SnSe2 Quantum Dots and Chlorhexidine Acetate Suppress Synergistically Non-radiative Recombination Loss for High Efficiency and Stability Perovskite Solar Cells.

Non-radiative recombination losses limit the property of perovskite solar cells (PSCs). Here, a synergistic strategy of SnSe2QDs doping into SnO2 and chlorhexidine acetate (CA) coating on the surface of perovskite is proposed. The introduction of 2D SnSe2QDs reduces the oxygen vacancy defects and increases the carrier mobility of SnO2. The optimized SnO2 as a buried interface obviously improves the crystallization quality of perovskite. The CA containing abundant active sites of ─NH2/─NH─, ─C═N, CO, ─Cl groups passivate the defects on the surface and grain boundary of perovskite. The alkyl chain of CA also improves the hydrophobicity of perovskite. Moreover, the synergism of SnSe2QDs and CA releases the residual stress and regulates the energy level arrangement at the top and bottom interface of perovskite. Benefiting from these advantages, the bulk and interface non-radiative recombination loss is greatly suppressed and thereby increases the carrier transport and extraction in devices. As a result, the best power conversion efficiency (PCE) of 23.41% for rigid PSCs and the best PCE of 21.84% for flexible PSCs are reached. The rigid PSC maintains 89% of initial efficiency after storing nitrogen for 3100 h. The flexible PSCs retain 87% of the initial PCE after 5000 bending cycles at a bending radius of 5 mm.

Buried Interface Optimization for Flexible Perovskite Solar Cells with High Efficiency and Mechanical Stability.

The power conversion efficiency (PCE) and stability of perovskite solar cells (PSCs) are significantly reduced by defect-induced charge non-radiative recombination. Also, unexpected residual strain in perovskite films leads to an unfavorable impact on the stability and efficiency of PSCs, notably flexible PSCs (f-PSCs). Considering these problems, a thorough and effective strategy is proposed by incorporating phytic acid (PA) into SnO2 as an electron transport layer (ETL). With the addition of PA, the Sn inherent dangling bonds are passivated effectively and thus enhance the conductivity and electron mobility of SnO2 ETL. Meanwhile, the crystallization quality of perovskite is increased largely. Therefore, the interface/bulk defects are reduced. Besides, the residual strain of perovskite film is significantly reduced and the energy level alignment at the SnO2 /perovskite interface becomes more matched. As a result, the champion f-PSC obtains a PCE of 21.08% and rigid PSC obtains a PCE of 21.82%, obviously surpassing the PCE of 18.82% and 19.66% of the corresponding control devices. Notably, the optimized f-PSCs exhibit outstanding mechanical durability, after 5000 cycles of bending with a 5 mm bending radius, the SnO2 -PA-based device preserves 80% of the initial PCE, while the SnO2 -based device only remains 49% of the initial value.

Interface modification of an electron transport layer using europium acetate for enhancing the performance of P3HT-based inorganic perovskite solar cells.

In recent years, although the power conversion efficiency (PCE) of thermally stable all-inorganic CsPbI3 perovskite solar cells (PSCs) had shown a great progress, the most reported CsPbI3 PSCs suffered from the large open-circuit voltage (Voc) loss, which is related to severe nonradiative recombination and a mismatch in energy level at the transport layer/perovskite interface. In this work, europium acetate (EuAc3) as a multifunction interface material is chosen to modify the TiO2/perovskite interface, the crystal quality of CsPbI3 perovskite films is improved, and both bulk and interfacial defects are reduced effectively. Meanwhile, the energy levels arrangement between TiO2 and CsPbI3 perovskites is also optimized, corresponding the raised built-in electric field afford a strength force to accelerate the transport and extraction of charge carriers from CsPbI3 perovskites to TiO2. As a result, the performance of CsPbI3 PSCs is largely enhanced with the PCE of 16.76%. When an Ag electrode was replaced by Au, the PCE further improves to 17.92%, which is the highest for CsPbI3 PSCs with P3HT as the HTL ever reported. Besides, the CsPbI3 PSC with the EuAc3 modification layer maintains 84% of the initial PCE under continuous UV irradiation for 250 h in a nitrogen filled glovebox, being obviously higher than the control devices with only 40% of the initial PCE after UV irradiation for 100 h in the same environment.

[Study on the Effects of Alq3:CsF Composite Cathode Buffer Layer on the Performances of CuPc/C60 Solar Cells].

This paper introduces the methods improving the performance and stability of copper-phthalocyanine(CuPc) / fullerene (C60) small molecule solar cells by using tris-(8-hydroxyquinoline) aluminum(Alq3): cesium fluoride(CsF) composite cathode buffer layer. The device with Alq3:CsF composite cathode buffer layer with a 4 wt. % CsF at a thickness of 5 nm exhibits a power conversion efficiency (PCE) of up to 0.76%, which is an improvement of 49%, compared to a device with single Alq3 cathode buffer layer and half-lifetime of the cell in air at ambient circumstance without any encapsulation is almost 9.8 hours, 6 times higher than that of without buffer layer, so the stability is maintained. The main reason of the device performance improvement is that doping of CsF can adjust the interface energy alignment, optimize the electronic transmission characteristics of Alq3 and improve the short circuit current and the fill factor of the device using ultraviolet-visible absorption, external quantum efficiency and single-electron devices. Placed composite cathode buffer layer devices with different time in the air, by comparing and analyzing current voltage curve, Alq3:CsF can maintain a good stability as Alq3. Alq3:CsF layer can block the diffusion of oxygen and moisture so completely as to improve the lifetime of the device.

Regulating the Crystallization Growth of Sn-Pb Mixed Perovskites Using the 2D Perovskite (4-AMP)PbI4 Substrate for High-Efficiency and Stable Solar Cells.

Sn-Pb mixed perovskite solar cells (PSCs) are developing rapidly and making great progress due to their environmentally friendly advantages. High-crystalline quality perovskite films are essential for obtaining high-efficiency and -stability PSCs. Here, the DJ-phase two-dimensional (2D) perovskite (4-AMP)PbI4 (4-AMP is 4-(aminomethyl) piperidine) was used as a substrate to regulate the crystallization growth of the Sn-Pb mixed perovskite for preparing high-quality perovskite films, and the regulation mechanism was analyzed in detail. The results indicate that the suitable amount of the 2D perovskite substrate is favorable for the formation of PbI2/SnI2 films with wide intergranular gaps and vertical distribution grain boundaries. Moreover, the suitable hydrophobicity of the PbI2/SnI2 film made on the 2D perovskite substrate also provides a better template for regulating the formation and dissolution of prophase perovskite capping. In addition, the 4-AMP cations from the collapsed 2D perovskite substrate can diffuse into PbI2/SnI2 films and interact with PbI2 to form the intermediate (4-AMP)-PbI2-(4-AMP) and with SnI2 to form the 2D perovskite (4-AMP)SnI4. All of these promote the diffusion of FAI/MAI molecules and decrease the crystallization growth rate of the Sn-Pb perovskite and thus increase the conversion levels of the perovskite phase and improve the crystallization orientation and quality of the perovskite, which helps mitigate the erosion of water and oxygen. In addition, the 2D perovskite used as a substrate can passivate the buried interface defects and improve the interfacial contact. Moreover, the diffusion behavior of 4-AMP cations regulates the perovskite energy levels, which match more with those of the electron transport layer. As a result, the champion device made on the (4-AMP)PbI4 substrate acquires a power conversion efficiency (PCE) of 17.7% with an open-circuit voltage (Voc) of 0.806 V, a short-circuit current density (Jsc) of 28.97 mA cm-2, and a fill factor (FF) of 75.86%, far exceeding those of the control device. Meanwhile, the unencapsulated PSCs modified with 4-AH retain above 70% of the initial efficiency value after storage for 1200 h in N2 at room temperature and about 25% of its initial efficiency after exposure to air for nearly 300 h with RH = 30 ± 10% at room temperature, while the control device has only 30% of the initial efficiency and near-zero efficiency at the same conditions.

Multifunction Sandwich Structure Based on Diffusible 2-Chloroethylamine for High-Efficiency and Stable Tin-Lead Mixed Perovskite Solar Cells.

Low-bandgap tin-lead mixed perovskites (PVKs) are necessary for all-perovskite tandem solar cells. This work proposes a multifunctional sandwich structure with 2-chloroethylamine (CEA) as the top and bottom interface layer and perovskite as the core layer. The sandwich structured CEA allows large ClCH2CH2NH3+ and small Cl- to diffuse into the crystal lattice and grain boundaries of perovskites, endowing an excellent antioxidation property by forming Sn(0), coordinating with SnI2, and controlling the perovskite crystallization process. Moreover, the energy level alignment at the interface of the perovskite and transport layer becomes more matched. As a result, the CEA-modified champion device acquires a power conversion efficiency of 18.13% with an open-circuit voltage of 0.82 V and a short-circuit current density of 30.06 mA cm-2. Meanwhile, the environmental stability of CEA-modified devices is substantially enhanced. This work introduces a new strategy for improving the performance and stability of tin-lead mixed perovskite solar cells.

2D Perovsktie Substrate-Assisted CsPbI3 Film Growth for High-Efficiency Solar Cells.

High-quality perovskite films are beneficial for fabricating perovskite solar cells (PSCs) with excellent photoelectric performance. The substrate on which the perovskite film grows plays a profound role in improving the crystallization quality of the perovskite film. Here, we proposed a novel method for optimizing CsPbI3 perovskite films, that is, two-dimensional (2D) perovskite substrate-assisted growth (2D-PSAG) method. The prepared PEA2PbI4 2D perovskite with proper wettability and roughness is used as a substrate to fabricate the high-quality CsPbI3 film. Moreover, it is found that PEA cations show a vertical gradient distribution within the whole CsPbI3 film because of their bottom-up self-diffusion. Also, PEA cations induce the moderate distortion of [PbI6]4- octahedron and slight lattice contraction of CsPbI3 by chemically bonding between Pb and N atoms. Surprisingly, the trace amounts of PEA cations lead to a bottom-up gradient phase transition from γ-CsPbI3 to ß-CsPbI3. Therefore, the energy-level alignment becomes more matched at the interface of the perovskite layer/hole transport layer (poly3-hexylthiophene, P3HT), which denotes a large improvement of hole transport and extraction in PSCs made with the 2D-PSAG method. As a result, the CsPbI3-based PSCs with P3HT as a hole transport layer exhibit a champion efficiency of 17.13%, while the control device exhibits a PCE of only 14.16%. The PSCs made by the 2D-PSAG method retain above 70% of the initial PCE value after storage of 9 days in air (RH 10-20%), while the control device decomposes completely after 9 days. The improved stability could originate from the steric effects of PEA cations and the high crystallization quality of the mixed-phase CsPbI3 film. Therefore, 2D-PSAG is a novel and promising strategy to develop all-inorganic PSCs with high performance and stability.

Effects of the introduced single-wall carbon nanotubes on the performance of blue phosphorescence organic light-emitting diodes.

In this paper, the effects of single-walled carbon nanotubes (SWCNTs) on the performance of blue phosphorescence organic light-emitting diodes (OLEDs) are investigated by altering the place of SWCNTs in prepared devices. Three kinds of OLEDs in which SWCNTs are spin-coated between the organic layer and the cathode or doped into the organic emitting layer or into the hole-injection layer are prepared. It is found that the SWCNTs doped into the hole-injection layer can enhance the current efficiency because the SWCNTs can reduce hole transport ability and balance two kinds of carriers. Even though SWCNTs doped into the organic emitting layer can improve the transport characteristics of polymer, excess holes lead to an imbalance of holes and electrons in the organic layer, and a lower current efficiency is obtained. SWCNTs located between the organic layer and the cathode can enhance the electron injection from the cathode to the organic layer, and the luminance and current efficiency characteristics are effectively improved.

Characteristics of organic light emitting diodes with vanadium oxide solution-treated indium tin oxide.

The effect of indium tin oxide (ITO) in organic light emitting diodes (OLEDs) treated by vanadium penoxide (V2O5) saturation solution was studied. The device with ITO treated by ultraviolet-ozone (UV-ozone) was fabricated in the same run for comparison. It was found that the V2O5 solution-treated devices have much higher current efficiency compared to the device with bare ITO and UV-ozone-treated ITO as the anode. The turn-on voltages were reduced by around 2.5 V, and the luminances were about 1.69 times greater than that of the conventional device at 16 V driving voltage. Series resistances were determined by the slope of the current-voltage curve and the ac impedance spectroscopy technique.

[Luminescence characteristics of PVK doped with Eu-complex Eu(UVA)3Phen].

The present work investigates the photoluminescence (PL) and electroluminescence (EL) characteristics of Eu-complex Eu (UVA)3Phen doped PVK with different doping concentrations. The results indicate that there exists Forster energy transfer from PVK to Eu(UVA)3 phen in the mixed system. It can get good color purity by optimizing the doping concentration of host and guest materials. And the authors can obtain the best doping concentration to be 4% in EL device.

[Effects of hole-injection layers on the performance of blue organic light-emitting diodes].

The present work investigates the effects of different buffer layers on the performance of blue organic light-emitting diodes (OLEDs), and compares them with the device with no buffer layer. Two kinds of blue OLEDs with 4,4'-bis(2,2'-diphenyl vinyl)-1,1'-biphenyl (DPVBi) as the emitting layer, N, N'-bis-(1-naphthyl)-N, N'-1-diphenyl-1,1 '-biphenyl-4, 4'-diamine (NPB) as the hole transporting layer, and copper phthalocyanine (CuPc) and poly(3,4-ethylenedioxythiophene) : poly (styrenesulphonate) PEDOT : PSS as the hole injection layer respectively were fabricated with the structures of ITO/CuPc/NPB/DPVBi/BCP/Alq3 /Al and ITO/PEDOT : PSS/NPB/DPVBi/BCP/Alq3/Al. Moreover, the effects of different preparation technology of CuPc on the performance of OLEDs were also investigated. It was found that the performance of the devices with a hole injection layer is better than that of the device without any hole-injection layer. Although the luminance and efficiency of the water-soluble CuPc based device are worse than that of the device with thermally evaporated CuPc, but better than that of the device with water-soluble PEDOT : PSS. So the water-soluble CuPc is a good hole injection material because it is easier to fabricate the film than traditional CuPc.

[Luminescence characteristics of PVK doped with Ir(Fppy)3].

In the present work, the photoluminescence (PL) and electroluminescence (EL) characteristics of Tris[2-(2,4-difluorophenyl)pyridine]iridium(III) (Ir(Fppy)3) doped poly(n-vinylcarbazole) (PVK) with different doping concentrations were investigated. And a blue phosphorescent organic light-emitting diode (OLED) with the structures of ITO/PEDOT : PSS/PVK : Ir(Fppy)3/BCP/Alq3/LiF/Al was fabricated. The experimental results show that the luminescence performances of devices are different as the doping concentration of Ir(Fppy)3 is different. When the doping concentration of Ir(Fppy)3 is lower, the luminescence of PVK can be found in EL spectra. When the doping concentration is too high, concentration quenching may occur. As the doping concentration is suitable, the luminescence of PVK can not be found, only the luminescence of Ir(Fppy)3 can be found in EL spectra. It is concluded that the device with doping concentration of 4% has the best photoelectric performance according to its current density-voltage-luminance curve.

Interface Modification of a Perovskite/Hole Transport Layer with Tetraphenyldibenzoperiflanthene for Highly Efficient and Stable Solar Cells.

Interface engineering has been recognized as a very effective method to simultaneously improve both efficiency and stability in perovskite solar cells (PSCs). In this work, we report using an excellent small molecular material tetraphenyldibenzoperiflanthene (DBP) to modify the perovskite/Spiro-OMeTAD interface to achieve significantly improved solar cell performance. It is found that the ultrathin DBP interlayer accelerates hole transfer across the FAxMA1-xPbInBr3-n/Spiro-OMeTAD interface and effectively reduces the nonradiative recombination. The Kelvin probe force microscopy and energy band analyses reveal that the DBP modification helps build better matched energy level alignment and smaller energy loss for more fluent hole transport. Consequently, the DBP-treated PSCs achieve an enhanced open-circuit voltage as high as 1.184 V and fill factor as high as 78.2% as well as the negligible hysteresis. The champion PSC made with DBP gives a PCE of 21.49%, significantly increased compared to 19.68% from the reference cell without the modification. Moreover, DBP also serves as a water-resistant protection for improved moisture stability. The PCE of the DBP-treated cells without encapsulation remains more than 84% of its initial efficiency, which is significantly higher than that of the reference PSCs (65%) after 20 days of storage under an air environment with 50-65% humidity. This study provides an effective interface modification material to address notorious stability problems in Spiro-OMeTAD-based PSCs.

[Study on growth mechanism and crystallization phase state of pentacene thin films on p-Si wafer].

The growth mechanism and crystallization phase state were investigated by the methods of atomic force microscopy (AFM) and X-ray diffraction (XRD). The pentacene films were deposited with a self-assembling monolayer by thermal evaporation on p(+)-Si wafer substrates at room temperature and annealed at a constant temperature (80 degrees C) for 120 min. The experimental results show that pentacene films were grown with terraces island structure with the diameter of island of about 100 nm and constituted a layer consisting of faceted grains with a average step height between terraces of 1.54 nm x s(-1), which were accord with the long axis length of pentacene molecule, and the film were vertically grown on the substrate surface. The crystallization of pentacene thin films is shown in XRD pattern. The increase in the thin film thickness introduced a second set of diffraction peaks, which were attributed to the pentacene triclinic bulk phase. The critical thickness of both phases is 150 and 80 nm, respectively. At a film thickness of 150 nm, the triclinic phase diffraction peaks become the dominant phase. This is contrast to the XRD spectrum of very thin film of 80 thickness, where the thin film phase is the only contribution.

Efficiency Enhancement of Perovskite Solar Cells via Electrospun CuO Nanowires as Buffer Layers.

CuO nanowires (NWs) with the diameters ranging from 130 to 275 nm have been successfully prepared by electrospinning technique, followed by a calcination process. Inverted planar heterojunction perovskite solar cells (PSCs) with the structure of indium tin oxide/CuO NWs/poly(3,4-ethylenedioxythiophene) (PEDOT):poly(styrenesulphonate) (PSS)/CH3NH3PbI3/phenyl C61-butyric acid methyl ester/Bphen/Ag were designed, achieving a best power conversion efficiency (PCE) of 16.87%, which is 21% improvement compared to that of the control PSCs without CuO NWs. By the characterizations of an optical microscope, X-ray diffraction, and scanning electron microscopy, it was found that CuO NWs have uniform morphology and orderly arrangement. Electrochemical impedance spectrometry and external quantum efficiency were used to reveal the effect of CuO NWs on the performance of PSCs. Compared to ZnO NWs with the same diameters and quantitative analysis based on a simple model, we conclude that the improvement of PCE by about 13% can be ascribed to the increase of the PEDOT:PSS/CH3NH3PbI3 interface area and the remaining increase of 8% can be attributed to the higher hole mobility of the CuO NWs/PEDOT:PSS composite film. The results indicate that the efficiency of PSCs will have a significant enhancement when the optimal CuO NWs are introduced into the charge transport layer.

Performance Enhancement of Small Molecular Solar Cells by Bilayer Cathode Buffer.

An effective composite bilayer cathode buffer structure is proposed for use in small molecular solar cells. CsF was doped in Alq3 to form the first cathode buffer, leading to small serial resistances. BCP was used as the second cathode buffer to block the holes to the electrode. The optimized bilayer cathode buffer significantly increased the short circuit and fill factor of devices. By integrating this bilayer cathode buffer, the CuPc/C60 small molecular heterojunction cell exhibited a power conversion efficiency of up to 0.8%, which was an improvement of 56% compared to a device with only the Alq3 cathode buffer. Meanwhile, the bilayer cathode buffer still has a good protective effect on the performance of the device.