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The coupled atom transistor.
Jehl, X; Voisin, B; Roche, B; Dupont-Ferrier, E; De Franceschi, S; Sanquer, M; Cobian, M; Niquet, Y-M; Sklénard, B; Cueto, O; Wacquez, R; Vinet, M.
Afiliação
  • Jehl X; University Grenoble Alpes, INAC, F-38000 Grenoble, France and CEA, INAC-SPSMS, F-38054 Grenoble, France.
J Phys Condens Matter ; 27(15): 154206, 2015 Apr 22.
Article em En | MEDLINE | ID: mdl-25783566
We describe the first implementation of a coupled atom transistor where two shallow donors (P or As) are implanted in a nanoscale silicon nanowire and their electronic levels are controlled with three gate voltages. Transport spectroscopy through these donors placed in series is performed both at zero and microwave frequencies. The coherence of the charge transfer between the two donors is probed by Landau-Zener-Stückelberg interferometry. Single-charge transfer at zero bias (electron pumping) has been performed and the crossover between the adiabatic and non-adiabatic regimes is studied.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article