Self-inhibition effect of metal incorporation in nanoscaled semiconductors.

Zhu, Bin; Yi, Ding; Wang, Yuxi; Sun, Hongyu; Sha, Gang; Zheng, Gong; Garnett, Erik C; Tian, Bozhi; Ding, Feng; Zhu, Jia

Zhu, Bin; Yi, Ding; Wang, Yuxi; Sun, Hongyu; Sha, Gang; Zheng, Gong; Garnett, Erik C; Tian, Bozhi; Ding, Feng; Zhu, Jia.

Afiliação

Zhu B; National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China.
Yi D; Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, People's Republic of China.
Wang Y; Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea.
Sun H; Department of Physics, School of Science, Beijing Jiaotong University, Beijing 100044, People's Republic of China.
Sha G; National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China.
Zheng G; Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, People's Republic of China.
Garnett EC; Center for Nanophotonics, Fundamental Research on Matter Institute for Atomic and Molecular Physics (AMOLF), 1098 XG Amsterdam, The Netherlands.
Tian B; Herbert Gleiter Institute of Nanoscience, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China.
Ding F; Herbert Gleiter Institute of Nanoscience, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China.
Zhu J; Ministry of Industry and Information Technology (MIIT) Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China.