Sensitive Room-Temperature Graphene Photothermoelectric Terahertz Detector Based on Asymmetric Antenna Coupling Structure.

A highly sensitive room-temperature graphene photothermoelectric terahertz detector, with an efficient optical coupling structure of asymmetric logarithmic antenna, was fabricated by planar micro-nano processing technology and two-dimensional material transfer techniques. The designed logarithmic antenna acts as an optical coupling structure to effectively localize the incident terahertz waves at the source end, thus forming a temperature gradient in the device channel and inducing the thermoelectric terahertz response. At zero bias, the device has a high photoresponsivity of 1.54 A/W, a noise equivalent power of 19.8 pW/Hz1/2, and a response time of 900 ns at 105 GHz. Through qualitative analysis of the response mechanism of graphene PTE devices, we find that the electrode-induced doping of graphene channel near the metal-graphene contacts play a key role in the terahertz PTE response. This work provides an effective way to realize high sensitivity terahertz detectors at room temperature.

Responsivity and NEP Improvement of Terahertz Microbolometer by High-Impedance Antenna.

The antenna-coupled microbolometer with suspended titanium heater and thermistor was attractive as a terahertz (THz) detector due to its structural simplicity and low noise levels. In this study, we attempted to improve the responsivity and noise-equivalent power (NEP) of the THz detector by using high-resistance heater stacked on the meander thermistor. A wide range of heater resistances were prepared by changing the heater width and thickness. It was revealed that the electrical responsivity and NEP could be improved by increasing the heater's resistance. To make the best use of this improvement, a high-impedance folded dipole antenna was introduced, and the optical performance at 1 THz was found to be better than that of the conventional halfwave dipole antenna combined with a low-resistance heater. Both the electrical and optical measurement results indicated that the increase in heater resistance could reduce the thermal conductance in the detector, thus improved the responsivity and NEP even if the thermistor resistance was kept the same.

On-Chip Modification of Titanium Electrothermal Characteristics by Joule Heating: Application to Terahertz Microbolometer.

This study demonstrates the conversion of metallic titanium (Ti) to titanium oxide just by conducting electrical current through Ti thin film in vacuum and increasing the temperature by Joule heating. This led to the improvement of electrical and thermal properties of a microbolometer. A microbolometer with an integrated Ti thermistor and heater width of 2.7 µm and a length of 50 µm was fabricated for the current study. Constant-voltage stresses were applied to the thermistor wire to observe the effect of the Joule heating on its properties. Thermistor resistance ~14 times the initial resistance was observed owing to the heating. A negative large temperature coefficient of resistance (TCR) of -0.32%/K was also observed owing to the treatment, leading to an improved responsivity of ~4.5 times from devices with untreated Ti thermistors. However, this does not improve the noise equivalent power (NEP), due to the increased flicker noise. Microstructural analyses with transmission electron microscopy (TEM), transmission electron diffraction (TED) and energy dispersive X-ray (EDX) confirm the formation of a titanium oxide (TiOx) semiconducting phase on the Ti phase (~85% purity) deposited initially, further to the heating. Formation of TiOx during annealing could minimize the narrow width effect, which we reported previously in thin metal wires, leading to enhancement of responsivity.

Comparative Study of Single Crystal and Polymeric Pyroelectric Detectors in the 0.9-2.0 THz Range Using Monochromatic Laser Radiation of the NovoFEL.

The development of efficient and reliable sensors operating at room temperature is essential to advance the application of terahertz (THz) science and technology. Pyroelectric THz detectors are among the best candidates, taking into account their variety, outstanding performance, ease of fabrication, and robustness. In this work, we compare the performance of six different detectors, based on either LaTiO3 crystal or different polymeric films, using monochromatic radiation of the Novosibirsk Free Electron Laser facility (NovoFEL) in the frequency range of 0.9-2.0 THz. The main characteristics, including noise equivalent power and frequency response, were determined for all of them. Possible reasons for the differences in the obtained characteristics are discussed on the basis of the main physicochemical characteristics and optical properties of the sensitive area. At least three detectors showed sufficient sensitivity to monitor the shape and duration of the THz macropulses utilizing only a small fraction of the THz radiation from the primary beam. This capability is crucial for accurate characterization of THz radiation during the main experiment at various specialized endstations at synchrotrons and free electron lasers. As an example of such characterization, the typical stability of the average NovoFEL radiation power at the beamline of the electron paramagnetic resonance endstation was investigated.

Efficiency of electron cooling in cold-electron bolometers with traps.

Electron on-chip cooling from the base temperature of 300 mK is very important for highly sensitive detectors operating in space due to problems of dilution fridges at low gravity. Electron cooling is also important for ground-based telescopes equipped with 3He cryostats being able to function at any operating angle. This work is aimed at the investigation of electron cooling in the low-temperature range. New samples of cold-electron bolometers with traps and hybrid superconducting/ferromagnetic absorbers have shown a temperature reduction of the electrons in the refrigerator junctions from 300 to 82 mK, from 200 to 33 mK, and from 100 to 25 mK in the idle regime without optical power load. The electron temperature was determined by solving heat balance equations with account of the leakage current, sixth power of temperature in the whole temperature range, and the Andreev current using numerical methods and an automatic fit algorithm.

A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor.

A double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) as a terahertz (THz) detector at 315 GHz frequency is proposed and fabricated in this paper. The structure of the epitaxial layer material in the detector is optimized, and the performance of the GaN HEMT THz detector is improved. The maximum responsivity of 10 kV/W and minimum noise equivalent power (NEP) of 15.5 pW/Hz0.5 are obtained at the radiation frequency of 315 GHz. The results are comparable to and even more promising than the reported single-channel (SC) GaN HEMT detectors. The enhancement of THz response and the reduction of NEP of the DC GaN HEMT detector mainly results from the interaction of 2DEG in the upper and lower channels, which improves the self-mixing effect of the detector. The promising experimental results mean that the proposed DC GaN/AlGaN HEMT THz detector is capable of the practical applications of THz detection.

Graphene-Silicon Device for Visible and Infrared Photodetection.

The fabrication of a graphene-silicon (Gr-Si) junction involves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned n-type Si substrate, covered by Si3N4, produces a Gr-Si device, in which the parallel MIS consists of a Gr-Si3N4-Si structure surrounding the Gr-Si junction. The Gr-Si device exhibits rectifying behavior with a rectification ratio up to 104. The investigation of its temperature behavior is necessary to accurately estimate the Schottky barrier height (SBH) at zero bias, φb0 = 0.24 eV, the effective Richardson's constant, A* = 7 × 10-10 AK-2 cm-2, and the diode ideality factor n = 2.66 of the Gr-Si junction. The device is operated as a photodetector in both photocurrent and photovoltage mode in the visible and infrared (IR) spectral regions. A responsivity of up to 350 mA/W and an external quantum efficiency (EQE) of up to 75% are achieved in the 500-1200 nm wavelength range. Decreases in responsivity to 0.4 mA/W and EQE to 0.03% are observed above 1200 nm, which is in the IR region beyond the silicon optical band gap, in which photoexcitation is driven by graphene. Finally, a model based on two parallel and opposite diodes, one for the Gr-Si junction and the other for the Gr-Si3N4-Si MIS structure, is proposed to explain the electrical behavior of the Gr-Si device.

Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor.

Assuming that the 0.6-µm silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology, different Si-based temperature sensors such as metal-oxide-semiconductor field-effect transistor (MOSFET) (n-channel and p-channel), pn-junction diode (with p-body doping and without doping), and resistors (n+ or p+ single crystalline Si and n+ polycrystalline Si) were designed and characterized for its possible use in 1-THz antenna-coupled bolometers. The use of a half-wave dipole antenna connected to the heater end was assumed, which limited the integrated temperature sensor/heater area to be 15 × 15 µm. Our main focus was to evaluate the performances of the temperature sensor/heater part, and the optical coupling between the incident light and heater via an antenna was not included in the evaluation. The electrothermal feedback (ETF) effect due to the bias current was considered in the performance estimation. A comparative analysis of various SOI bolometers revealed the largest responsivity (Rv) of 5.16 kV/W for the n-channel MOSFET bolometer although the negative ETF in MOSFET reduced the Rv. The noise measurement of the n-channel MOSFET showed the NEP of 245 pW/Hz1/2, which was more than one order of magnitude smaller than that of the n+ polycrystalline Si resistive bolometer (6.59 nW/Hz1/2). The present result suggests that the n-channel MOSFET can be a promising detector for THz applications.

Resolving Weak Light of Sub-picowatt per Square Centimeter by Hybrid Perovskite Photodetectors Enabled by Noise Reduction.

A highly sensitive hybrid perovskite photodetector is demonstrated to be able to directly resolve light irradiance down to sub-picowatts per square centimeter, in good accordance with the calculated noise equivalent power, which is enabled by electron and hole transport layer engineering, especially the trap passivation effect of the double fullerene layer.