RESUMO
We demonstrate for the first time that a single compact, electrically contacted indium phosphide based microdisk heterogeneously integrated on a silicon-on-insulator waveguide can be used as both a high-speed modulator and photo detector. We demonstrate high-speed operation up to 10 Gb/s and present bit-error rate results of both operation modes.
RESUMO
We report on the modulation characteristics of indium phosphide (InP) based microdisks heterogeneously integrated on a silicon-on-insulator (SOI) waveguide. We present static extinction ratios and dynamic operation up to 10 Gb/s. Operation with a bit-error rate below 1 × 10(-9) is demonstrated at 2.5, 5.0 and 10.0 Gb/s and the performance is compared with that of a commercial modulator. Power penalties are analyzed with respect to the pattern length. The power consumption is calculated and compared with state-of-the-art integrated modulator concepts. We demonstrate that InP microdisk modulators combine low-power and low-voltage operation with low footprint and high-speed. Moreover, the devices can be fabricated using the same technology as for lasers, detectors and wavelength converters, making them very attractive for co-integration.
Assuntos
Índio/química , Fosfinas/química , Refratometria/instrumentação , Processamento de Sinais Assistido por Computador/instrumentação , Ressonância de Plasmônio de Superfície/instrumentação , Desenho Assistido por Computador , Desenho de Equipamento , Análise de Falha de Equipamento , Integração de SistemasRESUMO
We demonstrate an all-optical switch based on a waveguide-embedded 1D photonic crystal cavity fabricated in silicon-on-insulator technology. Light at the telecom wavelength is modulated at high-speed by control pulses in the near infrared, harnessing the plasma dispersion effect. The actual absorbed switching power required for a 3 dB modulation depth is measured to be as low as 6 fJ. While the switch-on time is on the order of a few picoseconds, the relaxation time is almost 500 ps and limited by the lifetime of the charge carriers.
RESUMO
We demonstrate the suitability of microcavities based on circular grating resonators (CGRs) as fast switches. This type of optical resonator is characterized by a high quality factor and very small mode volume. The waveguide-coupled CGRs are fabricated with silicon-on-insulator technology compatible with standard complementary metal-oxide semiconductor (CMOS) processing. The linear optical properties of the CGRs are investigated by transmission spectroscopy. From 3D finite-difference time-domain simulations of isolated CGRs, we identify the measured resonances. We probe the spatial distribution and the parasitic losses of a resonant optical mode with scanning near-field optical microscopy. We observe fast all-optical switching within a few picoseconds by optically generating free charge carriers within the cavity.
Assuntos
Refratometria/instrumentação , Processamento de Sinais Assistido por Computador/instrumentação , Transdutores , Desenho de Equipamento , Análise de Falha de Equipamento , Reprodutibilidade dos Testes , Sensibilidade e EspecificidadeRESUMO
The development of silicon photonics could greatly benefit from the linear electro-optical properties, absent in bulk silicon, of ferroelectric oxides, as a novel way to seamlessly connect the electrical and optical domain. Of all oxides, barium titanate exhibits one of the largest linear electro-optical coefficients, which has however not yet been explored for thin films on silicon. Here we report on the electro-optical properties of thin barium titanate films epitaxially grown on silicon substrates. We extract a large effective Pockels coefficient of r(eff) = 148 pm V(-1), which is five times larger than in the current standard material for electro-optical devices, lithium niobate. We also reveal the tensor nature of the electro-optical properties, as necessary for properly designing future devices, and furthermore unambiguously demonstrate the presence of ferroelectricity. The integration of electro-optical active films on silicon could pave the way towards power-efficient, ultra-compact integrated devices, such as modulators, tuning elements and bistable switches.