Experimental Realization of Two Qutrits Gate with Tunable Coupling in Superconducting Circuits.

Gate-based quantum computation has been extensively investigated using quantum circuits based on qubits. In many cases, such qubits are actually made out of multilevel systems but with only two states being used for computational purpose. While such a strategy has the advantage of being in line with the common binary logic, it in some sense wastes the ready-for-use resources in the large Hilbert space of these intrinsic multidimensional systems. Quantum computation beyond qubits (e.g., using qutrits or qudits) has thus been discussed and argued to be more efficient than its qubit counterpart in certain scenarios. However, one of the essential elements for qutrit-based quantum computation, two-qutrit quantum gate, remains a major challenge. In this Letter, we propose and demonstrate a highly efficient and scalable two-qutrit quantum gate in superconducting quantum circuits. Using a tunable coupler to control the cross-Kerr coupling between two qutrits, our scheme realizes a two-qutrit conditional phase gate with fidelity 89.3% by combining simple pulses applied to the coupler with single-qutrit operations. We further use such a two-qutrit gate to prepare an EPR state of two qutrits with a fidelity of 95.5%. Our scheme takes advantage of a tunable qutrit-qutrit coupling with a large on:off ratio. It therefore offers both high efficiency and low crosstalk between qutrits, thus being friendly for scaling up. Our Letter constitutes an important step toward scalable qutrit-based quantum computation.

Scalable Method for Eliminating Residual ZZ Interaction between Superconducting Qubits.

Unwanted ZZ interaction is a quantum-mechanical crosstalk phenomenon which correlates qubit dynamics and is ubiquitous in superconducting qubit systems. It adversely affects the quality of quantum operations and can be detrimental in scalable quantum information processing. Here we propose and experimentally demonstrate a practically extensible approach for complete cancellation of residual ZZ interaction between fixed-frequency transmon qubits, which are known for long coherence and simple control. We apply to the intermediate coupler that connects the qubits a weak microwave drive at a properly chosen frequency in order to noninvasively induce an ac Stark shift for ZZ cancellation. We verify the cancellation performance by measuring vanishing two-qubit entangling phases and ZZ correlations. In addition, we implement a randomized benchmarking experiment to extract the idling gate fidelity which shows good agreement with the coherence limit, demonstrating the effectiveness of ZZ cancellation. Our method allows independent addressability of each qubit-qubit connection and is applicable to both nontunable and tunable couplers, promising better compatibility with future large-scale quantum processors.

Experimental Realization of Nonadiabatic Shortcut to Non-Abelian Geometric Gates.

When a quantum system is driven slowly through a parametric cycle in a degenerate Hilbert space, the state would acquire a non-Abelian geometric phase, which is stable and forms the foundation for holonomic quantum computation (HQC). However, in the adiabatic limit, the environmental decoherence becomes a significant source of errors. Recently, various nonadiabatic holonomic quantum computation (NHQC) schemes have been proposed, but all at the price of increased sensitivity to control errors. Alternatively, there exist theoretical proposals for speeding up HQC by the technique of "shortcut to adiabaticity" (STA), but no experimental demonstration has been reported so far, as these proposals involve a complicated control of four energy levels simultaneously. Here, we propose and experimentally demonstrate that HQC via shortcut to adiabaticity can be constructed with only three energy levels, using a superconducting qubit in a scalable architecture. With this scheme, all holonomic single-qubit operations can be realized nonadiabatically through a single cycle of state evolution. As a result, we are able to experimentally benchmark the stability of STA+HQC against NHQC in the same platform. The flexibility and simplicity of our scheme makes it also implementable on other systems, such as nitrogen-vacancy center, quantum dots, and nuclear magnetic resonance. Finally, our scheme can be extended to construct two-qubit holonomic entangling gates, leading to a universal set of STAHQC gates.

Simulation of higher-order topological phases and related topological phase transitions in a superconducting qubit.

Higher-order topological phases give rise to new bulk and boundary physics, as well as new classes of topological phase transitions. While the realization of higher-order topological phases has been confirmed in many platforms by detecting the existence of gapless boundary modes, a direct determination of the higher-order topology and related topological phase transitions through the bulk in experiments has still been lacking. To bridge the gap, in this work we carry out the simulation of a two-dimensional second-order topological phase in a superconducting qubit. Owing to the great flexibility and controllability of the quantum simulator, we observe the realization of higher-order topology directly through the measurement of the pseudo-spin texture in momentum space of the bulk for the first time, in sharp contrast to previous experiments based on the detection of gapless boundary modes in real space. Also through the measurement of the evolution of pseudo-spin texture with parameters, we further observe novel topological phase transitions from the second-order topological phase to the trivial phase, as well as to the first-order topological phase with nonzero Chern number. Our work sheds new light on the study of higher-order topological phases and topological phase transitions.

Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask.

The existence of high threading dislocation density (TDD) in GaN-based epilayers is a long unsolved problem, which hinders further applications of defect-sensitive GaN-based devices. Multiple-modulation of epitaxial lateral overgrowth (ELOG) is used to achieve high-quality GaN template on a novel serpentine channel patterned sapphire substrate (SCPSS). The dislocation blocking brought by the serpentine channel patterned mask, coupled with repeated dislocation bending, can reduce the dislocation density to a yet-to-be-optimized level of ∼2 × 10(5) to 2 × 10(6) cm(-2). About 80% area utilization rate of GaN with low TDD and stress relaxation is obtained. The periodical variations of dislocation density, optical properties and residual stress in GaN-based epilayers on SCPSS are analyzed. The quantum efficiency of InGaN/GaN multiple quantum wells (MQWs) on it can be increased by 52% compared with the conventional sapphire substrate. The reduced nonradiative recombination centers, the enhanced carrier localization, and the suppressed quantum confined Stark effect, are the main determinants of improved luminous performance in MQWs on SCPSS. This developed ELOG on serpentine shaped mask needs no interruption and regrowth, which can be a promising candidate for the heteroepitaxy of semipolar/nonpolar GaN and GaAs with high quality.