Strain forces tuned the electronic and optical properties in GaTe/MoS<sub>2</sub> van der Waals heterostructures.

Strain forces tuned the electronic and optical properties in GaTe/MoS₂ van der Waals heterostructures.

Li, Yuan; Liu, Jijian; Zhao, Xiuwen; Yuan, Xingzhao; Hu, Guichao; Yuan, Xiaobo; Ren, Junfeng.

Afiliação

Li Y; School of Physics and Electronics, Shandong Normal University Jinan 250358 China yxb@sdnu.edu.cn renjf@sdnu.edu.cn.
Liu J; School of Physics and Electronics, Shandong Normal University Jinan 250358 China yxb@sdnu.edu.cn renjf@sdnu.edu.cn.
Zhao X; School of Physics and Electronics, Shandong Normal University Jinan 250358 China yxb@sdnu.edu.cn renjf@sdnu.edu.cn.
Yuan X; Shandong Management University Jinan 250376 China.
Hu G; School of Physics and Electronics, Shandong Normal University Jinan 250358 China yxb@sdnu.edu.cn renjf@sdnu.edu.cn.
Yuan X; School of Physics and Electronics, Shandong Normal University Jinan 250358 China yxb@sdnu.edu.cn renjf@sdnu.edu.cn.
Ren J; School of Physics and Electronics, Shandong Normal University Jinan 250358 China yxb@sdnu.edu.cn renjf@sdnu.edu.cn.

RSC Adv ; 10(42): 25136-25142, 2020 Jun 29.

Article em En | MEDLINE | ID: mdl-35517469

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article