Superior Carrier Mobility Enabled by the Charge Channel Leads to Enhanced Thermoelectric Performance in BiCuSeO Composites.

BiCuSeO oxyselenides possess a highlighted thermoelectric performance among oxides, which originates from their intrinsically low thermal conductivity. However, intrinsic factors causing low thermal transport are also detrimental to carrier transport, leading to ultralow carrier mobility and relatively low electrical transport properties. Here, high-conductivity single-wall carbon nanotubes (SWCNTs) are adopted as the charge channels to be embedded in a BiCuSeO-based matrix, providing a transport pathway for charge carriers. The results show that carrier mobility is increased to 188 cm2 V-1 s-1 due to the SWCNTs composited, triggering an enhancement in electrical transport properties. Besides, the SWCNTs embedded in the matrix introduce abundant interfaces, suppressing phonon transport and depressing lattice thermal conductivity. With these achievements, a maximum zT of 0.84 at 818 K is realized in the composite with 0.1 wt% SWCNTs. The mechanical property of the composites is strengthened as well because of the SWCNTs. The work indicates that the SWCNTs, as the charge channels, propose an effective approach for enhancing carrier mobility in BiCuSeO-based materials, finally optimizing the thermoelectric performance as well as the mechanical property.

Interstitials in Thermoelectrics.

Defect structure is pivotal in advancing thermoelectric performance with interstitials being widely recognized for their remarkable roles in optimizing both phonon and electron transport properties. Diverse interstitial atoms are identified in previous works according to their distinct roles and can be classified into rattling interstitial, decoupling interstitial, interlayer interstitial, dynamic interstitial, and liquid interstitial. Specifically, rattling interstitial can cause phonon resonance in cage compound to scatter phonon transport; decoupling interstitial can contribute to phonon blocking and electron transport due to their significantly different mean free paths; interlayer interstitial can facilitate out-of-layer electron transport in layered compounds; dynamic interstitial can tune temperature-dependent carrier density and optimize electrical transport properties at wide temperatures; liquid interstitial could improve the carrier mobility at homogeneous dispersion state. All of these interstitials have positive impact on thermoelectric performance by adjusting transport parameters. This perspective therefore intends to provide a thorough overview of advances in interstitial strategy and highlight their significance for optimizing thermoelectric parameters. Finally, the profound potential for extending interstitial strategy to various other thermoelectric systems is discussed and some future directions in thermoelectric material are also outlined.

Synergistically Optimized Electron and Phonon Transport of Polycrystalline BiCuSeO via Pb and Yb Co-Doping.

Polycrystalline BiCuSeO is considered as a promising thermoelectric material due to its intrinsically low thermal conductivity and moderate Seebeck coefficient. However, its low electrical conductivity and coupled electron-phonon transport properties restrict the further improvement of the thermoelectric performance. In this work, Pb and Yb dopants are incorporated into BiCuSeO to substitute for Bi sites via ball milling and high-pressure and high-temperature sintering, leading to a synergistic optimization of the electron and phonon transport and improved thermoelectric performance. The carrier concentration exhibits an enhancement with increasing Pb&Yb co-doping contents. Meanwhile, the decreased carrier mobility is suppressed appropriately by coordinating with the interplay of Pb and Yb dopants on the electronic structure. Besides, Pb&Yb co-doping combined with high-pressure and high-temperature sintering introduces abundant grain boundaries, dislocations, and point defects to effectively decrease the lattice thermal conductivity by scattering phonons in a broad frequency range. Coupled with the synergistic optimization of the electrical and thermal properties, a maximum zT of 1.2 is achieved in Bi0.88Pb0.06Yb0.06CuSeO at 850 K, which significantly outperforms the majority of oxygen-containing thermoelectric materials. Our study suggests that dual doping of bivalent ions and rare-earth elements at Bi sites is an effective strategy for improving the thermoelectric performance of BiCuSeO.