Effective Manipulation of a Colossal Second-Order Transverse Response in an Electric-Field-Tunable Graphene Moiré System.

The second-order nonlinear transport illuminates a frequency-doubling response emerging in quantum materials with a broken inversion symmetry. The two principal driving mechanisms, the Berry curvature dipole and the skew scattering, reflect various information including ground-state symmetries, band dispersions, and topology of electronic wave functions. However, effective manipulation of them in a single system has been lacking, hindering the pursuit of strong responses. Here, we report on the effective manipulation of the two mechanisms in a single graphene moiré superlattice, AB-BA stacked twisted double bilayer graphene. Most saliently, by virtue of the high tunability of moiré band structures and scattering rates, a record-high second-order transverse conductivity ∼ 510 µm S V-1 is observed, which is orders of magnitude higher than any reported values in the literature. Our findings establish the potential of electrically tunable graphene moiré systems for nonlinear transport manipulations and applications.

Giant Second-Order Nonlinear Hall Effect in Twisted Bilayer Graphene.

In the second-order response regime, the Hall voltage can be nonzero without time-reversal symmetry breaking but inversion symmetry breaking. Multiple mechanisms contribute to the nonlinear Hall effect. The disorder-related contributions can enter the NLHE in the leading role, but experimental investigations are scarce, especially the exploration of the contributions from different disorder sources. Here, we report a giant nonlinear response in twisted bilayer graphene, dominated by disorder-induced skew scattering. The magnitude and direction of the second-order nonlinearity can be effectively tuned by the gate voltage. A peak value of the second-order Hall conductivity reaching 8.76 µm SV^{-1} is observed close to the full filling of the moiré band, four order larger than the intrinsic contribution detected in WTe_{2}. The scaling shows that the giant second-order nonlinear Hall effect in twisted bilayer graphene stems from the collaboration of the static (impurities) and dynamic (phonons) disorders. It is mainly determined by the impurity skew scattering at 1.7 K. The phonon skew scattering, however, has a much larger coupling coefficient, and becomes comparable to the impurity contribution as the temperature rises. Our observations provide a comprehensive experimental understanding of the disorder-related mechanisms in the nonlinear Hall effect.

Heterodimensional Kondo superlattices with strong anisotropy.

Localized magnetic moments in non-magnetic materials, by interacting with the itinerary electrons, can profoundly change the metallic properties, developing various correlated phenomena such as the Kondo effect, heavy fermion, and unconventional superconductivity. In most Kondo systems, the localized moments are introduced through magnetic impurities. However, the intrinsic magnetic properties of materials can also be modulated by the dimensionality. Here, we report the observation of Kondo effect in a heterodimensional superlattice VS2-VS, in which arrays of the one-dimensional (1D) VS chains are encapsulated by two-dimensional VS2 layers. In such a heterodimensional Kondo superlattice, we observe the typical Kondo effect but with intriguing anisotropic field dependence. This unique anisotropy is determined to originate from the magnetic anisotropy which has the root in the unique 1D chains in the structure, as corroborated by the first-principles calculation. Our results open up a novel avenue of studying exotic correlated physics in heterodimensional materials.

Superconducting quantum interference effect in NbSe2/NbSe2van der Waals junctions.

Layered materials with exotic properties, such as superconducting, ferromagnetic, and so on, have attracted broad interest. The advances in van der Waals (vdW) stacking technology have enabled the fabrication of numerous types of junction structures. The dangling-bond-free interface provides an ideal platform to generate and probe various physics phenomena. Typical progress is the realization of vdW Josephson junctions with high supercurrent transparency constructed of two NbSe2layers. Here we report the observation of periodic oscillations of the voltage drop across a NbSe2/NbSe2vdW junctions under an in-plane magnetic field. The voltage-drop oscillations come from the interface and the magnitude of the oscillations has a non-monotonic temperature dependence which increases first with increasing temperature. These features make the oscillations different from the modulation of the critical current of a Josephson junction by the magnetic field and the Little-Parks effect. The oscillations are determined to be generated by the quantum interference effect between two superconducting junctions formed between the two NbSe2layers. Our results thus provide a unique way to make an in-plane superconducting quantum interference device that can survive under a high magnetic field utilizing the Ising-paring nature of the NbSe2.

Universal numerical calculation method for the Berry curvature and Chern numbers of typical topological photonic crystals.

Chern number is one of the most important criteria by which the existence of a topological photonic state among various photonic crystals can be judged; however, few reports have presented a universal numerical calculation method to directly calculate the Chern numbers of different topological photonic crystals and have denoted the influence of different structural parameters. Herein, we demonstrate a direct and universal method based on the finite element method to calculate the Chern number of the typical topological photonic crystals by dividing the Brillouin zone into small zones, establishing new properties to obtain the discrete Chern number, and simultaneously drawing the Berry curvature of the first Brillouin zone. We also explore the manner in which the topological properties are influenced by the different structure types, air duty ratios, and rotating operations of the unit cells; meanwhile, we obtain large Chern numbers from-2 to 4. Furthermore, we can tune the topological phase change via different rotation operations of triangular dielectric pillars. This study provides a highly efficient and simple method for calculating the Chern numbers and plays a major role in the prediction of novel topological photonic states.