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Valley Polarization of Trions and Magnetoresistance in Heterostructures of MoS2 and Yttrium Iron Garnet.
Peng, Bo; Li, Qi; Liang, Xiao; Song, Peng; Li, Jian; He, Keliang; Fu, Deyi; Li, Yue; Shen, Chao; Wang, Hailong; Wang, Chuangtang; Liu, Tao; Zhang, Li; Lu, Haipeng; Wang, Xin; Zhao, Jianhua; Xie, Jianliang; Wu, Mingzhong; Bi, Lei; Deng, Longjiang; Loh, Kian Ping.
Afiliação
  • Peng B; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Li Q; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Liang X; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Song P; Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 3 Science Drive 3, Singapore 117543.
  • Li J; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • He K; IBM , Malta, New York 12020, United States.
  • Fu D; Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 3 Science Drive 3, Singapore 117543.
  • Li Y; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Shen C; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
  • Wang H; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
  • Wang C; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Liu T; Department of Physics, Colorado State University , Fort Collins, Colorado 80523, United States.
  • Zhang L; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Lu H; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Wang X; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Zhao J; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
  • Xie J; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Wu M; Department of Physics, Colorado State University , Fort Collins, Colorado 80523, United States.
  • Bi L; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Loh KP; Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 3 Science Drive 3, Singapore 117543.
ACS Nano ; 11(12): 12257-12265, 2017 12 26.
Article em En | MEDLINE | ID: mdl-29182851

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article