NH4OH-Oriented and pH-Dependent Growth of ZnO Nanostructures via Microwave-Assisted Growth Method.

We proffer NH4OH-oriented and pH-dependent growth of ZnO nanostructures via a microwaveassisted growth method. The fabrication of ZnO nanorods (ZNRs), nanoflowers (ZNFs), nanostars (ZNSs), and nanotetrapods (ZNTs) is presented. NH4OH was used as a mineralizer to change the solution pH for nanostructure growth, where temperature and other variables were fixed. Because of an efficient heat transfer and facile growth of nanostructures, a domestic microwave oven was used to facilitate the nanostructure growth in the span of just 10-15 min. The results showed that the growth of ZnO nanostructures was dependent upon the number of growth units and ZnO nuclei present in the solution, which ultimately depend upon the pH of the solution. At the outset, without the addition of NH4OH, the pH of the solution was ~6.8 and the ZNRs were formed in the solution or on a seeded substrate which persisted in the pH range of ~6.8-9. An abrupt change in the shapes and the types of the nanostructures was observed when the pH was boosted beyond 10. A transition from ZNRs to ZNFs was observed at pH 10 and ZNFs were formed at pH 11. The solution gave birth to ZNSs and ZNTs when the pH was further raised to 12 and 13, respectively.

High-Speed Growth of ZnO Nanorods in Preheating Condition Using Microwave-Assisted Growth Method.

In this study, we present the microwave-assisted growth (MAG) of ZnO nanorods (ZNRs) using a preheating hydrothermal method under tailored preheating and postheating growth conditions. The perimeters such as solution concentration, preheating time, and postheating time, were changed to optimize ZNR growth and the growth was carried out in a domestic 850 watt microwave oven. Preheated solution was utilized as an accelerator to increase the aspect ratio of the ZNRs and reduce the fabrication time. Because of a long fabrication time and limited length in the conventional MAG method, preheating condition was used for efficient growth of nanorods through homogeneous nucleation in the solution and then heterogeneous nucleation of the formed ZNRs on seeded substrate during postheating process. The nanostructures were characterized with scanning electron microscopy to look at the morphology and dimensions. Dimensions of ZNRs kept on increasing as the molar concentration went higher. Preheating time highly affected the morphology, dimensions, and aspect ratio of ZNRs and postheating time not only ensured the stability of ZNRs with substrate due to heterogeneous nucleation process but also influenced the morphology of ZNRs.

Least Squares Neural Network-Based Wireless E-Nose System Using an SnO2 Sensor Array.

Over the last few decades, the development of the electronic nose (E-nose) for detection and quantification of dangerous and odorless gases, such as methane (CH4) and carbon monoxide (CO), using an array of SnO2 gas sensors has attracted considerable attention. This paper addresses sensor cross sensitivity by developing a classifier and estimator using an artificial neural network (ANN) and least squares regression (LSR), respectively. Initially, the ANN was implemented using a feedforward pattern recognition algorithm to learn the collective behavior of an array as the signature of a particular gas. In the second phase, the classified gas was quantified by minimizing the mean square error using LSR. The combined approach produced 98.7% recognition probability, with 95.5 and 94.4% estimated gas concentration accuracies for CH4 and CO, respectively. The classifier and estimator parameters were deployed in a remote microcontroller for the actualization of a wireless E-nose system.

Phase controlled synthesis of bifunctional TiO2 nanocrystallites viad-mannitol for dye-sensitized solar cells and heterogeneous catalysis.

The crystal architecture of TiO2 was successfully tailored via a low-temperature (≤200 °C) hydrothermal process in the presence of d-mannitol for feasible applications in dye-sensitized solar cells (DSSCs) and heterogeneous catalysis. In the development of anatase-TiO2 (A-TiO2), d-mannitol does not merely acts as a complexing agent to manage the zigzag chains of octahedral TiO6 2- with dominant edge sharing but also performs as a capping agent by influencing the hydrolysis process during nucleation, as confirmed by Fourier-transform infrared spectroscopy and dynamic light scattering studies. After physical measurements, the as-synthesized nanocrystallites (NCs) of A-TiO2 were used in DSSCs, where a fascinating power conversion efficiency (PCE) of 6.0% was obtained, which showed excellent performance compared with commercial anatase-TiO2 (CA-TiO2: 5.7%) and rutile-TiO2 (R-TiO2) obtained without d-mannitol (3.7%). Moreover, a smart approach was developed via the A-TiO2 catalyst to synthesize pharmaceutically important C-3 alkylated 4-hydroxycoumarins through different activated secondary alcohols under solvent-free, and heat/visible light conditions. In addition, the catalytic activity of the so-produced A-TiO2 catalyst under solvent-free conditions exhibited remarkable recyclability with up to five consecutive runs with negligible reduction, which is superior to existing reports, and clearly reveals the novelty, and green, sustainable nature of the as-synthesized A-TiO2 catalyst. A plausible reaction mechanism of both coupling partners was activated through the interaction with the A-TiO2 catalyst to produce valuable C-3 alkylated 4-hydroxycoumarins with 95% yield and high selectivity.

Memristive Devices from CuO Nanoparticles.

Memristive systems can provide a novel strategy to conquer the von Neumann bottleneck by evaluating information where data are located in situ. To meet the rising of artificial neural network (ANN) demand, the implementation of memristor arrays capable of performing matrix multiplication requires highly reproducible devices with low variability and high reliability. Hence, we present an Ag/CuO/SiO2/p-Si heterostructure device that exhibits both resistive switching (RS) and negative differential resistance (NDR). The memristor device was fabricated on p-Si and Indium Tin Oxide (ITO) substrates via cost-effective ultra-spray pyrolysis (USP) method. The quality of CuO nanoparticles was recognized by studying Raman spectroscopy. The topology information was obtained by scanning electron microscopy. The resistive switching and negative differential resistance were measured from current-voltage characteristics. The results were then compared with the Ag/CuO/ITO device to understand the role of native oxide. The interface barrier and traps associated with the defects in the native silicon oxide limited the current in the negative cycle. The barrier confined the filament rupture and reduced the reset variability. Reset was primarily influenced by the filament rupture and detrapping in the native oxide that facilitated smooth reset and NDR in the device. The resistive switching originated from traps in the localized states of amorphous CuO. The set process was mainly dominated by the trap-controlled space-charge-limited; this led to a transition into a Poole-Frenkel conduction. This research opens up new possibilities to improve the switching parameters and promote the application of RS along with NDR.

Intrinsic Control in Defects Density for Improved ZnO Nanorod-Based UV Sensor Performance.

Hitherto, most research has primarily focused on improving the UV sensor efficiency via surface treatments and by stimulating the ZnO nanorod (ZNR) surface Schottky barriers. However, to the best of our knowledge, no study has yet probed the intrinsic crystal defect generation and its effects on UV sensor efficiency. In this study, we undertake this task by fabricating an intrinsic defect-prone hydrothermally grown ZNRs (S1), Ga-doped ZNRs (S2), and defect-free microwave-assisted grown ZNRs (S3). The defect states were recognized by studying X-ray diffraction and photoluminescence characteristics. The large number of crystal defects in S1 and S2 had two pronged disadvantages. (1) Most of the UV light was absorbed by the defect traps and the e-h pair generation was compromised. (2) Mobility was directly affected by the carrier-carrier scattering and phonon scattering processes. Hence, the overall UV sensor efficiency was compromised based on the defect-induced mobility-response model. Considering the facts, defect-free S3 exhibited the best UV sensor performance with the highest on/off ratio, the least impulse response time, the highest recombination time, and highest gain-induced responsivity to 368 nm UV light, which was desired of an efficient passive metal oxide-based UV sensor. Our results were compared with the recently published results.

Growth Condition-Oriented Defect Engineering for Changes in Au⁻ZnO Contact Behavior from Schottky to Ohmic and Vice Versa.

ZnO has the built-in characteristics of both ionic and covalent compound semiconductors, which makes the metal⁻ZnO carrier transport mechanism quite intricate. The growth mechanism-centric change in ZnO defect density and carrier concentration also makes the contact formation and behavior unpredictable. This study investigates the uncertainty in Au⁻ZnO contact behavior for application-oriented research and the development on ZnO nanostructures. Herein, we explain the phenomenon for how Au⁻ZnO contact could be rectifying or non-rectifying. Growth method-dependent defect engineering was exploited to explain the change in Schottky barrier heights at the Au⁻ZnO interface, and the change in device characteristics from Schottky to Ohmic and vice versa. The ZnO nanorods were fabricated via aqueous chemical growth (ACG) and microwave-assisted growth (MAG) methods. For further investigations, one ACG sample was doped with Ga, and another was subjected to oxygen plasma treatment (OPT). The ACG and Ga-doped ACG samples showed a quasi-Ohmic and Ohmic behavior, respectively, because of a high surface and subsurface level donor defect-centric Schottky barrier pinning at the Au⁻ZnO interface. However, the ACG-OPT and MAG samples showed a more pronounced Schottky contact because of the presence of low defect-centric carrier concentration via MAG, and the removal of the surface accumulation layer via the OPT process.

Recent Advances in Metal Chalcogenides (MX; X = S, Se) Nanostructures for Electrochemical Supercapacitor Applications: A Brief Review.

Supercapacitors (SCs) have received a great deal of attention and play an important role for future self-powered devices, mainly owing to their higher power density. Among all types of electrical energy storage devices, electrochemical supercapacitors are considered to be the most promising because of their superior performance characteristics, including short charging time, high power density, safety, easy fabrication procedures, and long operational life. An SC consists of two foremost components, namely electrode materials, and electrolyte. The selection of appropriate electrode materials with rational nanostructured designs has resulted in improved electrochemical properties for high performance and has reduced the cost of SCs. In this review, we mainly spotlight the non-metallic oxide, especially metal chalcogenides (MX; X = S, Se) based nanostructured electrode materials for electrochemical SCs. Different non-metallic oxide materials are highlighted in various categories, such as transition metal sulfides and selenides materials. Finally, the designing strategy and future improvements on metal chalcogenide materials for the application of electrochemical SCs are also discussed.

NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics.

Previous studies on Ga-doped ZnO nanorods (GZRs) have failed to address the change in GZR morphology with increased doping concentration. The morphology-change affects the GZR surface-to-volume ratio and the real essence of doping is not exploited for heterostructure optoelectronic characteristics. We present NH4OH treatment to provide an optimum morphological trade-off to n-GZR/p-Si heterostructure characteristics. The GZRs were grown via one of the most eminent and facile hydrothermal method with an increase in Ga concentration from 1% to 5%. The supplementary OH- ion concentration was effectively controlled by the addition of an optimum amount of NH4OH to synchronize GZR aspect and surface-to-volume ratio. Hence, the probed results show only the effects of Ga-doping, rather than the changed morphology, on the optoelectronic characteristics of n-GZR/p-Si heterostructures. The doped nanostructures were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, photoluminescence, Hall-effect measurement, and Keithley 2410 measurement systems. GZRs had identical morphology and dimensions with a typical wurtzite phase. As the GZR carrier concentration increased, the PL response showed a blue shift because of Burstein-Moss effect. Also, the heterostructure current levels increased linearly with doping concentration. We believe that the presented GZRs with optimized morphology have great potential for field-effect transistors, light-emitting diodes, ultraviolet sensors, and laser diodes.

Growth Method-Dependent and Defect Density-Oriented Structural, Optical, Conductive, and Physical Properties of Solution-Grown ZnO Nanostructures.

It is time for industry to pay a serious heed to the application and quality-dependent research on the most important solution growth methods for ZnO, namely, aqueous chemical growth (ACG) and microwave-assisted growth (MAG) methods. This study proffers a critical analysis on how the defect density and formation behavior of ZnO nanostructures (ZNSs) are growth method-dependent. Both antithetical and facile methods are exploited to control the ZnO defect density and the growth mechanism. In this context, the growth of ZnO nanorods (ZNRs), nanoflowers, and nanotubes (ZNTs) are considered. The aforementioned growth methods directly stimulate the nanostructure crystal growth and, depending upon the defect density, ZNSs show different trends in structural, optical, etching, and conductive properties. The defect density of MAG ZNRs is the least because of an ample amount of thermal energy catered by high-power microwaves to the atoms to grow on appropriate crystallographic planes, which is not the case in faulty convective ACG ZNSs. Defect-centric etching of ZNRs into ZNTs is also probed and methodological constraints are proposed. ZNS optical properties are different in the visible region, which are quite peculiar, but outstanding for ZNRs. Hall effect measurements illustrate incongruent conductive trends in both samples.

Microwave-assisted Facile and Ultrafast Growth of ZnO Nanostructures and Proposition of Alternative Microwave-assisted Methods to Address Growth Stoppage.

The time constraint in the growth of ZnO nanostructures when using a hydrothermal method is of paramount importance in contemporary research, where a long fabrication time rots the very essence of the research on ZnO nanostructures. In this study, we present the facile and ultrafast growth of ZnO nanostructures in a domestic microwave oven within a pressurized environment in just a few minutes. This method is preferred for the conventional solution-based method because of the ultrafast supersaturation of zinc salts and the fabrication of high-quality nanostructures. The study of the effect of seed layer density, growth time, and the solution's molar concentration on the morphology, alignment, density, and aspect ratio of ZnO nanorods (ZNRs) is explored. It is found in a microwave-assisted direct growth method that ~5 mins is the optimum time beyond which homogeneous nucleation supersedes heterogeneous nucleation, which results in the growth stoppage of ZNRs. To deal with this issue, we propound different methods such as microwave-assisted solution-replacement, preheating, and PEI-based growth methods, where growth stoppage is addressed and ZNRs with a high aspect ratio can be grown. Furthermore, high-quality ZnO nanoflowers and ZnO nanowalls are fabricated via ammonium hydroxide treatment in a very short time.

DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.

Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from -4.2 V in a conventional single-gate HEMT to -2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.

Fabrication and Characterization of ZnO Nanorods on Multiple Substrates.

In this study, we present the fabrication and characterization of ZnO nanorods (NRs) grown on p-Si, gold (Au) and nickel (Ni) coated on Si wafer, indium tin oxide (ITO), and quartz substrates. The aqueous chemical growth method is used for the vertical growth of ZnO NRs on multiple substrates. The samples are characterized with scanning electron microscope and energy dispersive X-ray spectroscopy to probe into the growth, alignment, density, diameter, and length of ZnO NRs on multiple substrates. It is found that under same conditions, like growth temperature, growth time, and solution concentration, ZnO NRs on ITO and quartz have same length but comparatively larger diameter than on other samples. The effects of growth time on the diameter and length of ZnO NRs are also explored. All the samples are characterized with probe station to look at the current-voltage (I-V) behavior of ZnO NRs on multiple substrates. It is found that ZnO NRs on p-Si show a simple p-n heterojunction diode like behavior. ZnO NRs grown on Au- and Ni-coated Si wafers show Schottky I-V characteristic behaviors while ZnO NRs on ITO show a simple ohmic I-V response with comparatively higher level of current. Finally, the I-V response of ZnO NRs on p-Si is also studied under ultraviolet illumination. Because of the photo-generated carriers in ZnO, the sample shows higher level of current upon illumination.