A Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate.

Jing, Yumei; Huang, Shaoyun; Wu, Jinxiong; Meng, Mengmeng; Li, Xiaobo; Zhou, Yu; Peng, Hailin; Xu, Hongqi.

Afiliação

Jing Y; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China.
Huang S; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China.
Wu J; Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China.
Meng M; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China.
Li X; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China.
Zhou Y; School of Physics and Electronics, and Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Central South University, Changsha, 410083, China.
Peng H; Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China.
Xu H; Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China.

Adv Mater ; 31(42): e1903686, 2019 Oct.

Article em En | MEDLINE | ID: mdl-31489725