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Probing charge redistribution at the interface of self-assembled cyclo-P5 pentamers on Ag(111).
Chahib, Outhmane; Yin, Yuling; Liu, Jung-Ching; Li, Chao; Glatzel, Thilo; Ding, Feng; Yuan, Qinghong; Meyer, Ernst; Pawlak, Rémy.
Afiliação
  • Chahib O; Department of Physics, University of Basel, Basel, Switzerland.
  • Yin Y; Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Shenzhen, People's Republic of China.
  • Liu JC; Faculty of Materials Science and Energy Engineering, Shenzhen University of Advanced Technology, Shenzhen, People's Republic of China.
  • Li C; Department of Physics, University of Basel, Basel, Switzerland.
  • Glatzel T; Department of Physics, University of Basel, Basel, Switzerland.
  • Ding F; Department of Physics, University of Basel, Basel, Switzerland.
  • Yuan Q; Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Shenzhen, People's Republic of China.
  • Meyer E; Faculty of Materials Science and Energy Engineering, Shenzhen University of Advanced Technology, Shenzhen, People's Republic of China.
  • Pawlak R; State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai, People's Republic of China.
Nat Commun ; 15(1): 6542, 2024 Aug 02.
Article em En | MEDLINE | ID: mdl-39095352
ABSTRACT
Phosphorus pentamers (cyclo-P5) are unstable in nature but can be synthesized at the Ag(111) surface. Unlike monolayer black phosphorous, little is known about their electronic properties when in contact with metal electrodes, although this is crucial for future applications. Here, we characterize the atomic structure of cyclo-P5 assembled on Ag(111) using atomic force microscopy with functionalized tips and density functional theory. Combining force and tunneling spectroscopy, we find that a strong charge transfer induces an inward dipole moment at the cyclo-P5/Ag interface as well as the formation of an interface state. We probe the image potential states by field-effect resonant tunneling and quantify the increase of the local change of work function of 0.46 eV at the cyclo-P5 assembly. Our experimental approach suggest that the cyclo-P5/Ag interface has the characteristic ingredients of a p-type semiconductor-metal Schottky junction with potential applications in field-effect transistors, diodes, or solar cells.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article