Ferromagnetic Interlayer Coupling in CrSBr Crystals Irradiated by Ions.

Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly, the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic ions. Already at moderate fluences, ion irradiation induces a remanent magnetization with hysteresis adapting to the easy-axis anisotropy of the pristine magnetic order up to a critical temperature of 110 K. Structure analysis of the irradiated crystals in conjunction with density functional theory calculations suggests that the displacement of constituent atoms due to collisions with ions and the formation of interstitials favors ferromagnetic order between the layers.

On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands.

Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wavelength infrared region caused by the creation of an impurity band within the silicon band gap. In this work, we present the first experimental demonstration of lateral Te-hyperdoped Si PIN photodetectors operating at room temperature in the optical telecom bands. We provide a detailed description of the fabrication process, working principle, and performance of the photodiodes, including their key figure of merits. Our results are promising for the integration of active and passive photonic elements on a single Si chip, leveraging the advantages of planar CMOS technology.

Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing.

Among other new device concepts, nickel silicide (NiSix)-based Schottky barrier nanowire transistors are projected to supplement down-scaling of the complementary metal-oxide semiconductor (CMOS) technology as its physical limits are reached. Control over the NiSix phase and its intrusions into the nanowire is essential for superior performance and down-scaling of these devices. Several works have shown control over the phase, but control over the intrusion lengths has remained a challenge. To overcome this, we report a novel millisecond-range flash lamp annealing (FLA)-based silicidation process. Nanowires are fabricated on silicon-on-insulator substrates using a top-down approach. Subsequently, Ni silicidation experiments are carried out using FLA. It is demonstrated that this silicidation process gives unprecedented control over the silicide intrusions. Scanning electron microscopy and high-resolution transmission electron microscopy are performed for structural characterization of the silicide. FLA temperatures are estimated with the help of simulations.

Ultra-fast annealing manipulated spinodal nano-decomposition in Mn-implanted Ge.

In the present work, millisecond-range flash lamp annealing is used to recrystallize Mn-implanted Ge. Through systematic investigations of structural and magnetic properties, we find that the flash lamp annealing produces a phase mixture consisting of spinodally decomposed Mn-rich ferromagnetic clusters within a paramagnetic-like matrix with randomly distributed Mn atoms. Increasing the annealing energy density from 46, via 50, to 56 J cm-2 causes the segregation of Mn atoms into clusters, as proven by transmission electron microscopy analysis and quantitatively confirmed by magnetization measurements. According to x-ray absorption spectroscopy, the dilute Mn ions within Ge are in d 5 electronic configuration. This Mn-doped Ge shows paramagnetism, as evidenced by the unsaturated magnetic-field-dependent x-ray magnetic circular dichroism signal. Our study reveals how spinodal decomposition occurs and influences the formation of ferromagnetic Mn-rich Ge-Mn nanoclusters.

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures.

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes.

Probing the Band Splitting near the Γ Point in the van der Waals Magnetic Semiconductor CrSBr.

This study investigates the electronic band structure of chromium sulfur bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis on the PL data robustly unveils energy splittings, band gaps, and excitonic transitions across different thicknesses of CrSBr, from monolayer to bulk. Temperature-dependent PL measurements elucidate the stability of the band splitting below the Néel temperature, suggesting that magnons coupled with excitons are responsible for the symmetry breaking and brightening of the transitions from the secondary conduction band minimum (CBM2) to the global valence band maximum (VBM1). Collectively, these results not only reveal splitting in both the conduction and valence bands but also highlight a significant advance in our understanding of the interplay between the optical, electronic, and magnetic properties of antiferromagnetic two-dimensional van der Waals crystals.

Strong Exciton-Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr.

The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling among its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrations through exciton-phonon coupling. Using low-temperature photoluminescence spectroscopy, we demonstrate the effective coupling between excitons and phonons in nanometer-thick CrSBr. By careful analysis, we identify that the satellite peaks predominantly arise from the interaction between the exciton and an optical phonon with a frequency of 118 cm-1 (∼14.6 meV) due to the out-of-plane vibration of Br atoms. Power-dependent and temperature-dependent photoluminescence measurements support exciton-phonon coupling and indicate a coupling between magnetic and optical properties, suggesting the possibility of carrier localization in the material. The presence of strong coupling between the exciton and the lattice may have important implications for the design of light-matter interactions in magnetic semiconductors and provide insights into the exciton dynamics in CrSBr. This highlights the potential for exploiting exciton-phonon coupling to control the optical properties of layered antiferromagnetic materials.

Formation of a vertical SnSe/SnSe2 p-n heterojunction by NH3 plasma-induced phase transformation.

Layered van der Waals crystals exhibit unique properties making them attractive for applications in nanoelectronics, optoelectronics, and sensing. The integration of two-dimensional materials with complementary metal-oxide-semiconductor (CMOS) technology requires controllable n- and p-type doping. In this work, we demonstrate the fabrication of vertical p-n heterojunctions made of p-type tin monoselenide (SnSe) and n-type tin diselenide (SnSe2). The p-n heterojunction is created in a single flake by the NH3-plasma-assisted phase transformation from SnSe2 to SnSe. We show that the transformation rate and crystal quality strongly depend on plasma parameters like plasma power, temperature, partial pressure, NH3 flow, and duration of plasma treatment. With optimal plasma parameters, the full transformation of SnSe2 flakes into SnSe is achieved within a few seconds. The crystal quality and the topography of the fabricated SnSe-SnSe2 heterostructures are investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy. The formation of a p-n junction is verified by current-voltage measurements.

Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization.

This work demonstrates the novel concept of a mixed-dimensional reconfigurable field effect transistor (RFET) by combining a one-dimensional (1D) channel material such as a silicon (Si) nanowire with a two-dimensional (2D) material as a gate dielectric. An RFET is an innovative device that can be dynamically programmed to perform as either an n- or p-FET by applying appropriate gate potentials. In this work, an insulating 2D material, hexagonal boron nitride (hBN), is introduced as a gate dielectric and encapsulation layer around the nanowire in place of a thermally grown or atomic-layer-deposited oxide. hBN flake was mechanically exfoliated and transferred onto a silicon nanowire-based RFET device using the dry viscoelastic stamping transfer technique. The thickness of the hBN flakes was investigated by atomic force microscopy and transmission electron microscopy. The ambipolar transfer characteristics of the Si-hBN RFETs with different gating architectures showed a significant improvement in the device's electrical parameters due to the encapsulation and passivation of the nanowire with the hBN flake. Both n- and p-type characteristics measured through the top gate exhibited a reduction of hysteresis by 10-20 V and an increase in the on-off ratio (ION/IOFF) by 1 order of magnitude (up to 108) compared to the values measured for unpassivated nanowire. Specifically, the hBN encapsulation provided improved electrostatic top gate coupling, which is reflected in the enhanced subthreshold swing values of the devices. For a single nanowire, an improvement up to 0.97 and 0.5 V/dec in the n- and p-conduction, respectively, is observed. Due to their dynamic switching and polarity control, RFETs boast great potential in reducing the device count, lowering power consumption, and playing a crucial role in advanced electronic circuitry. The concept of mixed-dimensional RFET could further strengthen its functionality, opening up new pathways for future electronics.

B20 Weyl Semimetal CoSi Film Fabricated by Flash-Lamp Annealing.

B20-CoSi is a newly discovered Weyl semimetal that crystallizes into a noncentrosymmetric crystal structure. However, the investigation of B20-CoSi has so far been focused on bulk materials, whereas the growth of thin films on technology-relevant substrates is a prerequisite for most practical applications. In this study, we have used millisecond-range flash-lamp annealing, a nonequilibrium solid-state reaction, to grow B20-CoSi thin films. By optimizing the annealing parameters, we were able to obtain thin films with a pure B20-CoSi phase. The magnetic and transport measurements indicate the appearance of the charge density wave and chiral anomaly. Our work presents a promising method for preparing thin films of most binary B20 transition-metal silicides, which are candidates for topological Weyl semimetals.

Millisecond flash lamp curing for porosity generation in thin films.

Flash lamp annealing (FLA) with millisecond pulse durations is reported as a novel curing method for pore precursor's degradation in thin films. A case study on the curing of dielectric thin films is presented. FLA-cured films are being investigated by means of positron annihilation spectroscopy (PAS) and Fourier-transform infrared (FTIR) spectroscopy in order to quantify the nm-scale porosity and post-treatment chemistry, respectively. Results from positron annihilation reveal the onset of the formation of porous voids inside the samples at 6 ms flash treatment time. Moreover, parameter's adjustment (flash duration and energy density) allows for identifying the optimum conditions of effective curing. Within such a systematic investigation, positron results indicate that FLA is able to decompose the porogen (pore precursors) and to generate interconnected (open porosity) or isolated pore networks with self-sealed pores in a controllable way. Furthermore, FTIR results demonstrate the structural evolution after FLA, that help for setting the optimal annealing conditions whereby only a residual amount of porogen remains and at the same time a well-densified matrix, and a hydrophobic porous structures are created. Raman spectroscopy suggests that the curing-induced self-sealing layer developed at the film surface is a graphene oxide-like layer, which could serve as the outside sealing of the pore network from intrusions.

Enhanced Luminescence of Yb3+ Ions Implanted to ZnO through the Selection of Optimal Implantation and Annealing Conditions.

Rare earth-doped zinc oxide (ZnO:RE) systems are attractive for future optoelectronic devices such as phosphors, displays, and LEDs with emission in the visible spectral range, working even in a radiation-intense environment. The technology of these systems is currently under development, opening up new fields of application due to the low-cost production. Ion implantation is a very promising technique to incorporate rare-earth dopants into ZnO. However, the ballistic nature of this process makes the use of annealing essential. The selection of implantation parameters, as well as post-implantation annealing, turns out to be non-trivial because they determine the luminous efficiency of the ZnO:RE system. This paper presents a comprehensive study of the optimal implantation and annealing conditions, ensuring the most efficient luminescence of RE3+ ions in the ZnO matrix. Deep and shallow implantations, implantations performed at high and room temperature with various fluencies, as well as a range of post-RT implantation annealing processes are tested: rapid thermal annealing (minute duration) under different temperatures, times, and atmospheres (O2, N2, and Ar), flash lamp annealing (millisecond duration) and pulse plasma annealing (microsecond duration). It is shown that the highest luminescence efficiency of RE3+ is obtained for the shallow implantation at RT with the optimal fluence of 1.0 × 1015 RE ions/cm2 followed by a 10 min annealing in oxygen at 800 °C, and the light emission from such a ZnO:RE system is so bright that can be observed with the naked eye.

Temperature stable 1.3 µm emission from GaAs.

Gallium arsenide has outstanding performance in optical communication devices for light source purposes. Different approaches have been done to realize the luminescence from GaAs matching the transmission window of optical fibers. Here we present the realization of quasi- temperature independent photoluminescence at around 1.3 µm from millisecond-range thermally treated GaAs. It is shown that the V(As) donor and X acceptor pairs are responsible for the 1.3 µm emission. The influence of the flash-lamp-annealing on the donor-acceptor pair (DAP) formation in the nitrogen and manganese doped and un-doped semi-insulating GaAs wafers were investigated. The concentration of DAP and the 1.3 µm emission can be easily tuned by controlling doping and annealing conditions.

InP nanocrystals on silicon for optoelectronic applications.

One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical properties, which is its main drawback. Therefore, a different material has to be used for the on-chip optical interconnections, e.g. a direct band gap III-V compound semiconductor material. In the paper we present the synthesis of single crystalline InP nanodots (NDs) on silicon using combined ion implantation and millisecond flash lamp annealing techniques. The optical and microstructural investigations reveal the growth of high-quality (100)-oriented InP nanocrystals. The current-voltage measurements confirm the formation of an n-p heterojunction between the InP NDs and silicon. The main advantage of our method is its integration with large-scale silicon technology, which allows applying it for Si-based optoelectronic devices.

n-InAs nanopyramids fully integrated into silicon.

InAs with an extremely high electron mobility (up to 40,000 cm(2)/V s) seems to be the most suitable candidate for better electronic devices performance. Here we present a synthesis of inverted crystalline InAs nanopyramids (NPs) in silicon using a combined hot ion implantation and millisecond flash lamp annealing techniques. Conventional selective etching was used to form the InAs/Si heterojunction. The current-voltage measurement confirms the heterojunction diode formation with the ideality factor of η = 4.6. Kelvin probe force microscopy measurements indicate a type-II band alignment of n-type InAs NPs on p-type silicon. The main advantage of our method is its integration with large-scale silicon technology, which also allows applying it for Si-based electronic devices.

Atomically Thin Delta-Doping of Self-Assembled Molecular Monolayers by Flash Lamp Annealing for Si-Based Deep UV Photodiodes.

Delta doping (δ-doping) can find a wide range of applications in advanced metal oxide semiconductor field effect transistors, deep UV photodetectors, quantum devices, and others. In this work, we formed a δ-doping layer in silicon by employing flash lamp annealing to treat the PCl3 monolayers grafted on silicon surfaces. The δ-doping layer is atomically thin (<1 nm). Low-temperature Hall measurements show that the δ-doping layer is in a metallic state and exhibits a weak localization phenomenon, implying that a two-dimensional electron gas is formed. When we form such an n-type δ-doping layer on a highly doped p-type Si substrate, a highly sensitive solar-blind UV photodetector is created, which traditionally was only possible by using wide band gap semiconductors such as gallium nitride (GaN) or silicon carbide (SiC).

On Curie temperature of B20-MnSi films.

B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechanism leads to the increase of the Curie temperature. In this work, we grow MnSi films on Si(100) and Si(111) substrates with a broad variation in their structures. By controlling the Mn thickness and annealing parameters, the pure MnSi phase of polycrystalline and textured nature as well as the mixed phase of MnSi and MnSi1.7 are obtained. Surprisingly, all these MnSi films show an increased Curie temperature of up to around 43 K. The Curie temperature is likely independent of the structural parameters within our accessibility including the film thickness above a threshold, strain, cell volume and the mixture with MnSi1.7. However, a pronounced phonon softening is observed for all samples, which can tentatively be attributed to slight Mn excess from stoichiometry, leading to the increased Curie temperature.

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon.

Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior to traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the on-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems.

Self-Driven Broadband Photodetectors Based on MoSe2/FePS3 van der Waals n-p Type-II Heterostructures.

Two-dimensional (2D) van der Waals materials with broadband optical absorption are promising candidates for next-generation UV-vis-NIR photodetectors. FePS3, one of the emerging antiferromagnetic van der Waals materials with a wide bandgap and p-type conductivity, has been reported as an excellent candidate for UV optoelectronics. However, a high sensitivity photodetector with a self-driven mode based on FePS3 has not yet been realized. Here, we report a high-performance and self-powered photodetector based on a multilayer MoSe2/FePS3 type-II n-p heterojunction with a working range from 350 to 900 nm. The presented photodetector operates at zero bias and at room temperature under ambient conditions. It exhibits a maximum responsivity (Rmax) of 52 mA W-1 and an external quantum efficiency (EQEmax) of 12% at 522 nm, which are better than the characteristics of its individual constituents and many other photodetectors made of 2D heterostructures. The high performance of MoSe2/FePS3 is attributed to the built-in electric field in the MoSe2/FePS3 n-p junction. Our approach provides a promising platform for broadband self-driven photodetector applications.

Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence.

The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive ion etching. The configuration allows two equivalent measurement sets to check the homogeneity of GeNWs in terms of resistivity and the Hall coefficient. The highest Hall mobility and carrier concentration of GeNWs at 5 K were in the order of 100 cm2/(Vs) and 4×1019cm-3, respectively. With a decreasing nanowire width, the resistivity increases and the carrier concentration decreases, which is attributed to carrier scattering in the region near the surface. By comparing the measured data with simulations, one can conclude the existence of a depletion region, which decreases the effective cross-section of GeNWs. Moreover, the resistivity of thin GeNWs is strongly influenced by the cross-sectional shape.