS can be achieved.

Endogenous and exogenous hydrogen influence on amorphous silicon thin films analysis by pulsed radiofrequency glow discharge optical emission spectrometry.

During the last decade the photovoltaic industry has been growing rapidly. One major strategy to reduce the production costs is the use of thin film solar cells based on hydrogenated amorphous silicon (a-Si:H). The potential of pulsed radiofrequency glow discharge coupled to optical emission spectrometry (rf-PGD-OES) for the analysis of such type of materials has been investigated in this work. It is known that when hydrogen is present in the argon discharge, even in small quantities, significant changes can occur in the emission intensities and sputtering rates measured. Therefore, a critical comparison has been carried out by rf-PGD-OES, in terms of emission intensities, penetration rates and depth resolution for two modes of hydrogen introduction in the discharge, manually external hydrogen in gaseous form (0.2% H(2)-Ar) or internal hydrogen, sputtered as a sample constituent. First, a comparative optimisation study (at 600 Pa and 50 W) was performed on conducting materials and on a silicon wafer varying the pulse parameters: pulse frequency (500 Hz-20 kHz) and duty cycle (12.5-50%). Finally, 600 Pa, 50 W, 10 kHz and 25% duty cycle were selected as the optimum conditions to analyse three types of hydrogenated samples: an intrinsic, a B-doped and a P-doped layer based on a-Si:H. Enhanced emission intensities have been measured for most elements in the presence of hydrogen (especially for silicon) despite the observed reduced sputtering rate. The influence of externally added hydrogen and that of hydrogen sputtered as sample constituent from the analysed samples has been evaluated.

Quantitative depth profile analysis of metallic coatings by pulsed radiofrequency glow discharge optical emission spectrometry.

In recent years particular effort is being devoted towards the development of pulsed GDs because this powering operation mode could offer important analytical advantages. However, the capabilities of radiofrequency (rf) powered glow discharge (GD) in pulsed mode coupled to optical emission spectrometry (OES) for real depth profile quantification has not been demonstrated yet. Therefore, the first part of this work is focussed on assessing the expected advantages of the pulsed GD mode, in comparison with its continuous mode counterpart, in terms of analytical emission intensities and emission yield parameters. Then, the capability of pulsed rf-GD-OES for determination of thickness and compositional depth profiles is demonstrated by resorting to a simple multi-matrix calibration procedure. A rf forward power of 50 W, a pressure of 600 Pa, 1000 Hz pulse frequency and 50% duty cycle were selected. The quantification procedure used was validated by analysing conductive layers of thicknesses ranging from a few tens of nanometer up to about 20 µm and varied compositions (hot-dipped zinc, galvanneal, back contact of thin film photovoltaic solar cells and tinplates).