Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor.

This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD.

Performance of semiconductor dosimeters with a range of radiation qualities used for mammography: A calibration laboratory study.

PURPOSE: To investigate the radiation quality dependence of the response of commercial semiconductor-based dosimeters, and to estimate potential errors and uncertainties related to different measurement and calibration scenarios. METHODS: All measurement results were compared to reference values measured at the IAEA dosimetry laboratory which is traceable to the international system of units (SI). Energy dependence of the response of eight semiconductor dosimeters were determined for five different anode-filter combinations and tube voltages from 25 to 35 kV. For systems capable of deriving half value layer (HVL) and tube voltage from measurements, calibration coefficients for these measurements were calculated. RESULTS: For six dosimeters, the maximum deviations from the reference value of the air kerma measurement were within ±5% as required by IEC 61674. Calibration coefficients for radiation qualities (anode-filter and tube voltage combinations) relative to reference radiation quality Mo-Mo 28 kV deviate up to 12%. HVL and tube voltage measurements exhibited deviations up to 11% and 10%, respectively. CONCLUSIONS: The air kerma responses of modern semiconductor dosimeters have a small energy dependence. However, no dosimeter tested complied with the accuracy limits stated by the manufacturer for tube voltage measurements, and only two dosimeters complied with the limits for HVL measurements. Absolute measurement of HVL and tube voltage with semiconductor dosimeters have to be verified for actual clinical radiation conditions on clinical mammography systems. Semiconductor dosimeters can be used for quality control measurements if individual calibration coefficients are available for the radiation condition applied. If other conditions are applied, additional uncertainty needs to be considered, particularly in the case of HVL and tube voltage measurements.

The performance of a multi guard ring (MGR) diode for clinical electron beams dosimetry.

The dosimetric response of a multi guard ring structure (MGR) diode has been studied with clinical electron beam energies from 5 MeV to 15 MeV. The results showed that the MGR dose response is linear in the range of 5-320 cGy and presents reproducibility with variation coefficients less than 0.4%. The field output factors measured with the MGR agreed within 2% with those measured with an ionization chamber. This study evidences that this diode can be used for clinical electron beam dosimetry.