Exploring the Limits: Degradation Behavior of Lead Halide Perovskite Films under Exposure to Ultrahigh Doses of γ Rays of Up to 10 MGy.

Herein, we show that thin films of MAPbI3, FAPbI3, (CsMA)PbI3, and (CsMAFA)PbI3, where MA and FA are methylammonium and formamidinium cations, respectively, tolerate ultrahigh doses of γ rays approaching 10 MGy without significant changes in their absorption spectra. However, among the studied materials, FAPbI3 was the only one that did not form metallic lead due to its extreme radiation hardness. Infrared near-field optical microscopy revealed the radiation-induced depletion of organic cations from the grains of MAPbI3 and their accumulation at the grain boundaries, whereas FAPbI3 on the contrary lost FA cations from the grain boundaries. The multication (CsMAFA)PbI3 perovskite underwent a facile phase segregation to domains enriched with MA and FA cations, which is a principally new radiation-induced degradation pathway. Our findings suggest that the radiation hardness of the rationally designed perovskite semiconductors could go far beyond the impressive threshold of 10 MGy we set herein for FAPbI3 films, which opens many exciting opportunities for practical implementation of these materials.

Direct Nanoscale Visualization of the Electric-Field-Induced Aging Dynamics of MAPbI3 Thin Films.

Perovskite solar cells represent the most attractive emerging photovoltaic technology, but their practical implementation is limited by solar cell devices' low levels of operational stability. The electric field represents one of the key stress factors leading to the fast degradation of perovskite solar cells. To mitigate this issue, one must gain a deep mechanistic understanding of the perovskite aging pathways associated with the action of the electric field. Since degradation processes are spatially heterogeneous, the behaviors of perovskite films under an applied electric field should be visualized with nanoscale resolution. Herein, we report a direct nanoscale visualization of methylammonium (MA+) cation dynamics in methylammonium lead iodide (MAPbI3) films during field-induced degradation, using infrared scattering-type scanning near-field microscopy (IR s-SNOM). The obtained data reveal that the major aging pathways are related to the anodic oxidation of I- and the cathodic reduction of MA+, which finally result in the depletion of organic species in the channel of the device and the formation of Pb. This conclusion was supported by a set of complementary techniques such as time-of-flight secondary ion mass spectrometry (ToF-SIMS), photoluminescence (PL) microscopy, scanning electron microscopy (SEM) and energy-dispersive X-ray (EDX) microanalysis. The obtained results demonstrate that IR s-SNOM represents a powerful technique for studying the spatially resolved field-induced degradation dynamics of hybrid perovskite absorbers and the identification of more promising materials resistant to the electric field.

Enhancing Photostability of Complex Lead Halides through Modification with Antibacterial Drug Octenidine.

The high power-conversion efficiencies of hybrid perovskite solar cells encourage many researchers. However, their limited photostability represents a serious obstacle to the commercialization of this promising technology. Herein, we present an efficient method for improving the intrinsic photostability of a series of commonly used perovskite material formulations such as MAPbI3, FAPbI3, Cs0.12FA0.88PbI3, and Cs0.10MA0.15FA0.75PbI3 through modification with octenidine dihydroiodide (OctI2), which is a widely used antibacterial drug with two substituted pyridyl groups and two cationic centers in its molecular framework. The most impressive stabilizing effects were observed in the case of FAPbI3 and Cs0.12FA0.88PbI3 absorbers that were manifested in significant suppression or even blocking of the undesirable perovskite films' recrystallization and other decomposition pathways upon continuous 110 mW/cm2 light exposure. The achieved material photostability-within 9000 h for the Oct(FA)n-1PbnI3n+1 (n = 40-400) and 20,000 h for Oct(Cs0.12FA0.88)n-1PbnI3n+1 (where n = 40-400) formulations-matches the highest values ever reported for complex lead halides. It is important to note that the stabilizing effect is maintained when OctI2 is used only as a perovskite surface-modifying agent. Using a two-cation perovskite composition as an example, we showed that the performances of the solar cells based on the developed Oct(Cs0.12FA0.88)399Pb400I1201 absorber material are comparable to that of the reference devices based on the unmodified perovskite composition. These findings indicate a great potential of the proposed approach in the design of new highly photostable and efficient light absorbers. We believe that the results of this study will also help to establish important guidelines for the rational material design to improve the operational stability of perovskite solar cells.

Sn and Ge Complexes with Redox-Active Ligands as Efficient Interfacial Membrane-like Buffer Layers for p-i-n Perovskite Solar Cells.

Inverted perovskite solar cells with a p-i-n configuration have attracted considerable attention from the research community because of their simple design, insignificant hysteresis, improved operational stability, and low-temperature fabrication technology. However, this type of device is still lagging behind the classical n-i-p perovskite solar cells in terms of its power conversion efficiency. The performance of p-i-n perovskite solar cells can be increased using appropriate charge transport and buffer interlayers inserted between the main electron transport layer and top metal electrode. In this study, we addressed this challenge by designing a series of tin and germanium coordination complexes with redox-active ligands as promising interlayers for perovskite solar cells. The obtained compounds were characterized by X-ray single-crystal diffraction and/or NMR spectroscopy, and their optical and electrochemical properties were thoroughly studied. The efficiency of perovskite solar cells was improved from a reference value of 16.4% to 18.0-18.6%, using optimized interlayers of the tin complexes with salicylimine (1) or 2,3-dihydroxynaphthalene (2) ligands, and the germanium complex with the 2,3-dihydroxyphenazine ligand (4). The IR s-SNOM mapping revealed that the best-performing interlayers form uniform and pinhole-free coatings atop the PC61BM electron-transport layer, which improves the charge extraction to the top metal electrode. The obtained results feature the potential of using tin and germanium complexes as prospective materials for improving the performance of perovskite solar cells.

Advanced Nonvolatile Organic Optical Memory Using Self-Assembled Monolayers of Porphyrin-Fullerene Dyads.

Photo-switchable organic field-effect transistors (OFETs) represent an important platform for designing memory devices for a diverse array of products including security (brand-protection, copy-protection, keyless entry, etc.), credit cards, tickets, and multiple wearable organic electronics applications. Herein, we present a new concept by introducing self-assembled monolayers of donor-acceptor porphyrin-fullerene dyads as light-responsive triggers modulating the electrical characteristics of OFETs and thus pave the way to the development of advanced nonvolatile optical memory. The devices demonstrated wide memory windows, high programming speeds, and long retention times. Furthermore, we show a remarkable effect of the orientation of the fullerene-polymer dyads at the dielectric/semiconductor interface on the device behavior. In particular, the dyads anchored to the dielectric by the porphyrin part induced a reversible photoelectrical switching of OFETs, which is characteristic of flash memory elements. On the contrary, the devices utilizing the dyad anchored by the fullerene moiety demonstrated irreversible switching, thus operating as read-only memory (ROM). A mechanism explaining this behavior is proposed using theoretical DFT calculations. The results suggest the possibility of revisiting hundreds of known donor-acceptor dyads designed previously for artificial photosynthesis or other purposes as versatile optical triggers in advanced OFET-based multibit memory devices for emerging electronic applications.

Nanoscale Visualization of Photodegradation Dynamics of MAPbI3 Perovskite Films.

Herein, we report the nanoscale visualization of the photochemical degradation dynamics of MAPbI3 (MA = CH3NH3+) using infrared scattering scanning near-field microscopy (IR s-SNOM) combined with a series of complementary analytical techniques such as UV-vis and FTIR-spectroscopy, XRD, and XPS. Light exposure of the MAPbI3 films resulted in a gradual loss of MA+ cations starting from the grain boundaries at the film surface and slowly progressing toward the center of the grains and deeper into the bulk perovskite phase. The binary lead iodide PbI2 was found to be the major perovskite photochemical degradation product under the experimental conditions used. Interestingly, the formation of the PbI2 skin over the perovskite grains resulted in a largely enhanced photoluminescence, which resembles the effects observed for core-shell quantum dots. The obtained results demonstrate that IR s-SNOM represents a powerful technique for studying the spatially resolved degradation dynamics of perovskite absorbers and revealing the associated material aging pathways.