Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon.
Opt Lett
; 45(19): 5468-5471, 2020 Oct 01.
Article
em En
| MEDLINE
| ID: mdl-33001927
ABSTRACT
High-power, broadband quantum-dot (QD) superluminescent diodes (SLDs) are ideal light sources for optical coherence tomography (OCT) imaging systems but have previously mainly been fabricated on native GaAs- or InP-based substrates. Recently, significant progress has been made to emigrate QD SLDs from native substrates to silicon substrates. Here, we demonstrate electrically pumped continuous-wave InAs QD SLDs monolithically grown on silicon substrates with significantly improved performance thanks to the achievement of a low density of defects in the III-V epilayers. The fabricated narrow-ridge-waveguide device exhibits a maximum 3 dB bandwidth of 103 nm emission spectrum centered at the O-band together with a maximum single facet output power of 3.8 mW at room temperature. The silicon-based SLD has been assessed for application in an OCT system. Under optimized conditions, a predicted axial resolution of â¼5.3µm is achieved with a corresponding output power of 0.66 mW/facet.
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MEDLINE
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2020
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Article