Broadband Tunable Infrared Light Emission from Metal-Oxide-Semiconductor Tunnel Junctions in Silicon Photonics.

Broadband near-infrared light emitting tunnel junctions are demonstrated with efficient coupling to a silicon photonic waveguide. The metal oxide semiconductor devices show long hybrid photonic-plasmonic mode propagation lengths of approximately 10 µm and thus can be integrated into an overcoupled resonant cavity with quality factor Q ≈ 49, allowing for tens of picowatt near-infrared light emission coupled directly into a waveguide. The electron inelastic tunneling transition rate and the cavity mode density are modeled, and the transverse magnetic (TM) hybrid mode excitation rate is derived. The results coincide well with polarization resolved experiments. Additionally, current-stressed devices are shown to emit unpolarized light due to radiative recombination inside the silicon electrode.

Chiroptical Response of Aluminum Nanocrescents at Ultraviolet Wavelengths.

Manipulation of plasmon modes at ultraviolet wavelengths using engineered nanophotonic devices allows for the development of high-sensitivity chiroptical spectroscopy systems. We present here an experimental framework based on aluminum-based crescent-shaped nanostructures that exhibit a strong chiroptical response at ultraviolet wavelengths. Through utilization of higher-order plasmon modes in wavelength-scale nanostructures, we address the inherent fabrication challenges in scaling the response to higher frequencies. Additionally, the distinct far-field spectral response types are analyzed within a coupled-oscillator model framework. We find two competing chiroptical response types that contribute toward potential ambiguity in the interpretation of the circular dichroism spectra. The first, optical activity, originates from the interaction between hybridized eigenmodes, whereas the second manifests as a response superficially similar to optical activity but originating instead from differential near-field absorption modes. The study of the chiroptical response from nanoplasmonic devices presented here is expected to aid the development of next-generation chiroptical spectroscopy systems.

Revisiting the Photon-Drag Effect in Metal Films.

The photon-drag effect, the rectified current in a medium induced by conservation of momentum of absorbed or redirected light, is a unique probe of the detailed mechanisms underlying radiation pressure. We revisit this effect in gold, a canonical Drude metal. We discover that the signal for p-polarized illumination in ambient air is affected in both sign and magnitude by adsorbed molecules, opening previous measurements for reinterpretation. Further, we show that the intrinsic sign of the photon-drag effect is contrary to the prevailing intuitive model of direct momentum transfer to free electrons.

Very slow cooling dynamics of photoexcited carriers in graphene observed by optical-pump terahertz-probe spectroscopy.

Using optical-pump terahertz-probe spectroscopy, we study the relaxation dynamics of photoexcited carriers in graphene at different substrate temperatures. We find that at lower temperatures the tail of the relaxation transients measured by the differential probe transmission become slower, extending beyond several hundred picoseconds below 50 K. We interpret the observed relaxation transients as resulting from the cooling of the photoexcited carriers via phonon emission. The slow cooling of the photoexcited carriers at low temperatures is attributed to the bulk of the electron and hole energy distributions moving close enough to the Dirac point that both intraband and interband scattering of carriers via optical phonon emission become inefficient for removing heat from the carriers. Our model, which includes intraband carrier scattering and interband carrier recombination and generation, agrees very well with the experimental observations.

Measurements of the carrier dynamics and terahertz response of oriented germanium nanowires using optical-pump terahertz-probe spectroscopy.

We have measured the terahertz response of oriented Germanium nanowires using ultrafast optical-pump terahertz-probe spectroscopy. We present results on the time, frequency, and polarization dependence of the terahertz response. Our results indicate intraband energy relaxation times of photoexcited carriers in the 1.5-2.0 ps range, carrier density dependent interband electron-hole recombination times in the 75-125 ps range, and carrier momentum scattering rates in the 60-90 fs range. Additionally, the terahertz response of the nanowires is strongly polarization dependent despite the subwavelength dimensions of the nanowires. The differential terahertz transmission is found to be large when the field is polarized parallel to the nanowires and very small when the field is polarized perpendicular to the nanowires. This polarization dependence of the terahertz response can be explained in terms of the induced depolarization fields and the resulting magnitudes of the surface plasmon frequencies.

A frequency stabilization technique for diode lasers based on frequency-shifted beams from an acousto-optic modulator.

We present a simple method for diode laser frequency stabilization that makes use of a Doppler-broadened vapor cell absorption signals of two frequency-shifted laser beams. Using second-order-diffracted, double-passed beams from an acousto-optic modulator, we achieve a frequency separation roughly equal to the Doppler half width. The differential transmission signals of the two beams provide an error signal with a very large linear feature, allowing frequency stabilization over a range of greater than 1 GHz by means of standard proportional-integral-derivative servo feedback to the piezoelectric control of the grating in our external cavity diode laser. We have applied this technique to two different diode laser systems, one used to lock to the 410 nm E1 transition in indium and another for locking to the M1/E2 transition in thallium at 1283 nm. In both cases the technique reduces frequency fluctuation to roughly 1 MHz over time scales from 10(-3) to 10(2) s.

Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene.

The ultrafast relaxation and recombination dynamics of photogenerated electrons and holes in epitaxial graphene are studied using optical-pump terahertz-probe spectroscopy. The conductivity in graphene at terahertz frequencies depends on the carrier concentration as well as the carrier distribution in energy. Time-resolved studies of the conductivity can therefore be used to probe the dynamics associated with carrier intraband relaxation and interband recombination. We report the electron-hole recombination times in epitaxial graphene for the first time. Our results show that carrier cooling occurs on subpicosecond time scales and that interband recombination times are carrier density dependent.