Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs1-xSbx Shell on InAs Nanowires.

A chemical short-range order is found in single monolayer InAs1-xSbx shells, which inherit a wurtzite structure from the underlying InAs nanowire, instead of crystallizing in the energetically preferred zincblende structure. The chemical order is characterized by an anticorrelation ordering vector in the ⟨112̅0⟩ direction and arises from strong Sb-Sb repulsive interactions along the atomic chains in the ⟨112̅0⟩ direction.

Composition modulation by twinning in InAsSb nanowires.

We observe a composition modulated axial heterostructure in zincblende (ZB) InAs0.90Sb0.10 nanowires initiated by pseudo-periodic twin boundaries using scanning tunneling microscopy. The twin boundaries exhibit four planes with reduced Sb concentration due to a lower Sb incorporation during lateral overgrowth of a 4H wurtzite as compared to a ZB stacking sequence. We anticipate that this leads to compositional band offsets in addition to known structural band offsets present between 4H and ZB polytypes, changing the band alignment from type II to type I.

Narrowing the length distribution of Ge nanowires.

Synthesis of nanostructures of uniform size is fundamental because the size distribution directly affects their physical properties. We present experimental data demonstrating a narrowing effect on the length distribution of Ge nanowires synthesized by the Au-catalyzed molecular beam epitaxy on Si substrates. A theoretical model is developed that is capable of describing this puzzling behavior. It is demonstrated that the direction of the diffusion flux of sidewall adatoms is size dependent and has a major effect on the growth rate of differently sized nanowires. We also show that there exists a fundamental limitation on the maximum nanowire length that can be achieved by molecular beam epitaxy where the direction of the beam is close to the growth axis.

Kelvin force microscopy at the second cantilever resonance: an out-of-vacuum crosstalk compensation setup.

We investigate the gap-voltage control loop in a Kelvin force microscopy setup with simultaneous non-contact topography imaging. The Kelvin controller electrostatically excites the second resonance of the cantilever at about 6.3 times the first resonance frequency and adjusts the DC component of the gap voltage to cancel the oscillation amplitude at this frequency, while the non-contact topography imaging is based on a frequency control loop that maintains a constant frequency of the mechanically excited first resonance of the cantilever by adjusting the tip-sample separation. Due to the self-excitation of the first resonance in our setup, it has to be considered that the electrostatic excitation at the second resonance frequency is applied to a closed feedback loop and cannot be considered as a simple superposition to the oscillation at the first resonance frequency. In particular, special care has to be taken about internal capacitive crosstalk between the tip bias and the cantilever deflection output signal. It is shown that such a coupling cannot be corrected by subtraction of a constant offset at the demodulator output since the crosstalk is sent into the self-excitation loop and is multiplied by the closed loop transfer function. We present a circuit that actively compensates, outside the vacuum environment, the internal crosstalk by adding to the deflection output a dephased fraction of the electrostatic excitation signal.

NanoARPES of twisted bilayer graphene on SiC: absence of velocity renormalization for small angles.

The structural and electronic properties of twisted bilayer graphene (TBG) on SiC(000) grown by Si flux-assisted molecular beam epitaxy were investigated using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy with nanometric spatial resolution. STM images revealed a wide distribution of twist angles between the two graphene layers. The electronic structure recorded in single TBG grains showed two closely-spaced Dirac π bands associated to the two stacked layers with respective twist angles in the range 1-3°. The renormalization of velocity predicted in previous theoretical calculations for small twist angles was not observed.

Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes

We have investigated the electronic structure of the conduction band states in InAs quantum boxes embedded in GaAs. Using cross-sectional scanning tunneling microscopy and spectroscopy, we report the direct observation of standing wave patterns in the boxes at room temperature. Electronic structure calculation of similar cleaved boxes allows the identification of the standing waves pattern as the probability density of the ground and first excited states. Their spatial distribution in the (001) plane is significantly affected by the strain relaxation due to the cleavage of the boxes.

Dynamic behavior of amplitude detection Kelvin force microscopy in ultrahigh vacuum.

The acquisition rate of all scanning probe imaging techniques with feedback control is limited by the dynamic response of the control loops. Performance criteria are the control loop bandwidth and the output signal noise power spectral density. Depending on the acceptable noise level, it may be necessary to reduce the sampling frequency below the bandwidth of the control loop. In this work, the frequency response of a vacuum Kelvin force microscope with amplitude detection (AM-KFM) using a digital signal processing (DSP) controller is characterized and optimized. Then, the main noise source and its impact on the output signal is identified. A discussion follows on how the system design can be optimized with respect to output noise. Furthermore, the interaction between Kelvin and distance control loop is studied, confirming the beneficial effect of KFM on topography artefact reduction in the frequency domain. The experimental procedure described here can be generalized to other systems and allows to locate the performance limitations.