Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core-Shell Nanowires.

We report the first selective-area growth of high quality InAs(Sb)/GaSb core-shell nanowires on Si substrates using metal-organic chemical vapor deposition (MOCVD) without foreign catalysts. Transmission electron microscopy (TEM) analysis reveals that the overgrowth of the GaSb shell is highly uniform and coherent with the InAs(Sb) core without any misfit dislocations. To control the structural properties and reduce the planar defect density in the self-catalyzed InAs core nanowires, a trace amount of Sb was introduced during their growth. As the Sb content increases from 0 to 9.4%, the crystal structure of the nanowires changes from a mixed wurtzite (WZ)/zinc-blende (ZB) structure to a perfect ZB phase. Electrical measurements reveal that both the n-type InAsSb core and p-type GaSb shell can work as active carrier transport channels, and the transport type of core-shell nanowires can be tuned by the GaSb shell thickness and back-gate voltage. This study furthers our understanding of the Sb-induced crystal-phase control of nanowires. Furthermore, the high quality InAs(Sb)/GaSb core-shell nanowire arrays obtained here pave the foundation for the fabrication of the vertical nanowire-based devices on a large scale and for the study of fundamental quantum physics.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts.

We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed ⟨110⟩ directions on an [100]-oriented substrate, two ⟨100⟩ directions plus four ⟨111⟩ directions on an [110]-oriented substrate, and six equivalent ⟨112⟩ directions on an [111]-oriented substrate, which correspond to the projections of ⟨111⟩ family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p-n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III-V nanodevices.

InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition.

We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb flow rate is used, whereas the droplets are missing and the radial growth of the GaSb is enhanced due to a reduction in the diffusion length of the Ga adatoms when the TMSb flow rate is increased. Moreover, transmission electron microscopy measurements revealed that the GaSb shell coherently grew on the InAs core. The results obtained here show that the InAs/GaSb core-shell nanowires grown using the Si platform have strong potential in the fabrication of future nanometer-scale devices and in the study of fundamental quantum physics.

One-atmosphere aqueous-solution synthesis of trimolybdate nanomaterials and the feasibility for mass production.

Mass production of low-cost functional nanomaterials is an important issue for the development of nanoscience and nanotechnology. With rich structural, physical and chemical properties, polyoxometalates are important functional materials for both industrial applications and fundamental research. We presented a family of alkali trimolybdate nanowires and nanorods that were synthesized by a one-atmosphere aqueous solution method from a mixture of two solutions, one consisting of (NH4)6Mo7O24 x 4H2O and the other of Li+, Na+, K+ and Rb+ ions, respectively. This family showed clear similarities in their Raman and infrared spectra. By systematic characterizations, we have figured out a universal formula theta(m)(NH4)(2-m)Mo3O10 x nH2O (theta = Li, Na, K, Rb; m = 1,2) for this family of hydrate nanomaterials. Among them, two new phases, namely Li2Mo3O10 x H2O and Rb2Mo3O10 x 3 x 4H2O were recognized. The method was also applied to synthesizing Ag-doped trimolybdate nanowires, and the feasibility for mass production of these nanomaterials with a continuous synthesis experiment was also clear demonstrated. The results of this work offered interesting experimental data for theoretical analysis of the unique growth mechanism.

Amazing ageing property and in situ comparative study of field emission from tungsten oxide nanowires.

In this work, needle-shaping of tungsten oxide nanowires occurred during field emission characterization. Compared with nanowires with a flat apex, needle-shaped emitters showed a lower threshold field of 11.9 V µm(-1) for 1 mA cm(-2) and a higher emission current of 1120 µA at 16.2 V µm(-1). Most notably, the measured ageing current dramatically increased by more than four times until it slightly decreased, tending towards stability. In addition, the samples showed striking difference in their nonlinear Fowler-Nordheim plot before and after ageing tests. Selected area diffraction and transmission electron microscope characterizations were used to further study these amazing results.

Room temperature synthesis of K2Mo3O10x3H2O nanowires in minutes.

Polyoxometalates have been widely used in the fields of catalysis, analytical chemistry, biochemistry, medicine and synthesis of novel organic-inorganic materials. It is difficult to synthesize pure polymolybdate products from a solution because several kinds of molybdenum-based anions may coexist. As a result, varied acidification methods are commonly used for solution synthesis of polymolybdates. In this paper we report an approach for the synthesis of [001]-oriented K(2)Mo(3)O(10)x3H(2)O nanowires from an aqueous solution of (NH(4))(6)Mo(7)O(24)x4H(2)O and KCl at low temperatures. The reaction occurs even at temperatures as low as 0 degrees C, and at 30-90 degrees C the whole procedure needs only a few minutes. Without any additional acidification treatments, the pH value of the solution is maintained in a narrow range of +/- 0.1 between 4.9 and 5.5 during the whole synthesis procedure. The starting pH depends on the reaction temperature. Crystalline structure and purity of the final products have been characterized with x-ray diffraction, electron diffraction and dehydration measurements. This simple and rapid method provides a unique case for studying the growth mechanism of polymolybdate nanostructures, and has a promising potential in the mass production of low-cost, pure-phase polymolybdates for a variety of applications.

Applied Stress-Assisted Growth of Single Crystal γ-Fe2O3 Nanowires.

It is difficult to obtain γ-Fe2O3 nanostructures by heating iron substrate in ambient conditions because γ-Fe2O3 is less thermodynamically stable than α-Fe2O3. In this work, we synthesize γ-Fe2O3 nanowires by heating iron particles under an external force. The stacking style of iron and oxygen ions under a strong shearing stress tends to adopt the γ-Fe2O3 structure regardless of the thermodynamic restriction. These γ-Fe2O3 nanowires exhibit a clear ferromagnetic property. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) measurements confirm that γ-phase structure appears only under the applied external force during the heating period. A window of the magnitude of the external force is found to help the nanowire growth on iron particles. The growth mechanism of γ-Fe2O3 nanowires other than α-Fe2O3 under the external force is discussed and an applied stress-assisted growth model is proposed. This work presents an easy approach to produce ferromagnetic iron oxide nanowires on a large scale.

Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process.

We report on a simple but powerful approach to grow high material quality InSb and GaSb nanowires in a commonly used tube furnace setup. The approach employs a process of stable heating at a high temperature and then cooling down naturally to room temperature with the nanowire growth occurred effectively during the naturally cooling step. As-grown nanowires are analyzed using a scanning electron microscope and a transmission electron microscope equipped with an energy-dispersive X-ray spectroscopy setup. It is shown that the grown nanowires are several micrometers in lengths and are zincblende InSb and GaSb crystals. The FET devices are also fabricated with the grown nanowires and investigated. It is shown that the grown nanowires show good, desired electrical properties and should have potential applications in the future nanoelectronics and infrared optoelectronics.

The first observation of carbon nanotubes by spherical aberration corrected high-resolution transmission electron microscopy.

High-resolution transmission electron microscopy (HRTEM) of multi-wall carbon nanotubes using a spherical aberration correction of the objective lens has shown a new possibility for the observation of nanometre-sized tubular materials. Improvement of the image resolution along a direction parallel to that of electron incidence enables one to obtain some information on the local height of the tubes, and in lateral directions better than 0.14 nm at 200 kV accelerating voltage, the possibility of direct determination of the chirality of the tubes and the observation of finer atomic structures of carbon atoms such as 'hexagon' ones is suggested. Spherical aberration corrected HRTEM begins a new stage of the structural study of nano-tubular materials.

InAs-mediated growth of vertical InSb nanowires on Si substrates.

In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-droplet-ended nanowires are longer than the other group of nanowires. For both groups of InSb nanowires, InAs layers play an important role in their formation by serving as a template for growing InSb nanowires. The results presented in this work suggest a useful approach to grow catalyst-free InSb nanowires on Si substrates, which is significant for their device applications.