Bright and Stable Yellow Quantum Dot Light-Emitting Diodes Through Core-Shell Nanostructure Engineering.

Solution-processed and efficient yellow quantum dot light-emitting diodes (QLEDs) are considered key optoelectronic devices for lighting, display, and signal indication. However, limited synthesis routes for yellow quantum dots (QDs), combined with inferior stress-relaxation of the core-shell interface, pose challenges to their commercialization. Herein, a nanostructure tailoring strategy for high-quality yellow CdZnSe/ZnSe/ZnS core/shell QDs using a "stepwise high-temperature nucleation-shell growth" method is introduced. The synthesized CdZnSe-based QDs effectively smoothed the release stress of the core-shell interface and revealed a near-unit photoluminescence quantum yield, with nonblinking behavior and matched energy level, which accelerated radiative recombination and charge injection balance for device operation. Consequently, the yellow CdZnSe-based QLEDs exhibited a peak external quantum efficiency of 23.7%, a maximum luminance of 686 050 cd m-2, and a current efficiency of 103.2 cd A-1, along with an operating half-lifetime of 428 523 h at 100 cd m-2. To the best of the knowledge, the luminance and operational stability of the device are found to be the highest values reported for yellow LEDs. Moreover, devices with electroluminescence (EL) peaks at 570-605 nm exhibited excellent EQEs, surpassing 20%. The work is expected to significantly push the development of RGBY-based display panels and white LEDs.

All-vacuum fabrication of yellow perovskite light-emitting diodes.

Yellow light-emitting diodes (LEDs) are widely utilized in high-quality lighting, light communication, indicator lamps, etc. Owing to their outstanding material properties and device performance, the metal halide perovskites have demonstrated a significant potential for LED applications. However, the performance of the yellow perovskite LEDs (PeLEDs) is inferior to that of their green and red counterparts, with the maximum external quantum efficiency (EQE) limited to ∼3.1%. Further, a majority of the yellow PeLEDs are fabricated using the spin-coating methods. The current study reports the development of the yellow CsPbBr2I PeLEDs based on an all-vacuum deposition approach, which has been widely employed in the commercial organic LEDs (OLEDs). By controlling the co-evaporation rate of CsI and PbBr2, the growth kinetics of the perovskite layer are regulated to achieve a small grain size of ∼31.8 nm. Consequently, an improved radiative recombination rate (8.04 × 10-9 cm3/s) is obtained owing to the spatial confinement effect. The PeLEDs based on the optimal perovskite film demonstrate the yellow electroluminescence (574 nm) with a maximum EQE of ∼3.7% and luminance of ∼16,200 cd/m2, thus, representing one of the most efficient and bright yellow PeLEDs. Overall, this study provides a useful guideline for realizing the efficient PeLEDs based on the thermal evaporation strategy and highlights the potential of PeLED as an efficient and bright yellow light source.

Carbazole-Containing Polymer-Assisted Trap Passivation and Hole-Injection Promotion for Efficient and Stable CsCu2 I3 -Based Yellow LEDs.

Perovskite light-emitting diodes (LEDs) are emerging light sources for next-generation lighting and display technologies; however, their development is greatly plagued by difficulty in achieving yellow electroluminescence, environmental instability, and lead toxicity. Copper halide CsCu2 I3 with intrinsic yellow emission emerges as a highly promising candidate for eco-friendly LEDs, but the electroluminescent performance is limited by defect-related nonradiative losses and inefficient charge transport/injection. To solve these issues, a hole-transporting poly(9-vinlycarbazole) (PVK)-incorporated engineering into CsCu2 I3 emitter is proposed. PVK with carbazole groups is permeated at the grain boundaries of CsCu2 I3 films by interacting with the uncoordinated Cu+ , reducing the CuCs and CuI antisite defects to increase the radiative recombination and enhancing the hole mobility to balance the charge transport/injection, resulting in substantially enhanced device performances. Eventually, the yellow LEDs exhibit an 8.5-fold enhancement of external quantum efficiency, and the half-lifetime reaches 14.6 h, representing the most stable yellow LEDs based on perovskite systems reported so far.