Selective growth and ordering of SiGe nanowires for band gap engineering.

Selective growth and self-organization of silicon-germanium (SiGe) nanowires (NWs) on focused ion beam (FIB) patterned Si(111) substrates is reported. In its first step, the process involves the selective synthesis of Au catalysts in SiO2-free areas; its second step involves the preferential nucleation and growth of SiGe NWs on the catalysts. The selective synthesis process is based on a simple, room-temperature reduction of gold salts (Au³âºCl4⁻) in aqueous solution, which provides well-organized Au catalysts. By optimizing the reduction process, we are able to generate a bidimensional regular array of Au catalysts with self-limited sizes positioned in SiO2-free windows opened in a SiO2/Si(111) substrate by FIB patterning. Such Au catalysts subsequently serve as preferential nucleation and growth sites of well-organized NWs. Furthermore, these NWs with tunable position and size exhibit the relevant features and bright luminescence that would find several applications in optoelectronic nanodevices.

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111).

We report on the optical properties of SiGe nanowires (NWs) grown by molecular beam epitaxy (MBE) in ordered arrays on SiO2/Si(111) substrates. The production method employs Au catalysts with self-limited sizes deposited in SiO2-free sites opened-up in the substrate by focused ion beam patterning for the preferential nucleation and growth of these well-organized NWs. The NWs thus produced have a diameter of 200 nm, a length of 200 nm, and a Ge concentration x = 0.15. Their photoluminescence (PL) spectra were measured at low temperatures (from 6 to 25 K) with excitation at 405 and 458 nm. There are four major features in the energy range of interest (980-1120 meV) at energies of 1040.7, 1082.8, 1092.5, and 1098.5 meV, which are assigned to the NW-transverse optic (TO) Si-Si mode, NW-transverse acoustic (TA), Si-substrate-TO and NW-no-phonon (NP) lines, respectively. From these results the NW TA and TO phonon energies are found to be 15.7 and 57.8 meV, respectively, which agree very well with the values expected for bulk Si1- x Ge x with x = 0.15, while the measured NW NP energy of 1099 meV would indicate a bulk-like Ge concentration of x = 0.14. Both of these concentrations values, as determined from PL, are in agreement with the target value. The NWs are too large in diameter for a quantum confinement induced energy shift in the band gap. Nevertheless, NW PL is readily observed, indicating that efficient carrier recombination is occurring within the NWs.

Bilayer free-standing beam splitter for Fourier transform infrared spectrometry.

We describe the design, fabrication, testing, and performance of a two-layer free-standing beam splitter for use in far-infrared Fourier transform infrared spectrometers. This bilayer beam splitter, consisting of a low-index polymer layer in combination with a high-index semiconductor layer, has an efficiency that is higher than that of the best combination of four single-layer Mylar beam splitters currently in use for spectrometry from 50 to 550 cm(-1).

Fourier-transform radiation thermometry: measurements and uncertainties.

A Fourier-transform radiometer is used to measure blackbody temperatures in the 5001000-K range. The measurements involve collecting mid-infrared spectra at two known reference temperatures and one unknown temperature. The accuracy of the interpolation measurement technique is discussed, and the effects of the uncertainty in the temperature reference points, the voltage ratio measurement, and the wavelength accuracy are described. Temperature accuracy at the 0.5% level has been achieved; the main uncertainty component is caused by the interferometer drift. Directions to reach 100-mk accuracy levels have been identified.