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An Energy-Efficient BJT-Based Temperature Sensor with ±0.8 °C (3σ) Inaccuracy from -50 to 150 °C.
Qin, Chuyun; Huang, Zhenyan; Liu, Yuyan; Li, Jiping; Lin, Ling; Tan, Nianxiong; Yu, Xiaopeng.
Afiliação
  • Qin C; Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China.
  • Huang Z; Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China.
  • Liu Y; Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China.
  • Li J; Beijing Smartchip Microelectronics Technology Company Limited, Beijing 100192, China.
  • Lin L; Beijing Smartchip Microelectronics Technology Company Limited, Beijing 100192, China.
  • Tan N; Vango Technologies Inc., Hangzhou 310053, China.
  • Yu X; Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China.
Sensors (Basel) ; 22(23)2022 Dec 01.
Article em En | MEDLINE | ID: mdl-36502079
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Texto completo: 1 Base de dados: MEDLINE Assunto principal: Amplificadores Eletrônicos Idioma: En Ano de publicação: 2022 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Amplificadores Eletrônicos Idioma: En Ano de publicação: 2022 Tipo de documento: Article