Your browser doesn't support javascript.
loading
In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering.
Lee, J W; Eom, K; Paudel, T R; Wang, B; Lu, H; Huyan, H X; Lindemann, S; Ryu, S; Lee, H; Kim, T H; Yuan, Y; Zorn, J A; Lei, S; Gao, W P; Tybell, T; Gopalan, V; Pan, X Q; Gruverman, A; Chen, L Q; Tsymbal, E Y; Eom, C B.
Afiliação
  • Lee JW; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
  • Eom K; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
  • Paudel TR; Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA.
  • Wang B; Department of Physics, South Dakota School of Mines and Technology, Rapid City, SD, 57701, USA.
  • Lu H; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
  • Huyan HX; Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA.
  • Lindemann S; Department of Materials Science and Engineering, University of California, Irvine, CA, 92697, USA.
  • Ryu S; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
  • Lee H; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
  • Kim TH; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
  • Yuan Y; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
  • Zorn JA; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
  • Lei S; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
  • Gao WP; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
  • Tybell T; Department of Materials Science and Engineering, University of California, Irvine, CA, 92697, USA.
  • Gopalan V; Department of Electronic Systems, Norwegian University of Science and Technology, 7491, Trondheim, Norway.
  • Pan XQ; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
  • Gruverman A; Department of Materials Science and Engineering, University of California, Irvine, CA, 92697, USA.
  • Chen LQ; Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA.
  • Tsymbal EY; Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA.
  • Eom CB; Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA.
Nat Commun ; 12(1): 6784, 2021 Nov 22.
Article em En | MEDLINE | ID: mdl-34811372
ABSTRACT
The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO3 thin films. Theoretical calculations predict the key role of the BaTiO3/PrScO3 [Formula see text] substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article