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Influence of Isostatic Pressure on the Elastic and Electronic Properties of K2SiF6:Mn4.
Subhoni, Mekhrdod; Zafari, Umar; Ma, Chong-Geng; Srivastava, Alok M; Beers, William W; Cohen, William E; Brik, Mikhail G; Piasecki, Michal; Yamamoto, Tomoyuki.
Afiliação
  • Subhoni M; College of Sciences & CQUPT-BUL Innovation Institute, Chongqing University of Posts and Telecommunications, Chongqing 400065, China.
  • Zafari U; Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, Tokyo 169-0051, Japan.
  • Ma CG; Center of Innovative Development of Science and New Technologies, National Academy of Sciences of Tajikistan, Dushanbe 734025, Tajikistan.
  • Srivastava AM; Physical Technical Institute, National Academy of Sciences of Tajikistan, Dushanbe 734063, Tajikistan.
  • Beers WW; Center of Innovative Development of Science and New Technologies, National Academy of Sciences of Tajikistan, Dushanbe 734025, Tajikistan.
  • Cohen WE; College of Sciences & CQUPT-BUL Innovation Institute, Chongqing University of Posts and Telecommunications, Chongqing 400065, China.
  • Brik MG; Current Lighting Solutions LLC, 1099 Ivanhoe Road, Cleveland, OH 44110, USA.
  • Piasecki M; Current Lighting Solutions LLC, 1099 Ivanhoe Road, Cleveland, OH 44110, USA.
  • Yamamoto T; Current Lighting Solutions LLC, 1099 Ivanhoe Road, Cleveland, OH 44110, USA.
Materials (Basel) ; 15(2)2022 Jan 14.
Article em En | MEDLINE | ID: mdl-35057326
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article
Texto completo
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XML
PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article