Sharp selective scattering of red, green, and blue light achieved via gain material's loss compensation.

Frequency-selective scattering of light can be achieved by metallic nanoparticle's localized surface plasmon resonance (LSPR). And this property may find an application in a transparent projection screen: ideally, specially designed metallic nanoparticles dispersed in a transparent matrix only selectively scatter red, green and blue light and transmit the visible light of other colors. However, optical absorption and surface dispersion of a metallic nanoparticle, whose size is comparable or smaller than mean free path of electrons in the constituent material, degenerate the desired performance by broadening the resonance peak width (i.e., decreasing frequency-selectivity) and decreasing light scattering intensity. In this work, it is shown that the problem can be solved by introducing gain material. Numerical simulations are performed on nanostructures based on silver (Ag), gold (Au) or aluminum (Al) with or without gain material, to examine the effect of gain material and to search for suitable structures for sharp selective scattering of red, green and blue light. And it is found that introducing gain material greatly improves performance of the structures based on Ag or Au except the structures based on Al. The most suitable structures for sharp selective scattering of red, green and blue light are, respectively, found to be the core-shell structures of silica/Au (core/shell), silica/Ag and Ag/silica, all with gain material.

A MoS2-based coplanar neuron transistor for logic applications.

The human brain is an extremely complex system of 1010-1011 neurons. To construct brain-like neuromorphic hardware, the neuron unit should be implemented effectively. Here, we report a neuron transistor based on a MoS2 flake, which has summation and threshold functions similar to biological neurons and may act as a basic neuron unit in neuromorphic hardware. The neuron transistor is composed of a floating gate and two control gates. A heavily doped silicon substrate serves as the floating gate, while the two control gates are capacitively coupled with the floating gate. The neuron transistor can be well controlled by the two control gates individually or simultaneously. The drain current can be modulated by the input voltages at the control gates. While the current response of the neuron transistor has a large dependence on the magnitude of the input signal, it shows little dependence on the frequency of the input signal. To demonstrate the potential neuromorphic application of the neuron transistor, functions including abacus-like function, AND logic and OR logic are realized in the neuron transistor.

Highly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure.

Ultraviolet photodetector with p-n heterojunction is fabricated by magnetron sputtering deposition of n-type indium gallium zinc oxide (n-IGZO) and p-type nickel oxide (p-NiO) thin films on ITO glass. The performance of the photodetector is largely affected by the conductivity of the p-NiO thin film, which can be controlled by varying the oxygen partial pressure during the deposition of the p-NiO thin film. A highly spectrum-selective ultraviolet photodetector has been achieved with the p-NiO layer with a high conductivity. The results can be explained in terms of the "optically-filtering" function of the NiO layer.

Evolution of dielectric function of Al-doped ZnO thin films with thermal annealing: effect of band gap expansion and free-electron absorption.

Evolution of dielectric function of Al-doped ZnO (AZO) thin films with annealing temperature is observed. It is shown that the evolution is due to the changes in both the band gap and the free-electron absorption as a result of the change of free-electron concentration of the AZO thin films. The change of the electron concentration could be attributed to the activation of Al dopant and the creation/annihilation of the donor-like defects like oxygen vacancy in the thin films caused by annealing.

Influence of localized surface plasmon resonance and free electrons on the optical properties of ultrathin Au films: a study of the aggregation effect.

The contributions of localized surface plasmon resonance (LSPR) and Drude (free electrons) absorption to the complex dielectric function of ultrathin Au films were investigated with spectroscopic ellipsometry. When the Au film thickness is thinner than ~10 nm, Au nanoparticles (NPs) are formed as a result of the discontinuity in the films, leading to the emergence of LSPR of Au NPs; and the LSPR exhibits a splitting when the films thinner than ~8 nm, which could be attributed to the near-field coupling of the Au NPs and/or the inhomogeneous polarizations of the Au NPs. On the other hand, the delocalization of electrons in Au NPs due to the aggregation of Au NPs in a thicker film leads to an increase in the free-electron absorption and a suppression of the LSPR.

Effects of free electrons and quantum confinement in ultrathin ZnO films: a comparison between undoped and Al-doped ZnO.

Band gaps and exciton binding energies of undoped and Al-doped ZnO thin films were determined from optical absorption measurement based on the Elliott's exciton absorption theory. As compared to the undoped films, the doped films exhibit a band gap expansion and a reduction in the exciton binding energies due to the free electron screening effect, which suppresses the excitonic absorption and results in a blue shift of the absorption edge. The undoped and doped films show the same quantum size dependence, i.e. both the exciton binding energies and band gap energies increase with decreasing grain size of the oxides.

An Area- and Energy-Efficient Spiking Neural Network With Spike-Time-Dependent Plasticity Realized With SRAM Processing-in-Memory Macro and On-Chip Unsupervised Learning.

In this article, we present a spiking neural network (SNN) based on both SRAM processing-in-memory (PIM) macro and on-chip unsupervised learning with Spike-Time-Dependent Plasticity (STDP). Co-design of algorithm and hardware for hardware-friendly SNN and efficient STDP-based learning methodology is used to improve area and energy efficiency. The proposed macro utilizes charge sharing of capacitors to perform fully parallel Reconfigurable Multi-bit PIM Multiply-Accumulate (RMPMA) operations. A thermometer-coded Programmable High-precision PIM Threshold Generator (PHPTG) is designed to achieve low differential non-linearity (DNL) and high linearity. In the macro, each column of PIM cells and a comparator act as a neuron to accumulate membrane potential and fire spikes. A simplified Winner Takes All (WTA) mechanism is used in the proposed hardware-friendly architecture. By combining the hardware-friendly STDP algorithm as well as the parallel Word Lines (WLs) and Processing Bit Lines (PBLs), we realize unsupervised learning and recognize the Modified National Institute of Standards and Technology (MNIST) dataset. The chip for the hardware implementation was fabricated with a 55 nm CMOS process. The measurement shows that the chip achieves a learning efficiency of 0.47 nJ/pixel, with a learning energy efficiency of 70.38 TOPS/W. This work paves a pathway for the on-chip learning algorithm in PIM with lower power consumption and fewer hardware resources.

Braille recognition by E-skin system based on binary memristive neural network.

Braille system is widely used worldwide for communication by visually impaired people. However, there are still some visually impaired people who are unable to learn Braille system due to various factors, such as the age (too young or too old), brain damage, etc. A wearable and low-cost Braille recognition system may substantially help these people recognize Braille or assist them in Braille learning. In this work, we fabricated polydimethylsiloxane (PDMS)-based flexible pressure sensors to construct an electronic skin (E-skin) for the application of Braille recognition. The E-skin mimics human touch sensing function for collecting Braille information. Braille recognition is realized with a neural network based on memristors. We utilize a binary neural network algorithm with only two bias layers and three fully connected layers. Such neural network design remarkably reduces the calculation burden and, thus, the system cost. Experiments show that the system can achieve a recognition accuracy of up to 91.25%. This work demonstrates the possibility of realizing a wearable and low-cost Braille recognition system and a Braille learning-assistance system.

A dynamic AES cryptosystem based on memristive neural network.

This paper proposes an advanced encryption standard (AES) cryptosystem based on memristive neural network. A memristive chaotic neural network is constructed by using the nonlinear characteristics of a memristor. A chaotic sequence, which is sensitive to initial values and has good random characteristics, is used as the initial key of AES grouping to realize "one-time-one-secret" dynamic encryption. In addition, the Rivest-Shamir-Adleman (RSA) algorithm is applied to encrypt the initial values of the parameters of the memristive neural network. The results show that the proposed algorithm has higher security, a larger key space and stronger robustness than conventional AES. The proposed algorithm can effectively resist initial key-fixed and exhaustive attacks. Furthermore, the impact of device variability on the memristive neural network is analyzed, and a circuit architecture is proposed.

Laterally-current-injected light-emitting diodes based on nanocrystalline-Si/SiO2 superlattice.

Laterally electrically-pumped Si light-emitting diodes (LEDs) based on truncated nanocrystalline-Si (nc-Si)/SiO2 quantum wells are fabricated with complementary-metal-semiconductor-oxide (CMOS) process. Visible electroluminescence (EL) can be observed under a reverse bias larger than ~6 V. The light emission would probably originate from the spontaneous hot-carrier relaxations within the conduction and the valance bands when the device is sufficiently reverse-biased. The EL spectral profile is found to be modulated by varying structure parameters of the interdigitated finger electrodes. Up to ~20 times EL intensity enhancement is achieved as compared to vertical-current-injection LED prepared using the same material system. Based on the lateral-current-injection scheme, a Si/SiO2 MQW LED with Fabry-Perot (FP) microcavity and an on-chip waveguided LED that emits at 1.55-µm are proposed.

Split of surface plasmon resonance of gold nanoparticles on silicon substrate: a study of dielectric functions.

The split of surface plasmon resonance of self-assembled gold nanoparticles on Si substrate is observed from the dielectric functions of the nanoparticles. The split plasmon resonances are modeled with two Lorentz oscillators: one oscillator at ~1 eV models the polarization parallel to the substrate while the other at ~2 eV represents the polarization perpendicular to the substrate. Both parallel and perpendicular resonances are red-shifted when the nanoparticle size increases. The red shifts in both resonances are explained by the image charge effect of the Si substrate.

Electroluminescence from n-In2O3:Sn randomly assembled nanorods/p-SiC heterojunction.

Room-temperature electroluminescence (EL) has been realized from Sn-doped In(2)O(3) (In(2)O(3):Sn) nanorods. Heterojunction light-emitting diode (LED) was formed by depositing a layer of randomly packed n-In(2)O(3):Sn nanorods onto a p-type 4H-SiC substrate. It is found that the emission intensity of the heterojunction LED under forward bias can be maximized by doping the In(2)O(3) nanorods with 3 mol. % of Sn. Furthermore, two emission peaks of the EL spectra are observed at approximately 395 and approximately 440 nm. These ultraviolet and visible peaks are attributed to the radiative recombination at Sn induced and intrinsic defect states of the In(2)O(3):Sn nanorods.

Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film.

Visible electroluminescence (EL) with two composite bands, i.e., a violet band and a green-yellow band has been observed from Si-implanted silicon nitride thin films. By varying the intensity ratio of the two composite EL bands in terms of the injection current, strong white-color EL can be achieved at certain injection currents (e.g., ~265 mA/cm(2)). The observed transition in EL color from violet to white under different injection conditions is studied based on the understanding that the violet band is originated from silicon nitride matrix while the green-yellow band is related to the implanted Si. The Si-implanted silicon nitride thin film offers the possibility of electrically tunable white-light Si-based light emitters.

Profile uniformity of overlapped oxide dots induced by atomic force microscopy.

The technique for assembling a uniform oxide line by overlapping a series of nanosized oxide dots induced by atomic force microscopy is analytically and experimentally investigated. In addition to the normal continuous (static) pulses, the oxide growth rates under various discontinuous (modulated) pluses are studied to quantify the overlapping effect under multiple pulses used by the assembling technique. In the analysis of the assembling technique, the superposition principle is used to predict the assembled profiles and to define the uniformity criteria. Experiments have been performed to demonstrate the analytical prediction, including the threshold or minimum pitch for forming uniform lines, and the onset pitch for the overlapping effect to be considered. Indeed, by following the uniformity criteria developed, uniform and reliable oxide lines can be obtained by overlapping oxide dots.

A two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing Al nanocrystals.

A switching from a high-conduction state to a low-conduction state occurs in an AIN thin film containing Al nanocrystals (nc-Al) when the nc-Al is charged with electrons. The switching is explained in terms of breaking of the conductive percolation paths of the nc-AI as a result of the charging of the nc-Al. A write-once-read many times-memory (WORM) device is demonstrated based on this phenomenon. The device can be switched by charging the nc-Al with a voltage of +10 V for 100 ms, yielding a current ratio of the two memory states of more than 300 at the reading voltage of 1 V. The charged state (i.e., the low-conduction state) remains unchanged after more than 1 x 106 read cycles, and its retention time is predicted to be more than 10 years.

Charge storage behaviors of Ge nanocrystals embedded in SiO2 for the application in non-volatile memory devices.

Ge nanocrystals distributed in the SiO2 of metal-oxide-semiconductor structure are synthesized by low-energy Ge ion implantation with various energies and doses. Their charge storage behaviors are influenced by both the ion implantation dose and energy. The larger flatband voltage shift achieved by increasing either the implantation dose or energy is explained by the locations and concentration of the charge trapping sites. The smaller charge loss achieved by decreasing the implantation dose or increasing the implantation energy is explained by the co-existence of the charge leakage to the gate electrode and the lateral charge loss to the adjacent Ge nanocrystals.

Charging effect of aluminum nitride thin films containing Al nanocrystals.

In this work, the Al-rich AIN thin film is deposited on Si substrate by radio frequency (RF) sputtering to form a metal-insulator-semiconductor (MIS) structure. Al nanocrystals (nc-Al) are formed and embedded in the AIN thin film. Charge trapping/detrapping in the nc-Al leads to a shift in the flat-band voltage (VFB) of the MIS structure. The charge storage ability of the AIN thin films containing Al nanocrystals provides the possibility of memory applications. On the other hand, charge trapping in nc-Al reduces the current conduction because of the breaking of some tunneling paths due to Coulomb blockade effect and the current conduction evolves with a trend towards one-dimensional transport.

Si-based light-emitting structure synthesized with low-energy ion implantation at a low dosage.

In this work, Si-based light-emitting structures were synthesized by Si+ implantation into 30 nm thermally grown SiO2 films with a low dosage (< or =1 x 10(16)/cm2). The emission band of electroluminescence (EL) extends from 300 nm to 700 nm with a peak at around 500 nm. The onset voltage for the EL is around 5 V for the 8 keV implanted sample which is low enough for many device applications. The light emission mechanism is studied in this work. It is believed that the defects in the Si+ implanted SiO2 films are the luminescent centers responsible for the EL. In addition, it is found the light emission intensity can be affected by charge trapping in nc-Si.

Magnetron sputtered nc-Al/alpha-Al2O3 nanocomposite thin films for nonvolatile memory application.

In this paper, we developed nc-Al/a-Al2O3 nanocomposite thin films using magnetron sputtering. The nc-Al/a-Al2O3 films were sputtered on p-type Si substrates from pure Al target in gas mixture of Ar and O2. X-ray photoelectron spectroscopy and high resolution transmission electron microscope studies confirm that the nanocrystalline Al are embedded in amorphous Al2O3 matrix thus nc-Al/ a-Al2O3 nanocomposite forms. This nanocomposite thin film exhibits memory effect as a result of charge trapping.

Recent developments in tip-based nanofabrication and its roadmap.

Recent developments of tip-based nanofabrication (TBN) are reviewed. In TBN, a functionalized cantilevered-tip is the common basic apparatus for performing the tasks of nanofabrication. The nanofabrication applications of three major techniques under the TBN family: atomic force microscopy (AFM), dip-pen nanolithography (DPN), and scanning near-field optical microscopy (SNOM), are studied with the focus on their manipulability over the size, orientation, and position of the nanostructures fabricated. The nanostructures made by these techniques are selectively presented in order to illustrate the versatility and advancement of these tip-based techniques. The information reviewed and illustrated is extrapolated to form the basis for the assessment of the needs and challenges facing the TBN community in the future. A preliminary roadmap over the next seven years is then developed. The prospective approaches and focusing areas for future research and development are also discussed.