Effect of flash lamp annealing and laser spike annealing on random dopant fluctuation of 15-nm metal-oxide-semiconductor devices.

Comparison of two different implantation processing techniques for random dopant (RD)-induced threshold voltage fluctuation (sigmaV(th)) in 15-nm metal-oxide-semiconductor (MOS) devices is reported. Implantations of flash lamp annealing and laser spike annealing are simulated using a kinetic Monte Carlo (KMC) technique. The KMC generated distributions are mapped into device channel for three-dimensional quantum mechanical transport simulation to estimate threshold voltage fluctuation. The main results of this study show that the laser spike annealing could achieve 30% reduction of RDF-induced sigmaV(th) for low-power application of 15-nm MOS devices, compared with flash lamp annealing.