Analog Figure-of-Merits Comparison of Gate Workfunction Variability and Random Discrete Dopant Between Inversion-Mode and Junctionless Nanowire FETs.
J Nanosci Nanotechnol
; 18(9): 6598-6601, 2018 09 01.
Article
em En
| MEDLINE
| ID: mdl-29677841
ABSTRACT
The analog figure-of-merits (FOMs) of conventional inversion-mode (IM) and junctionless (JL) NanoWire Field Effect Transistor (NWFET) have been investigated, considering the gate Work-Function Variability (WFV) and Random Discrete Dopant (RDD) using 3-dimensional (3D) TCAD simulation. While the JL-NWFET shows higher immune to WFV on analog FOMs, it can be easily affected by RDD due to higher channel doping level. On the other hand, the IM-NWFET shows stronger correlation between transconductance (gm) and gate capacitance (Cgg), leading to similar variation in cut-off frequency (ft) even though it shows larger gm and Cgg variation compared to JL-NWFET.
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Base de dados:
MEDLINE
Tipo de estudo:
Clinical_trials
Idioma:
En
Ano de publicação:
2018
Tipo de documento:
Article