SEMICONDUCTOR SHORTAGE AND INDIAN AUTOMOBILE SECTOR: EMPIRICAL ANALYSIS

The semiconductor shortage has had a signi?cant impact on the automobile sector in India. Semiconductors are a vital component in the production of vehicles, and the shortage has resulted in production delays and reduced output for many automobile manufacturers in India. This research paper examines the impact of the current semiconductor shortage on the automotive industry. The research paper begins by exploring the causes of the shortage, including the global shift towards digitalization, the pandemic-induced surge in demand for technology products, and the limited production capacity of semiconductor manufacturers. The paper then examines the economic effects of the shortage, including reduced revenues, increased costs, and reduced supply. It further explores the strategies adopted by automotive manufacturers to mitigate the impact of the shortage, such as increasing production and increasing their investments in semiconductor manufacturers. Finally, the paper discusses the implications of the shortage and suggests effective solutions to address the crisis. A simulation is carried out to forecast the strength of manufacturing in India. The ?ndings of this research indicate that the current semiconductor shortage is having a signi?cant impact on the automotive industry, and that appropriate strategies should be adopted to address the crisis.

Background and Activities of the Samsung Ombudsperson Commission in Korea / 예방의학회지

OBJECTIVES: The Samsung Ombudsperson Commission was launched as an independent third-party institution following an agreement among Samsung Electronics, Supporters for Health and Right of People in Semiconductor Industry (Banolim in Korean, an independent NGO), and the Family Compensation Committee, in accordance with the industry accident prevention measure required by the settlement committee to address the issues related to employees who allegedly died from leukemia and other diseases as a result of working at Samsung's semiconductor production facilities. METHODS: The Commission has carried out a comprehensive range of activities to review and evaluate the status of the company's occupational accidents management system, as well as occupational safety and health risk management within its facilities. RESULTS: Based on the results of this review, termed a comprehensive diagnosis, the Commission presented action plans for improvement to strengthen the company's existing safety and health management system and to effectively address uncertain risks in this area going forward. CONCLUSIONS: The Commission will monitor the execution of the suggested tasks and provide advice and guidance to ensure that Samsung's semiconductor and liquid crystal display production lines are safer.

Attractiveness of light-emitting diodes (LEDs) of different wavelengths to the South American rice water weevil / Atratividade de diodos emissores de luz (LEDs) de diferentes comprimentos de onda aos adultos da bicheira-da-raiz

The South American rice water weevil Oryzophagus oryzae (Costa Lima) (Coleoptera: Curculionidae) is a key pest of irrigated rice in Brazil. Light traps could be used as an integrated pest management (IPM) strategy since these weevils have strong phototropism. Thus, the aim of this study was to search the attractiveness of LEDs of different wavelengths to O. oryzae to define the best light-emitting diodes (LED) arrangement to build the lamp of photovoltaic light traps. LEDs of different wavelengths were tested in a dark room with a hexagonal arena with exits to light sources. Groups of 200 insects were released in the center of the arena and captured at the end of exposure time in plastic bags placed in the exits. The LEDs in the short-wave band of the light spectrum (365 and 460 nm) and white LEDs, as well as the light mix of 365 with 460 nm or white LEDs, were attractive to O. oryzae. Beyond the LEDs with ultraviolet (UV) spectrum, the LEDs above 380 nm were the most attractive and, this way, might be used to build LED lamps of photovoltaic light traps.(AU)

Uma das pragas-chave do arroz irrigado é a bicheira-da-raiz, denominação comum atribuída às larvas do gorgulho aquático Oryzophagus oryzae (Costa Lima) (Coleoptera: Curculionidae). A utilização de armadilhas luminosas poderia ser uma alternativa viável no manejo integrado, pois esse gorgulho apresenta elevado fototropismo positivo. Assim, objetivou-se determinar a atratividade de diodos emissores de luz (LEDs) de diferentes comprimentos de onda ao O. oryzae e definir o seu melhor arranjo para compor a lâmpada de armadilhas luminosas fotovoltaicas. LEDs de diferentes comprimentos de onda foram testados em sala escura, em uma arena hexagonal com saídas para as fontes de luz. Grupos de 200 indivíduos foram liberados no centro da arena e capturados em sacos plásticos nas saídas ao fim do tempo de exposição. Os LEDs da faixa do espectro luminoso de ondas curtas (365 e 460 nm) e LEDs brancos, bem como as misturas de luzes de LEDs 365 com 460 nm ou branco, foram atrativos ao O. oryzae. Entre os LEDs com espectro ultravioleta, os mais atrativos foram aqueles acima de 380 nm, devendo estes compor, prioritariamente, lâmpadas de LED para uso nas armadilhas luminosas fotovoltaicas.(AU)

Myocardial perfusion imaging evaluation of left ventricular volume and ejection fraction using a novel semi-conductor SPECT: comparison to conventional SPECT and cardiac MRI / 中华核医学与分子影像杂志

Objective To prospectively compare cadmium-zinc-telluride (CZT) SPECT gated myocardial perfusion imaging (GMPI),conventional SPECT MPI and cardiac MRI for the assessment of left ventricular volume and ejection fraction in patients with heart failure.Methods From July 2016 to October 2016,a total of 35 patients (27 males,8 females,average age:(52.7±14.9) years) with heart failure were consecutively included.All patients underwent CZT SPECT GMPI,conventional SPECT GMPI and cardiac MRI within 7 d.LVEDV,LVESV and LVEF of three imaging modalities were calculated.One-way analysis of variance,Pearson correlation analysis and Bland-Altman analysis were used.Results CZT SPECT showed excellent correlation with conventional SPECT for LVEDV,LVESV and LVEF (r values:0.983,0.986 and 0.910,respectively;all P＜0.001).Bland-Altman analysis revealed good agreement between CZT SPECT and conventional SPECT for LVEDV,LVESV and LVEF.The correlation between CZT SPECT and cardiac MRI for LVEDV,LVESV and LVEF were all significant (r values:0.864,0.896 and 0.836,respectively;all P＜0.001).Compared with cardiac MRI,CZT SPECT showed systemic underestimation of LVEDV and LVESV and good agreement of LVEF by Bland-Altman analysis.Conclusions CZT SPECT has high clinical value for patients with heart failure.Despite underestimating LVEDV and LVESV,it correlated well with cardiac MRI.It also has a good agreement with conventional SPECT on left ventricular volume and LVEF.

Insight of ZnS nanoparticles contribution in different biological uses

Objectives To evaluate the contributions of the some quantum dots in different biological uses in order to valorizes such nanomaterials for further applications. Methods Zinc sulfide ZnS nanoparticles were synthesized in aqueous medium at pH constant, the obtained nanoparticles has been characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and Fourier Transform Infra-red (FTIR) spectroscopies. Zinc sulfide nanoparticles were screened for their antibacterial and antifungal profiling and tested for antioxidant activity using 1,1-diphenyl-2-picrylhydrazyl (DPPH), hydroxyl radical (OH

Insight of ZnS nanoparticles contribution in different biological uses

OBJECTIVES@#To evaluate the contributions of the some quantum dots in different biological uses in order to valorizes such nanomaterials for further applications.@*METHODS@#Zinc sulfide ZnS nanoparticles were synthesized in aqueous medium at pH constant, the obtained nanoparticles has been characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and Fourier Transform Infra-red (FTIR) spectroscopies. Zinc sulfide nanoparticles were screened for their antibacterial and antifungal profiling and tested for antioxidant activity using 1,1-diphenyl-2-picrylhydrazyl (DPPH), hydroxyl radical (OH) and hydrogen peroxide (H2O2) scavenging activity, ferric reducing power (FRP) assay and ferrous ion chelating (FIC) methods.@*RESULTS@#The sizes of the crystallites were estimated to 3 nm using the Debye-Scherrer formula based on the XRD data. The shape was identified to be quasi-spherical with agglomerated particles. The obtained ZnS quantum dots present an antioxidant activity especially in oxido-reduction power, and can be used for species profiling either for bacteria and fungus.@*CONCLUSION@#It was found that ZnS nanoparticles showed relatively higher antioxidant activities and antibacterial with an antifungal behavior which proves that this nanomaterials can react at the interface with the life entities.

Procesos hopping a través del modelo difusional en materiales nanocristalinos usados para aplicaciones fotovoltaicas / Hopping processes in nanocrystalline materials used for photovoltaic applications using a diffusion model / Processos Hopping através do modelo de difusão em materiais nanocristalinos utilizados para aplicações fotovoltaicas

Se presentan los modelos de hopping de rango variable (variable range hopping; VRH), vecinos cercanos (nearest neighbor hopping; NNH) y barreras de potencial presentes en las fronteras de grano; como mecanismos de transporte eléctrico predominantes en los materiales semiconductores para aplicaciones fotovoltaicas. Las medidas de conductividad a oscuras en función de temperatura fueron realizadas para región de bajas temperaturas entre 120 y 400 K con Si y compuestos Cu3BiS2 y Cu2ZnSnSe4. Siguiendo la teoría de percolación, se obtuvieron parámetros hopping y la densidad de estados cerca del nivel de Fermi, N(E F), para todas las muestras. A partir de los planteamientos dados por Mott para VRH, se presentó el modelo difusional, que permitió establecer la relación entre la conductividad y la densidad de estados de defecto o estados localizados en el gap del material. El análisis comparativo entre modelos, evidenció, que es posible obtener mejora hasta de un orden de magnitud en valores para cada uno de los parámetros hopping que caracterizan el material.

Here, we present variable range hopping (VRH) models, nearest neighbor hopping (NNH) and potential barriers present at the grain boundaries, as well as mechanisms of electrical transport predominant in semiconductor materials for photovoltaic applications. We performed dark conductivity measures according to temperature for low temperature regions between 120 and 400 K in Si and Cu3BiS2 and Cu2ZnSnSe4 compounds. Using the percolation theory, we obtained hopping parameters and the density of states near the Fermi, N(E F) level for all samples. Using the approach by Mott for VRH, we obtained the diffusion model, which established the relationship between conductivity and density of defect states or localized gap states of the material. The comparative analysis between models evidenced that it is possible to obtain improvement of an order of magnitude in the values of each of the hopping parameters that characterize the material.

Apresentam-se os modelos de hopping de categoria variável (variable range hopping; VRH), vizinhos próximos (nearest neighbor hopping, NNH) e barreiras de potenciais presentes nas fronteiras de grãos; como mecanismo de transporte elétrico predominantes nos materiais semicondutores para aplicações fotovoltaicas. As medidas de condutividade no escuro em função da temperatura foram realizadas para região de baixas temperaturas entre 120 e 400 K com Si e compostos Cu3BiS2 e Cu2ZnSnSe4. Seguindo a teoria da percolação obtiveram-se parâmetros hopping e a densidade de estados próximos do nível Fermi[BO1] N(E F) para toda a amostra. A partir das abordagens seguidas por Mott para VRH, apresentou-se o modelo de difusão, que permitiu estabelecer a relação entre a condutividade e a densidade de estados de defeito ou estados localizados no gap do material. A análise comparativa dos modelos mostrou que é possível obter melhoria até de uma amplitude de magnitude em valores para cada um dos parâmetros hopping que caracterizam o material.

Conducción hopping en películas nanocristalinas del compuesto CZTSe usado como capa absorbente en celdas solares / Hopping conduction in nanocrystalline composite films of CZTSe used as solar cell absorber layer / Condução hopping em películas nano-cristalinas do composto CZTSe utilizado como capa absorvente em painéis solares

Se presentan propiedades eléctricas y de transporte en películas nanocristalinas del compuesto cuaternario Cu2ZnSnSe4 (CZTSe) por método de co-evaporación física. Las muestras fueron crecidas sobre sustratos de vidrio soda-lime y variando en rango los parámetros de síntesis: masa de Cu y temperatura de sustrato. A partir de termopotencia a temperatura ambiente y de transmitancia espectral, se encontró que el material está caracterizado por conductividad tipo n y ancho de banda de energía prohibida de 1.7 eV, respectivamente. Las medias de conductividad eléctrica (región de bajas temperaturas; 90-200 K) mostraron que los procesos de conducción se realizan vía hopping de rango de variable entre estados extendidos. Los parámetros que caracterizaron éste mecanismo, energía de activación (Whopp) y rango hopping (Rhopp), fueron obtenidos mediante teoría de percolación y modelo difusional. Se obtuvo, que para las muestras CZTSe la densidad de estados de defecto cerca del nivel de Fermi del material, N(Ef), está alrededor de 3,403x10(18) cm-3 eV-1. Se presentó correlación entre parámetros de depósito y propiedades eléctricas. Se observó influencia de parámetros sobre formación de fases adicionales en el compuesto.

Here, we present electronic and transport properties of quaternary Cu2ZnSnSe4 (CZTSe) nanocrystalline films fabricated by physical co-evaporation. The samples were grown on soda-lime glass substrates and synthesis parameter ranges, Cu mass and substrate temperature were varied. Using thermopower at room temperature and spectral transmittance we found that the material is characterized by n-type conductivity and forbidden energy bandwidth of 1.7 eV, respectively. Electrical conductivity means (low temperature region; 90-200 K) showed that conductivity processes occur via variable range hopping between extended states. We obtained the parameters characterizing this mechanism, activation energy (Whopp), and range hopping (Rhopp), by employing the percolation theory and diffusion model. The density of defect states near the Fermi level of the material, N (Ef) of the CZTSe samples is about 3,403x10(18) cm-3 eV-1. We found a correlation between deposition parameters and electrical properties and observed a parameter influence on the formation of additional phases in the compound.

Apresentam-se propriedades elétricas e de transporte em películas nano-cristalinas do composto quaternário Cu2ZnSnSe4 (CZTSe) pelo método de co-evaporação física. As amostras foram crescidas sobre substratos de vidro soda-lime e variando a amplitude dos parâmetros de síntese: massa de Cu e temperatura do substrato. A partir de termo-potência a temperatura ambiente e de transmissão espectral, encontrou-se que o material está caracterizado pela condutividade tipo n e largura de banda de energia proibida de 1.7 eV, respetivamente. As medidas de condutividade elétrica (regiões de baixas temperaturas; 90-200 K) mostraram que os processos de condução se realizam via hopping de amplitude variável entre estados estendidos. Os parâmetros que caracterizaram este mecanismo, energia de ativação (Whopp) e amplitude hopping (Rhopp), foram obtidos mediante a teoria de percolação e o modelo de difusão. Obteve-se que, para as amostras CZTSe, a densidade de estados de defeito próximos do nível de Fermi do material, N(EF), está ao redor de, 3,403x10(18) cm-3 eV-1. Apresentou-se correlação entre parâmetros de depósito e propriedades elétricas. Observou-se influencia de parâmetros sobre a formação de fases no composto.

Cancer Mortality and Incidence in Korean Semiconductor Workers

OBJECTIVES: The purpose of this study was to evaluate cancer risks in the Korean semiconductor industry. METHODS: A retrospective cohort study was performed in eight semiconductor factories between 1998 and 2008. The number of subjects was 113,443 for mortality and 108,443 for incidence. Standardized mortality ratios (SMR) and standardized incidence ratios (SIR) were calculated. RESULTS: The SMR of leukemia was 0.39 (95% Confidence Interval 0.08-1.14) in males (2 cases) and 1.37 (0.55-2.81) in females (7 cases). The SMR of non-Hodgkin's lymphoma (NHL) was 1.33 (0.43-3.09, 5 cases) in males and 2.5 (0.68-6.40, 4 cases) in females. The SIR of leukemia was 0.69 (0.30-1.37, 8 cases) in males and 1.28 (0.61-2.36, 10 cases) in females. The SIR of NHL in females was 2.31 (1.23-3.95, 13 cases) and that of thyroid cancer in males was 2.11 (1.49-2.89, 38 cases). The excess incidence of NHL was significant in female assembly operators [SIR=3.15 (1.02-7.36, 5 cases)], but not significant in fabrication workers. The SIR of NHL in the group working for 1-5 years was higher than the SIR of NHL for those working for more than five years. The excess incidence of male thyroid cancer was observed in both office and manufacturing workers. CONCLUSION: There was no significant increase of leukemia in the Korean semiconductor industry. However, the incidence of NHL in females and thyroid cancer in males were significantly increased even though there was no definite association between work and those diseases in subgroup analysis according to work duration. This result should be interpreted cautiously, because the majority of the cohort was young and the number of cases was small.

Cases Series of Malignant Lymphohematopoietic Disorder in Korean Semiconductor Industry

OBJECTIVES: Seven cases of malignant lymphohematopoietic (LHP) disorder were claimed to have developed from occupational exposure at two plants of a semiconductor company from 2007 to 2010. This study evaluated the possibility of exposure to carcinogenic agents for the cases. METHODS: Clinical courses were reviewed with assessing possible exposure to carcinogenic agents related to LHP cancers. Chemicals used at six major semiconductor companies in Korea were reviewed. Airborne monitoring for chemicals, including benzene, was conducted and the ionizing radiation dose was measured from 2008 to 2010. RESULTS: The latency of seven cases (five leukemiae, a Non-Hodgkin's lymphoma, and an aplastic anemia) ranged from 16 months to 15 years and 5 months. Most chemical measurements were at levels of less than 10% of the Korean Occupational Exposure Limit value. No carcinogens related to LHP cancers were used or detected. Complete-shielded radiation-generating devices were used, but the ionizing radiation doses were 0.20-0.22 uSv/hr (background level: 0.21 microSv/hr). Airborne benzene was detected at 0.31 ppb when the detection limit was lowered as low as possible. Ethylene oxide and formaldehyde were not found in the cases' processes, while these two were determined to be among the 263 chemicals in the list that was used at the six semiconductor companies at levels lower than 0.1%. Exposures occurring before 2002 could not be assessed because of the lack of information. CONCLUSION: Considering the possibility of exposure to carcinogenic agents, we could not find any convincing evidence for occupational exposure in all investigated cases. However, further study is needed because the semiconductor industry is a newly developing one.

Analysis of the current-voltage characteristics of polymer-based organic light-emitting diodes (OLEDs) deposited by spin coating / Análisis de la característica corriente-voltaje de diodos orgánicos emisores de luz (OLEDs) basados en polímeros depositados por spin coating / Análise da característica corrente-voltagem de diodos orgânicos emissores de luz (OLEDs) baseados em polímeros depositados por spin coating

Polymer-based organic light-emitting diodes (OLEDs) with the structure ITO / PEDOT:PSS / MDMO-PPV / Metal were prepared by spin coating. It is known that electroluminescence of these devices is strongly dependent on the material used as cathode and on the deposition parameters of the polymer electroluminescent layer MDMO-PPV. Objective. In this work the effect of i) the frequency of the spin coater (1000-8000 rpm), ii) the concentration of the MDMO-PPV: Toluene solution, and iii) the material used as cathode (Aluminium or Silver) on the electrical response of the devices, was evaluated through current-voltage (I-V) measurements. Materials and methods. PEDOT:PPS and MDMO-PPV organic layers were deposited by spin coating on ITO substrates, and the OLED structure was completed with cathodes of aluminium and silver. The electric response of the devices was evaluated based on the I-V characteristics. Results. Diodes prepared with thinner organic films allow higher currents at lower voltages; this can be achieved either by increasing the frequency of the spin coater or by using concentrations of MDMO-PPV: Toluene lower than 2% weight. A fit of the experimental data showed that the diodes have two contributions to the current. The first one is attributed to parasitic currents between anode and cathode, and the other one is a parallel current through the organic layer, in which the carrier injection mechanism is mediated by thermionic emission. Conclusions. The results of the fitting and the energy level alignment through the whole structure show that PPV-based OLEDs are unipolar devices, with current mainly attributed to hole transport.

Se fabricaron diodos orgánicos emisores de luz (OLEDs) con la estructura ITO / PEDOT:PSS / MDMO-PPV / Metal mediante la técnica de spin coating. Es ampliamente conocido que la electroluminiscencia de estos diodos depende fuertemente del material usado como cátodo y también de los parámetros de crecimiento de la capa del polímero electroluminiscente MDMO-PPV. Objetivo. En este trabajo el efecto de i) la frecuencia del spin coater (1000-8000 rpm), ii) la concentración de la solución MDMO-PPV: Tolueno y iii) el material usado como cátodo (plata o aluminio) sobre la repuesta eléctrica de los dispositivos, fue evaluado a través de medidas de corriente-voltaje (I-V). Materiales y métodos. Películas delgadas de los materiales orgánicos PEDOT:PSS y MDMO-PPV fueron depositados por spin coating sobre sustratos de ITO, y la estructura del OLED fue terminada con cátodo de plata y aluminio. La respuesta eléctrica de los dispositivos fue evaluada a través de su característica I-V. Resultados. Los diodos fabricados con películas orgánicas más delgadas son los que suministran mayores corrientes a menores voltajes. Esto puede lograrse ya sea incrementando la frecuencia de rotación del spin coating o usando concentraciones de MDMO-PPV: Tolueno menores al 2% en peso. Un ajuste de los datos experimentales demostró que los diodos poseen contribuciones de una corriente parásita entre ánodo y cátodo, y otra corriente paralela en donde el mecanismo predominante de inyección de portadores a la capa orgánica es a través de emisión termoiónica. Conclusiones. El ajuste de los datos experimentales, junto con la posición de niveles de energía a través de la heteroestructura, demuestra que los OLEDs basados en derivados de PPV son dispositivos unipolares, en el que la corriente se atribuye principalmente a transporte de huecos.

Foram fabricados diodos orgânicos emissores de luz (OLEDs) com a estrutura de ITO / PEDOT: PSS / MDMO-PPV / metal, pela técnica de spin coating. É amplamente conhecido que a eletroluminescência destes diodos depende fortemente do material utilizado como cátodo, e também dos parâmetros de crescimento da camada de polímero eletroluminescente MDMO-PPV. Objetivo. Neste trabalho o efeito de i) a freqüência do spin coater (1000-8000 rpm), ii) a concentração da solução MDMO-PPV: Tolueno e iii) o material utilizado como cátodo (prata ou alumínio) sobre a resposta elétrica dos dispositivos, foi avaliado por medidas de corrente-voltagem (I-V). Materiais e métodos. Películas finas de materiais orgânicos PEDOT: PSS e MDMO-PPV foram depositadas por spin coating sobre substratos de ITO e a estrutura do OLED foi terminada com cátodo de prata e de alumínio. A resposta elétrica dos dispositivos foi avaliada pela sua característica I-V. Resultados. Os diodos feitos de películas orgânicas finas fornecem maiores correntes a menores voltagens. Isto pode ser conseguido, quer através do aumento da velocidade de rotação do spin coating ou usando concentrações de MDMO-PPV: Tolueno menores de 2% em peso. Um ajuste dos dados experimentais mostrou que os diodos têm uma contribuição de uma corrente parasita entre anodo e catodo, e outra corrente paralela, onde o principal mecanismo da injeção de portadores da camada orgânica é através da emissão termiônica. Conclusões. O ajuste dos dados experimentais, juntamente com a posição dos níveis de energia através da heteroestrutura, mostra que os OLEDs baseados em derivados de PPV são dispositivos unipolares, onde a corrente é atribuída principalmente ao transporte de ocos.

Effects of semiconductor laser on proliferation of multidrug-resistant model of human osteosarcoma cell line(R-OS-732) / 吉林大学学报(医学版)

Objective To explore the effects of semiconductor laser on proliferation of the multidrug-resistant model of human osteosarcoma cell line(ROS-732).Methods Four test groups and one control group were set up.The test groups were divided into A,B,C and D groups according to the irradiation time(output power was 200 mW).The time of laser irradiation of A,B,C and D groups were 5,10,20 and 40 min,repectively.The control group(E) wasn′t treated with laser irradiation.MTT method was used to observe the proliferation of R-OS-732,and the morphological changes of the cells were observed by inverted microscope.Results The survival rates of cells in all test groups under condition of semiconductor laser irradiation with 200 mW output power and 532 nm weavlength,compared with control group(P