Modeling for High-Frequency Spurious Responses in Incredible High-Performance Surface Acoustic Wave Devices.

To ensure that surface acoustic wave (SAW) filters fulfill the requirements of Carrier Aggregation (CA) applications, the development of modeling tools that can forecast and simulate high-frequency spurious responses has been necessary. This paper presents an advanced methodology for extending the coupling-of-modes (COM) model to obtain precise modeling of the high-frequency spurious responses of incredible high-performance surface acoustic wave (I.H.P. SAW) devices. The extended COM (ECOM) model is derived by modifying the conventional COM model and extending it accordingly. The parameters used in this model are determined through numerical fitting. For validation, firstly, the ECOM model is applied to a one-port synchronous I.H.P. SAW resonator, and the simulation and measurement results match. Then, the structural parameters of the ECOM model are varied, and the accuracy of the model after the structural parameters are varied is verified. It is demonstrated that this model can be applied to the design work of SAW filters. Finally, the ECOM model is applied to the design of the I.H.P. SAW filter based on a 42°YX-LiTaO3 (LT)/SiO2/AlN/Si structure. By using this method, the I.H.P. SAW filter's high-frequency spurious response can be predicted more accurately.

An Infrared Near-Sensor Reservoir Computing System Based on Large-Dynamic-Space Memristor with Tens of Thousands of States for Dynamic Gesture Perception.

To efficiently process the massive amount of sensor data, it is demanding to develop a new paradigm. Inspired by neurobiological systems, an infrared near-senor reservoir computing (RC) system, consisting of infrared sensors and memristors based on single-crystalline LiTaO3 and LiNbO3 (LN) thin film respectively, is demonstrated. The analog memristor is used as a reservoir in the RC system to process sensor signals with spatiotemporal characteristics. LN crystal structure stacked with oxygen octahedra provides favorable conditions for reliable Mott variable-range hopping conduction, which provides the memristor with tens of thousands of reservoir states within a large dynamic range. With the characteristics, the analog sensor signals with high data fidelity can be directly fed to the memristive reservoir, and the spatiotemporal features can be separated and mapped. The system demonstrated a dynamic gesture perception task, achieving an accuracy of 99.6%, which highlights the great application potential of the memristor in signal sensor processing and will advance the application of artificial intelligence in sensor systems. Crystal ion slicing techniques are used to fabricate a single-crystalline thin film for both the memristor and sensor, which opens up the possibility of realizing monolithic integration of a memristor-based near-sensor computing system.

Designed Structures of Interdigital Electrodes for Thin Film SAW Devices.

This paper studied the impact of the microstructure of interdigital electrodes on the performance of surface acoustic wave (SAW) resonators and proposed an innovative piston, dummy finger and tilt (PDT) structure, which was then applied to the GLONASS L3 band filters. Through the adoption of 3D finite element simulation (FEM), photolithography, and testing on an incredible high-performance surface acoustic wave (I.H.P. SAW) substrate, it is concluded that the total aperture length is 20T (T is period), resulting in a more optimal resonator performance; changing the width and length of the piston can suppress transverse modes spurious, but it does not enhance impedance ratio; to further improve the quality of the SAW resonator, the proposed PDT structure has been experimentally proven to not only effectively suppress transverse modes spurious but also possess a high impedance ratio. By utilizing a PDT structure within a "T + π" topology circuit, we successfully designed and manufactured a GLONASS L3 band filter with a bandwidth of 8 MHz and an insertion loss of 3.73 dB. The design of these resonators and filters can be applied to the construction of SAW filters in similar frequency bands such as BeiDou B2 band or GPS L2/L5 band.

Dual functional states of working memory realized by memristor-based neural network.

Working memory refers to the brain's ability to store and manipulate information for a short period. It is disputably considered to rely on two mechanisms: sustained neuronal firing, and "activity-silent" working memory. To develop a highly biologically plausible neuromorphic computing system, it is anticipated to physically realize working memory that corresponds to both of these mechanisms. In this study, we propose a memristor-based neural network to realize the sustained neural firing and activity-silent working memory, which are reflected as dual functional states within memory. Memristor-based synapses and two types of artificial neurons are designed for the Winner-Takes-All learning rule. During the cognitive task, state transformation between the "focused" state and the "unfocused" state of working memory is demonstrated. This work paves the way for further emulating the complex working memory functions with distinct neural activities in our brains.

Controllable modulation of the oxygen vacancy-induced adjustment of memristive behavior for direct differential operation with transistor-free memristor.

To achieve the goal of neuromorphic computing hardware implementation with extremely high efficiency, low power consumption, and high density, it is necessary to develop transistor-free memristors and implement differential operation without subtraction circuits. In this study, argon ion irradiation was used during the fabrication process of a single crystalline LiNbO3 (LN) thin film to controllably introduce oxygen vacancies (OVs) into the bottom surface, which realized the modulation of OVs based on the excellent environment provided by a single-crystalline thin film. The memristive behavior of memristors was then modulated by regulating the distribution of OVs, and the effect of OVs distributed near the bottom surface of the single crystalline LN thin film on the memristive behavior was analyzed. In this way, two transistor-free memristors with opposite memristive behavior directions were fabricated. Two transistor-free memristors exhibit excellent synaptic plasticity and reliable multilevel resistance states. Based on two transistor-free memristors, a novel differential pair was constructed. Hardware implementations of direct differential operation without subtraction circuits were achieved. This study provides a new pathway to develop a transistor-free memristor and achieve differential operation without subtraction circuits in neuromorphic computing, which will simplify the peripheral circuits, improve integration density, and reduce power consumption and latency.

A Solidly Mounted Resonator Fabricated by LiNbO3 Single-Crystalline Film on Flexible Polyimide Substrate.

A solidly mounted resonator on flexible polyimide (PI) substrate with high-effective coupling coefficient ( Kt2 ) of 14.06% is reported in this article. This high Kt2 is resulting from the LiNbO3 (LN) single-crystalline film and [SiO2/Mo]3 Bragg reflector. The quality of LN film fabricated by the crystal-ion-slicing (CIS) technique using benzocyclobutene (BCB) bonding layer was close to the bulk crystalline LN. The interfaces of the Al/LN/Al/[SiO2/Mo]3 Bragg reflector/BCB/PI multilayer are sharp, and the thickness of each layer is consistent with its design value. The resonant frequency and Kt2 keep stable when it is bent at different radii. These results demonstrate a feasible approach to realizing RF filters on flexible polymer substrates, which is an indispensable device for building integrated and multifunctional wireless flexible electronic systems.

Record-Low Subthreshold-Swing Negative-Capacitance 2D Field-Effect Transistors.

Power consumption is one of the most challenging bottlenecks for complementary metal-oxide-semiconductor integration. Negative-capacitance field-effect transistors (NC-FETs) offer a promising platform to break the thermionic limit defined by the Boltzmann tyranny and architect energy-efficient devices. However, it is a great challenge to achieving ultralow-subthreshold-swing (SS) (10 mV dec-1 ) and small-hysteresis NC-FETs simultaneously at room temperature, which has only been reported using the hafnium zirconium oxide system. Here, based on a ferroelectric LiNbO3 thin film with great spontaneous polarization, an ultralow-SS NC-FET with small hysteresis is designed. The LiNbO3 NC-FET platform exhibits a record-low SS of 4.97 mV dec-1 with great repeatability due to the superior capacitance matching characteristic as evidenced by the negative differential resistance phenomenon. By modulating the structure and operating parameters (such as channel length (Lch ), drain-sourse bias (Vds ), and gate bias (Vg )) of devices, an optimized SS from ≈40 to ≈10 mV dec-1 and hysteresis from ≈900 to ≈60 mV are achieved simultaneously. The results provide a new potential method for future highly integrated electronic and optical integrated energy-efficient devices.

Plasma-Induced Nonvolatile Resistive Switching with Extremely Low SET Voltage in TiOxFy with AgF Nanoparticles.

Low power consumption is crucial for the application of resistive random access memory. In this work, we present the bipolar resistive switching in an Ag/TiOxFy/Ti/Pt stack with extremely low switch-on voltage of 0.07 V. Operating current as low as 10 nA was also obtained by conductive atomic force microscopy. The highly defective TiOxFy layer was fabricated by plasma treatment using helium, oxygen, and carbon tetrafluoride orderly. During the electroforming process, AgF nanoparticles were formed due to the diffusion of Ag+ which reacted with the adsorbed F- in the TiOxFy layer. These nanoparticles are of great importance to resistive switching performance because they are believed to be conductive phases and become part of the conducting path when the sample is switched to a low-resistance state.