Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO<sub>2</sub> Memory.

Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO₂ Memory.

Heo, Kwan-Jun; Kim, Han-Sang; Lee, Jae-Yun; Kim, Sung-Jin.

Afiliação

Heo KJ; College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, 28644, Korea.
Kim HS; R&D center, SK hynix, 2091, Gyeongchung-daero, Bubal-eup, Icheon-si, Gyeonggi-do, 13558, Korea.
Lee JY; College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, 28644, Korea.
Kim SJ; College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, 28644, Korea.

Sci Rep ; 10(1): 9276, 2020 Jun 09.

Article em En | MEDLINE | ID: mdl-32518357

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article