Effect of Hole Shift on Threshold Characteristics of GaSb-Based Double-Hole Photonic-Crystal Surface-Emitting Lasers.
Micromachines (Basel)
; 12(5)2021 Apr 21.
Article
em En
| MEDLINE
| ID: mdl-33919126
ABSTRACT
Photonic-crystal (PC) surface-emitting lasers (SELs) with double-hole structure in the square-lattice unit cell were fabricated on GaSb-based type-I InGaAsSb/AlGaAsSb heterostructures. The relative shift of two holes was varied within one half of the lattice period. We measured the lasing wavelengths and threshold pumping densities of 16 PC-SELs and investigated their dependence on the double-hole shift. The experimental results were compared to the simulated wavelengths and threshold gains of four band-edge modes. The measured lasing wavelength did not exhibit switching of band-edge mode; however, the calculated lowest threshold mode switched as the double-hole shift exceeded one quarter of the lattice period. The identification of band-edge lasing mode revealed that modal gain discrimination was dominated over by its mode wavelength separation.
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Base de dados:
MEDLINE
Tipo de estudo:
Prognostic_studies
Idioma:
En
Ano de publicação:
2021
Tipo de documento:
Article