Impact of Al Pre-Deposition Layer on Crystalline Quality of GaN Grown on Si(111) Substrates.

Lee, Seung-Jae; Jeon, Seong-Ran; Ju, Jin-Woo; Baek, Jong Hyeob; Su, Jie; Lee, Soo Min; Lee, Dong S; Lee, Cheul-Ro.

Afiliação

Lee SJ; Korea Photonics Technology Institute, Gwangju 61007, Republic of Korea.
Jeon SR; Korea Photonics Technology Institute, Gwangju 61007, Republic of Korea.
Ju JW; Korea Photonics Technology Institute, Gwangju 61007, Republic of Korea.
Baek JH; Korea Photonics Technology Institute, Gwangju 61007, Republic of Korea.
Su J; Veeco Instruments Inc., Somerset, NJ 08873, USA.
Lee SM; Veeco Instruments Inc., Somerset, NJ 08873, USA.
Lee DS; QMAT, Inc., Santa Clara, CA 95051, USA.
Lee CR; School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Jeollabuk-do 54896, Republic of Korea.

J Nanosci Nanotechnol ; 19(2): 892-896, 2019 Feb 01.

Article em En | MEDLINE | ID: mdl-30360168

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article