Comparison of n-type Gd(2)O(3) and Gd-doped HfO(2).
J Phys Condens Matter
; 21(4): 045602, 2009 Jan 28.
Article
em En
| MEDLINE
| ID: mdl-21715816
ABSTRACT
Gd(2)O(3) and Gd-doped HfO(2) films were deposited on p-type silicon substrates in a reducing atmosphere. Gd 4f photoexcitation peaks at roughly 7 and 5 eV below the valence band maximum have been identified using the resonant photoemission of Gd(2)O(3) and Gd-doped HfO(2) films, respectively. In the case of Gd(2)O(3), strong hybridization with the O 2p band is demonstrated, and there is evidence that the Gd 4f weighted band exhibits dispersion in the bulk band structure. The rectifying (diode-like) properties of Gd-doped HfO(2)-silicon and Gd(2)O(3)-silicon heterojunctions are demonstrated.
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MEDLINE
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En
Ano de publicação:
2009
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Article