High frequency optomechanical disk resonators in III-V ternary semiconductors.
Opt Express
; 25(20): 24639-24649, 2017 Oct 02.
Article
em En
| MEDLINE
| ID: mdl-29041409
ABSTRACT
Optomechanical systems based on nanophotonics are advancing the field of precision motion measurement, quantum control and nanomechanical sensing. In this context III-V semiconductors offer original assets like the heteroepitaxial growth of optimized metamaterials for photon/phonon interactions. GaAs has already demonstrated high performances in optomechanics but suffers from two photon absorption (TPA) at the telecom wavelength, which can limit the cooperativity. Here, we investigate TPA-free III-V semiconductor materials for optomechanics applications GaAs lattice-matched In0.5Ga0.5P and Al0.4Ga0.6As. We report on the fabrication and optical characterization of high frequency (500-700 MHz) optomechanical disks made out of these two materials, demonstrating high optical and mechanical Q in ambient conditions. Finally we achieve operating these new devices as laser-sustained optomechanical self-oscillators, and draw a first comparative study with existing GaAs systems.
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MEDLINE
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En
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2017
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Article