RESUMO
Galvanic exchange seeds the growth of Pt nanostructures on the Ni foam monolith. Subsequent atomic layer deposition of ultrathin Al2O3 followed by annealing under air affords supported Pt catalysts with ultralow loading (0.020 ppm). In addition to the expected enhancement of the stability of the Pt particles on the surface, the â¼2 nm Al2O3 overcoat appears to also play a crucial role in the overall structural integrity of the NiOx nanoplates that grow on the Ni foam surface as a result of the preparative route. The resulting material is physically robust toward repeated handling and showcases retention of catalytic activity over 10 standard catalyst recycling trials, standing in marked contrast to the uncoated samples. Catalyst activity was tested via the hydrogenation of various functionalized styrenes at low temperatures and low hydrogen pressure in ethanol as a solvent, with a TOF as high as 9.5 × 106 h-1 for unfunctionalized styrene. Notably, the catalysts show excellent tolerance toward F, Cl, and Br substituents and no hydrogenation of the aromatic ring.
RESUMO
Negative longitudinal magnetoresistances (NLMRs) have been recently observed in a variety of topological materials and often considered to be associated with Weyl fermions that have a defined chirality. Here we report NLMRs in non-Weyl GaAs quantum wells. In the absence of a magnetic field the quantum wells show a transition from semiconducting-like to metallic behaviour with decreasing temperature. We observe pronounced NLMRs up to 9 Tesla at temperatures above the transition and weak NLMRs in low magnetic fields at temperatures close to the transition and below 5 K. The observed NLMRs show various types of magnetic field behaviour resembling those reported in topological materials. We attribute them to microscopic disorder and use a phenomenological three-resistor model to account for their various features. Our results showcase a contribution of microscopic disorder in the occurrence of unusual phenomena. They may stimulate further work on tuning electronic properties via disorder/defect nano-engineering.