Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon.

The detection of charge trap ionization induced by resonant excitation enables spectroscopy on single Er3+ ions in silicon nanotransistors. In this work, a time-resolved detection method is developed to investigate the resonant excitation and relaxation of a single Er3+ ion in silicon. The time-resolved detection is based on a long-lived current signal with a tunable reset and allows the measurement under stronger and shorter resonant excitation in comparison to time-averaged detection. Specifically, the short-pulse study gives an upper bound of 23.7 µs on the decay time of the 4I13/2 state of the Er3+ ion. The fast decay and the tunable reset allow faster repetition of the single-ion detection, which is attractive for implementing this method in large-scale quantum systems of single optical centers. The findings on the detection mechanism and dynamics also provide an important basis for applying this technique to detect other single optical centers in solids.

Optically addressable nuclear spins in a solid with a six-hour coherence time.

Space-like separation of entangled quantum states is a central concept in fundamental investigations of quantum mechanics and in quantum communication applications. Optical approaches are ubiquitous in the distribution of entanglement because entangled photons are easy to generate and transmit. However, extending this direct distribution beyond a range of a few hundred kilometres to a worldwide network is prohibited by losses associated with scattering, diffraction and absorption during transmission. A proposal to overcome this range limitation is the quantum repeater protocol, which involves the distribution of entangled pairs of optical modes among many quantum memories stationed along the transmission channel. To be effective, the memories must store the quantum information encoded on the optical modes for times that are long compared to the direct optical transmission time of the channel. Here we measure a decoherence rate of 8 × 10(-5) per second over 100 milliseconds, which is the time required for light transmission on a global scale. The measurements were performed on a ground-state hyperfine transition of europium ion dopants in yttrium orthosilicate ((151)Eu(3+):Y2SiO5) using optically detected nuclear magnetic resonance techniques. The observed decoherence rate is at least an order of magnitude lower than that of any other system suitable for an optical quantum memory. Furthermore, by employing dynamic decoupling, a coherence time of 370 ± 60 minutes was achieved at 2 kelvin. It has been almost universally assumed that light is the best long-distance carrier for quantum information. However, the coherence time observed here is long enough that nuclear spins travelling at 9 kilometres per hour in a crystal would have a lower decoherence with distance than light in an optical fibre. This enables some very early approaches to entanglement distribution to be revisited, in particular those in which the spins are transported rather than the light.

Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors.

Continued scaling of semiconductor devices has driven information technology into vastly diverse applications. The performance of ultrascaled transistors is strongly influenced by local electric field and strain. As the size of these devices approaches fundamental limits, it is imperative to develop characterization techniques with nanometer resolution and three-dimensional (3D) mapping capabilities for device optimization. Here, we report on the use of single erbium (Er) ions as atomic probes for the electric field and strain in a silicon ultrascaled transistor. Stark shifts on the Er3+ spectra induced by both the overall electric field and the local charge environment are observed. Changes in strain smaller than 3 × 10-6 are detected, which is around 2 orders of magnitude more sensitive than the standard techniques used in the semiconductor industry. These results open new possibilities for 3D mapping of the local strain and electric field in the channel of ultrascaled transistors.

Optical addressing of an individual erbium ion in silicon.

The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications under development. So far, it has been accomplished for only two defect centres in crystalline solids: phosphorus dopants in silicon, for which electrical read-out based on a single-electron transistor is used, and nitrogen-vacancy centres in diamond, for which optical read-out is used. A spin read-out fidelity of about 90 per cent has been demonstrated with both electrical read-out and optical read-out; however, the thermal limitations of the former and the poor photon collection efficiency of the latter make it difficult to achieve the higher fidelities required for quantum information applications. Here we demonstrate a hybrid approach in which optical excitation is used to change the charge state (conditional on its spin state) of an erbium defect centre in a silicon-based single-electron transistor, and this change is then detected electrically. The high spectral resolution of the optical frequency-addressing step overcomes the thermal broadening limitation of the previous electrical read-out scheme, and the charge-sensing step avoids the difficulties of efficient photon collection. This approach could lead to new architectures for quantum information processing devices and could drastically increase the range of defect centres that can be exploited. Furthermore, the efficient electrical detection of the optical excitation of single sites in silicon represents a significant step towards developing interconnects between optical-based quantum computing and silicon technologies.

Generation of Light with Multimode Time-Delayed Entanglement Using Storage in a Solid-State Spin-Wave Quantum Memory.

Here, we demonstrate generating and storing entanglement in a solid-state spin-wave quantum memory with on-demand readout using the process of rephased amplified spontaneous emission (RASE). Amplified spontaneous emission (ASE), resulting from an inverted ensemble of Pr^{3+} ions doped into a Y_{2}SiO_{5} crystal, generates entanglement between collective states of the praseodymium ensemble and the output light. The ensemble is then rephased using a four-level photon echo technique. Entanglement between the ASE and its echo is confirmed and the inseparability violation preserved when the RASE is stored as a spin wave for up to 5 µs. RASE is shown to be temporally multimode with almost perfect distinguishability between two temporal modes demonstrated. These results pave the way for the use of multimode solid-state quantum memories in scalable quantum networks.

Efficient quantum memory for light.

Storing and retrieving a quantum state of light on demand, without corrupting the information it carries, is an important challenge in the field of quantum information processing. Classical measurement and reconstruction strategies for storing light must necessarily destroy quantum information as a consequence of the Heisenberg uncertainty principle. There has been significant effort directed towards the development of devices-so-called quantum memories-capable of avoiding this penalty. So far, successful demonstrations of non-classical storage and on-demand recall have used atomic vapours and have been limited to low efficiencies, of less than 17 per cent, using weak quantum states with an average photon number of around one. Here we report a low-noise, highly efficient (up to 69 per cent) quantum memory for light that uses a solid-state medium. The device allows the storage and recall of light more faithfully than is possible using a classical memory, for weak coherent states at the single-photon level through to bright states of up to 500 photons. For input coherent states containing on average 30 photons or fewer, the performance exceeded the no-cloning limit. This guaranteed that more information about the inputs was retrieved from the memory than was left behind or destroyed, a feature that will provide security in communications applications.

Observation of Photon Echoes From Evanescently Coupled Rare-Earth Ions in a Planar Waveguide.

We report the measurement of the inhomogeneous linewidth, homogeneous linewidth, and spin-state lifetime of Pr3+ ions in a novel waveguide architecture. The TeO2 slab waveguide deposited on a bulk Pr3+∶Y2SiO5 crystal allows the 3H4↔1D2 transition of Pr3+ ions to be probed by the optical evanescent field that extends into the substrate. The 2-GHz inhomogeneous linewidth, the optical coherence time of 70±5 µs, and the spin-state lifetime of 9.8±0.3 s indicate that the properties of ions interacting with the waveguide mode are consistent with those of bulk ions. This result establishes the foundation for large, integrated, and high performance rare-earth-ion quantum systems based on a waveguide platform.

Photoionisation detection of a single Er3+ ion with sub-100-ns time resolution.

Efficient detection of single optical centres in solids is essential for quantum information processing, sensing and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionisation induced by a single Er3+ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the photoionisation detection. With this technique, the optically excited state lifetime of a single Er3+ ion in a Si nano-transistor is measured for the first time to be [Formula: see text]s. Our results demonstrate an efficient approach for detecting a charge state change induced by Er excitation and relaxation. This approach could be used for fast readout of other single optical centres in solids and is attractive for large-scale integrated optical quantum systems thanks to the multi-channel RF reflectometry demonstrated with frequency multiplexing techniques.

Demonstration of photon-echo rephasing of spontaneous emission.

In this paper we report the first demonstration of "rephased amplified spontaneous emission" (RASE) with photon-counting detection. This protocol provides an all-in-one photon-pair source and quantum-memory that has applications as a quantum repeater node. The RASE protocol is temporally multimode, and in this demonstration the photon echo was generated in a way that is spatially multimode and includes intermediate storage between two potentially long-lived spin states. A correlation between spontaneous emission and its photon echo was observed, using an ensemble of Pr(3+) ions doped into a Y2SiO5 crystal. Alterations that would allow for the measurement of nonclassical correlations are identified. These should generally apply for future experiments in rare-earth ion crystals, which are promising systems for implementing highly-multiplexed quantum repeater operations.

Photon echo without a free induction decay in a double-Λ system.

We have characterized a novel photon-echo pulse sequence for a double-Λ-type energy level system where the input and rephasing transitions are different from the applied π pulses. We show that, despite having imperfect π-pulses associated with large coherent emission due to free induction decay (FID), the noise added in the echo mode is only 0.2 ± 0.1 photons per shot, compared to 4 × 104 photons in the FID modes. Using this echo pulse sequence in the "rephased amplified spontaneous emission" (RASE) scheme [Phys. Rev. A 81, 012301 (2010)] will allow for generation of entangled photon pairs that are in different frequency, temporal, and potentially spatial modes to any bright driving fields. The coherence and efficiency properties of this sequence were characterized in a Pr(3+):Y2SiO5 crystal.

Diamond nanopillar arrays for quantum microscopy of neuronal signals.

Significance: Wide-field measurement of cellular membrane dynamics with high spatiotemporal resolution can facilitate analysis of the computing properties of neuronal circuits. Quantum microscopy using a nitrogen-vacancy (NV) center is a promising technique to achieve this goal. Aim: We propose a proof-of-principle approach to NV-based neuron functional imaging. Approach: This goal is achieved by engineering NV quantum sensors in diamond nanopillar arrays and switching their sensing mode to detect the changes in the electric fields instead of the magnetic fields, which has the potential to greatly improve signal detection. Apart from containing the NV quantum sensors, nanopillars also function as waveguides, delivering the excitation/emission light to improve sensitivity. The nanopillars also improve the amplitude of the neuron electric field sensed by the NV by removing screening charges. When the nanopillar array is used as a cell niche, it acts as a cell scaffolds which makes the pillars function as biomechanical cues that facilitate the growth and formation of neuronal circuits. Based on these growth patterns, numerical modeling of the nanoelectromagnetics between the nanopillar and the neuron was also performed. Results: The growth study showed that nanopillars with a 2 - µ m pitch and a 200-nm diameter show ideal growth patterns for nanopillar sensing. The modeling showed an electric field amplitude as high as ≈ 1.02 × 10 10 mV / m at an NV 100 nm from the membrane, a value almost 10 times the minimum field that the NV can detect. Conclusion: This proof-of-concept study demonstrated unprecedented NV sensing potential for the functional imaging of mammalian neuron signals.