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Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching.
Li, Yiyang; Fuller, Elliot J; Sugar, Joshua D; Yoo, Sangmin; Ashby, David S; Bennett, Christopher H; Horton, Robert D; Bartsch, Michael S; Marinella, Matthew J; Lu, Wei D; Talin, A Alec.
Afiliação
  • Li Y; Sandia National Laboratories, Livermore, CA, 94550, USA.
  • Fuller EJ; Sandia National Laboratories, Livermore, CA, 94550, USA.
  • Sugar JD; Sandia National Laboratories, Livermore, CA, 94550, USA.
  • Yoo S; Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA.
  • Ashby DS; Sandia National Laboratories, Livermore, CA, 94550, USA.
  • Bennett CH; Sandia National Laboratories, Albuquerque, NM, 87185, USA.
  • Horton RD; Sandia National Laboratories, Livermore, CA, 94550, USA.
  • Bartsch MS; Sandia National Laboratories, Livermore, CA, 94550, USA.
  • Marinella MJ; Sandia National Laboratories, Albuquerque, NM, 87185, USA.
  • Lu WD; Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA.
  • Talin AA; Sandia National Laboratories, Livermore, CA, 94550, USA.
Adv Mater ; 32(45): e2003984, 2020 Nov.
Article em En | MEDLINE | ID: mdl-32964602
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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2020 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2020 Tipo de documento: Article