Highly efficient CW parametric conversion at 1550 nm in SOI waveguides by reverse biased p-i-n junction.
Opt Express
; 20(12): 13100-7, 2012 Jun 04.
Article
em En
| MEDLINE
| ID: mdl-22714337
ABSTRACT
In this paper we present four-wave mixing (FWM) based parametric conversion experiments in p-i-n diode assisted silicon-on-insulator (SOI) nano-rib waveguides using continuous-wave (CW) light around 1550 nm wavelength. Using a reverse biased p-i-n waveguide diode we observe an increase of the wavelength conversion efficiency of more than 4.5 dB compared to low loss nano-rib waveguides without p-i-n junction, achieving a peak efficiency of -1 dB. Conversion efficiency improves also by more than 7 dB compared to previously reported experiments deploying 1.5 µm SOI waveguides with p-i-n structure. To the best of our knowledge, the observed peak conversion efficiency of -1dB is the highest CW efficiency in SOI reported so far.
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MEDLINE
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En
Ano de publicação:
2012
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Article