High-&#954; Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors.

High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors.

Woods, Keenan N; Chiang, Tsung-Han; Plassmeyer, Paul N; Kast, Matthew G; Lygo, Alexander C; Grealish, Aidan K; Boettcher, Shannon W; Page, Catherine J.

Afiliação

Woods KN; Department of Chemistry & Biochemistry and Materials Science Institute, University of Oregon , Eugene, Oregon 97403, United States.
Chiang TH; School of Electrical Engineering and Computer Science, Oregon State University , Corvallis, Oregon 97331, United States.
Plassmeyer PN; Department of Chemistry & Biochemistry and Materials Science Institute, University of Oregon , Eugene, Oregon 97403, United States.
Kast MG; Department of Chemistry & Biochemistry and Materials Science Institute, University of Oregon , Eugene, Oregon 97403, United States.
Lygo AC; Department of Chemistry & Biochemistry and Materials Science Institute, University of Oregon , Eugene, Oregon 97403, United States.
Grealish AK; Department of Chemistry & Biochemistry and Materials Science Institute, University of Oregon , Eugene, Oregon 97403, United States.
Boettcher SW; Department of Chemistry & Biochemistry and Materials Science Institute, University of Oregon , Eugene, Oregon 97403, United States.
Page CJ; Department of Chemistry & Biochemistry and Materials Science Institute, University of Oregon , Eugene, Oregon 97403, United States.

ACS Appl Mater Interfaces ; 9(12): 10897-10903, 2017 Mar 29.

Article em En | MEDLINE | ID: mdl-28262013