Tunable dual-band graphene-based infrared reflectance filter.

We experimentally demonstrated an actively tunable optical filter that controls the amplitude of reflected long-wave-infrared light in two separate spectral regions concurrently. Our device exploits the dependence of the excitation energy of plasmons in a continuous and unpatterned sheet of graphene on the Fermi-level, which can be controlled via conventional electrostatic gating. The filter enables simultaneous modification of two distinct spectral bands whose positions are dictated by the device geometry and graphene plasmon dispersion. Within these bands, the reflected amplitude can be varied by over 15% and resonance positions can be shifted by over 90 cm-1. Electromagnetic simulations verify that tuning arises through coupling of incident light to graphene plasmons by a grating structure. Importantly, the tunable range is determined by a combination of graphene properties, device structure, and the surrounding dielectrics, which dictate the plasmon dispersion. Thus, the underlying design shown here is applicable across a broad range of infrared frequencies.

Designing graphene absorption in a multispectral plasmon-enhanced infrared detector.

We have examined graphene absorption in a range of graphene-based infrared devices that combine either monolayer or bilayer graphene with three different gate dielectrics. Electromagnetic simulations show that the optical absorption in graphene in these devices, an important factor in a functional graphene-based detector, is strongly dielectric-dependent. These simulations reveal that plasmonic excitation in graphene can significantly influence the percentage of light absorbed in the entire device, as well as the graphene layer itself, with graphene absorption exceeding 25% in regions where plasmonic excitation occurs. Notably, the dielectric environment of graphene has a dramatic influence on the strength and wavelength range over which the plasmons can be excited, making dielectric choice paramount to final detector tunability and sensitivity.

Highly directional thermal emission from two-dimensional silicon structures.

We simulate, fabricate, and characterize near perfectly absorbing two-dimensional grating structures in the thermal infrared using heavily doped silicon (HdSi) that supports long wave infrared surface plasmon polaritons (LWIR SPP's). The devices were designed and optimized using both finite difference time domain (FDTD) and rigorous coupled wave analysis (RCWA) simulation techniques to satisfy stringent requirements for thermal management applications requiring high thermal radiation absorption over a narrow angular range and low visible radiation absorption over a broad angular range. After optimization and fabrication, characterization was performed using reflection spectroscopy and normal incidence emissivity measurements. Excellent agreement between simulation and experiment was obtained.

Realizing optical magnetism from dielectric metamaterials.

We demonstrate, for the first time, an all-dielectric metamaterial composite in the midinfrared based on micron-sized, high-index tellurium dielectric resonators. Dielectric resonators are desirable compared to conventional metallodielectric metamaterials at optical frequencies as they are largely angular invariant, free of Ohmic loss, and easily integrated into three-dimensional volumes. Measurements and simulation provide evidence of optical magnetism, which could be used for infrared magnetic mirrors, hard or soft surfaces, and subwavelength cavities.

Dynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors.

Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. Here we employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to show that wavelength tunability is possible by dynamically changing the gate voltage. We reveal the phenomena that govern the behavior of this type of device and show significant departure from the simple expectations based on vertical transitions. We find strong focusing of the electromagnetic fields at the contact edges over the same length scale as the band-bending. Both of these spatially-varying potentials lead to an enhancement of non-vertical optical transitions, which dominate even in the absence of phonon or impurity scattering. We also show that the vanishing density of states near the Dirac point leads to contact blocking and a gate-dependent modulation of the photocurrent. Several of the effects discussed here should be applicable to a broad range of one- and two-dimensional materials and devices.

Infrared rectification in a nanoantenna-coupled metal-oxide-semiconductor tunnel diode.

Direct rectification of electromagnetic radiation is a well-established method for wireless power conversion in the microwave region of the spectrum, for which conversion efficiencies in excess of 84% have been demonstrated. Scaling to the infrared or optical part of the spectrum requires ultrafast rectification that can only be obtained by direct tunnelling. Many research groups have looked to plasmonics to overcome antenna-scaling limits and to increase the confinement. Recently, surface plasmons on heavily doped Si surfaces were investigated as a way of extending surface-mode confinement to the thermal infrared region. Here we combine a nanostructured metallic surface with a heavily doped Si infrared-reflective ground plane designed to confine infrared radiation in an active electronic direct-conversion device. The interplay of strong infrared photon-phonon coupling and electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast electronic tunnelling in metal-oxide-semiconductor (MOS) structures. Infrared dispersion of SiO2 near a longitudinal optical (LO) phonon mode gives large transverse-field confinement in a nanometre-scale oxide-tunnel gap as the wavelength-dependent permittivity changes from 1 to 0, which leads to enhanced electromagnetic fields at material interfaces and a rectified displacement current that provides a direct conversion of infrared radiation into electric current. The spectral and electrical signatures of the nanoantenna-coupled tunnel diodes are examined under broadband blackbody and quantum-cascade laser (QCL) illumination. In the region near the LO phonon resonance, we obtained a measured photoresponsivity of 2.7 mA W(-1) cm(-2) at -0.1 V.

Mechanochemical synthesis of an organometallic compound: a high volume manufacturing method.

Chemical vapor deposition (CVD) precursor chemicals are held to some of the highest purity levels in industry. Many metal reagents form stable, unbreakable adducts with the coordinating solvents that are necessary for solvating highly polar reagents. These adducts are undesirable and must be removed prior to usage. Herein we describe a mechanochemical approach to the synthesis of bis(n-propyltetramethylcyclopentadienyl)strontium that eliminates the use of strongly coordinating solvents. This method overcomes the solubility problems of the two reagents without the formation of stable, unbreakable adducts. We utilize a unique reactor geometry that facilitates mechanochemical syntheses while simplifying handling and allowing for "one pot" production. The synthesis was scaled to five hundred gram lot sizes in a six liter reactor. This technique is applicable to many syntheses and is linearly scalable - limited only by reactor size.

ZnO nanostructures as efficient antireflection layers in solar cells.

An efficient antireflection coating (ARC) can enhance solar cell performance through increased light coupling. Here, we investigate solution-grown ZnO nanostructures as ARCs for Si solar cells and compare them to conventional single layer ARCs. We find that nanoscale morphology, controlled through synthetic chemistry, has a great effect on the macroscopic ARC performance. Compared with a silicon nitride (SiN) single layer ARC, ZnO nanorod arrays display a broadband reflection suppression from 400 to 1200 nm. For a tapered nanorod array with average tip diameter of 10 nm, we achieve a weighted global reflectance of 6.6%, which is superior to an optimized SiN single layer ARC. Calculations using rigorous coupled wave analysis suggest that the tapered nanorod arrays behave like modified single layer ARCs, where the tapering leads to impedance matching between Si and air through a gradual reduction of the effective refractive index away from the surface, resulting in low reflection particularly at longer wavelengths and eliminating interference fringes through roughening of the air-ZnO interface. According to the calculations, we may further improve ARC performance by tailoring the thickness of the bottom fused ZnO layer and through better control of tip tapering.