Atomic scale structure and bond stretching force constants in stoichiometric and off-stoichiometric kesterites.

The deviation from stoichiometry and the understanding of its consequences are key factors for the application of kesterites as solar cell absorbers. Therefore, this study investigates the local atomic structure of off-stoichiometric Cu2ZnSnS4 (CZTS), Cu2ZnSnSe4 (CZTSe) and Cu2ZnGeSe4 (CZGSe) by means of Extended X-ray Absorption Fine Structure Spectroscopy. Temperature dependent measurements yield the bond stretching force constants of all cation-anion bonds in stoichiometric CZTS and CZTSe and nearly stoichiometric CZGSe. Low temperature measurements allow high precision analysis of the influence of off-stoichiometry on the element specific average bond lengths and their variances. The overall comparison between the materials is in excellent agreement with measures like ionic/atomic radii and bond ionicities. Furthermore, the small uncertainties allow the identification of systematic trends in the Cu-Se and Zn-Se bond lengths of CZTSe and CZGSe. These trends are discussed in context of the types and concentrations of certain point defects, which gives insight into the possible local configurations and their influence on the average structural parameters. The findings complement the understanding of the effect of off-stoichiometry on the local structure of kesterites, which affects their electronic properties and thus their application for solar cells.

The kesterite-stannite structural transition as a way to avoid Cu/Zn disorder in kesterites: the exemplary case of the Cu2(Zn,Mn)SnSe4.

The solid solution series between Cu2ZnSnSe4, crystallizing in the kesterite type structure, and Cu2MnSnSe4, adopting the stannite type structure, i.e. Cu2(Zn1-xMnx)SnSe4, was studied by a combination of neutron and X-ray powder diffraction. Powder samples with 0 ≤ x ≤ 1 were synthesized by the solid state reaction of the pure elements and it was confirmed by wavelength-dispersive X-ray spectroscopy that each contained a homogeneous, off-stoichiometric quaternary phase. The lattice parameters and cation site occupancy factors were determined simultaneously by the Rietveld analysis of the neutron and X-ray powder diffraction data. The refined site occupancy factors were used to determine the average neutron scattering length of the cation sites in the crystal structure of the Cu2(Zn1-xMnx)SnSe4 mixed crystals, from which a cation distribution model was derived. For the end member Cu2ZnSnSe4, the disordered kesterite structure was confirmed and for Cu2MnSnSe4, the stannite structure was confirmed. The cross-over from the kesterite to stannite type structure by Zn2+ ↔ Mn2+ substitution in the Cu2Zn1-xMnxSnSe4 solid solution can be seen as a cation re-distribution process among the positions (0, 0, 0), (0, ½, ») and (0, », ¾), including Cu+, Zn2+ and Mn2+. The Sn4+ cation does not take part in this process and remains on the 2b site. Moreover, the cross-over is also visible in the ratio of the lattice parameters c/(2a), showing a characteristic dependence on the chemical composition. The order parameter Q, the quantitative measure of Cu/BII disorder (BII = Zn and Mn), shows a distinct dependence on the Mn/(Mn + Zn) ratio. In Zn-rich Cu2(Zn1-xMnx)SnSe4 mixed crystals, the order parameter Q ∼ 0.7 and drops to Q ∼ 0 (complete Cu/BII disorder) in the compositional region 0.3 ≥ x ≥ 0.7. In Mn-rich Cu2(Zn1-xMnx)SnSe4 mixed crystals, adopting the stannite type structure, the order parameter reaches almost Q ∼ 1 (order). Thus, it can be concluded that only Mn-rich Cu2(Zn1-xMnx)SnSe4 mixed crystals do not show Cu/BII disorder. A similar trend of the dependence on the chemical composition of both Cu/BII-disorder and the band gap energy Eg in Cu2(Zn1-xMnx)SnSe4 mixed crystals was observed.

Role of S and Se atoms on the microstructural properties of kesterite Cu2ZnSn(S(x)Se(1-x))4 thin film solar cells.

Microstructural properties of Cu2ZnSn(S(x)Se(1-x))4 kesterite solid solutions were investigated using grazing incidence X-ray diffraction for the full interval of anion compositions in order to explore the influence of S and Se atoms on the thin film morphology. Thin films were prepared by sputtering deposition of metallic precursors, which were then submitted to a high temperature sulfo-selenization process. By adjusting process parameters samples from sulfur- to selenium-pure (0 ≤ x ≤ 1) were made. Microstructural analysis shows a strong dependence of domain size and microstrain on composition. Both values increase with higher sulfur content, and depth profile analysis by grazing incidence X-ray diffraction shows selenium-rich films tend to have a more homogeneous depth distribution of domain size. The increasing trend in domain size of S-rich absorbers can be related to lower formation energies of the sulfur binary phases leading to formation of kesterites, while the increase in the microstrain is explained by the substitution of larger Se atoms with smaller S atoms in the host lattice and the presence of secondary phases.

BaZrS3 Chalcogenide Perovskite Thin Films by H2S Sulfurization of Oxide Precursors.

The earth-abundant ternary compound BaZrS3, which crystallizes in the perovskite-type structure, has come into view as a promising candidate for photovoltaic applications. We present the synthesis and characterization of polycrystalline perovskite-type BaZrS3 thin films. BaZrO3 precursor layers were deposited by pulsed laser deposition and sulfurized at various temperatures in an argon-diluted H2S atmosphere. We observe increasing incorporation of sulfur for higher annealing temperatures, accompanied by a red shift of the absorption edge, with a bandgap of Eg = 1.99 eV and a large absorption strength >105 cm-1 obtained for sulfurization temperatures of 1000 °C. X-ray diffraction analysis and SEM indicate enhanced crystallization at the higher annealing temperatures, but no evidence for a crystalline solid solution between the BaZrO3 and BaZrS3 phases is found. The charge carrier sum mobility estimated from optical-pump-terahertz-probe spectroscopy indicates increasing mobilities with increasing sulfurization temperature, reaching maximum values of up to ∼2 cm2 V-1 s-1.

Cation distribution in Cu2ZnSnSe4, Cu2FeSnS4 and Cu2ZnSiSe4 by multiple-edge anomalous diffraction.

Multiple-Edge Anomalous Diffraction (MEAD) has been applied to various quaternary sulfosalts belonging to the adamantine compound family in order to validate the distribution of copper, zinc and iron cations in the structure. Semiconductors from this group of materials are promising candidates for photovoltaic applications. Their properties strongly depend on point defects, in particular related to cation order-disorder. However, Cu+, Zn2+ and Fe2+ have very similar scattering factors and are all but indistinguishable in usual X-ray diffraction experiments. Anomalous diffraction utilizes the dependency of the atomic scattering factors f' and f'' of the energy of the radiation, especially close to the element-specific absorption edges. In the MEAD technique, individual Bragg peaks are tracked over an absorption edge. The intensity changes depending on the structure factor can be highly characteristic for Miller indices selected for a specific structural problem, but require very exact measurements. Beamline KMC-2 at synchrotron BESSY II, Berlin, has been recently upgraded for this technique. Anomalous X-ray powder diffraction and XAFS compliment the data. Application of this technique confirmed established cation distribution in Cu2ZnSnSe4 (CZTSe) and Cu2FeSnS4 (CFTS). In contrast to the literature, cation distribution in Cu2ZnSiSe4 (CZSiSe) is shown to adopt a highly ordered wurtz-kesterite structure type.