Measurement of the Spin Absorption Anisotropy in Lateral Spin Valves.

The spin absorption process in a ferromagnetic material depends on the spin orientation relative to the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateral spin valve, we evidence and quantify a sizable orientation dependence of the spin absorption in Co, CoFe, and NiFe. These experiments allow us to determine the spin-mixing conductance, an elusive but fundamental parameter of the spin-dependent transport. We show that the obtained values cannot be understood within a model considering only the Larmor, transverse decoherence, and spin diffusion lengths, and rather suggest that the spin-mixing conductance is actually limited by the Sharvin conductance.

Erratum: Fast Domain Wall Motion Governed by Topology and Œrsted Fields in Cylindrical Magnetic Nanowires [Phys. Rev. Lett. 123, 217201 (2019)].

This corrects the article DOI: 10.1103/PhysRevLett.123.217201.

Fast Domain Wall Motion Governed by Topology and Œrsted Fields in Cylindrical Magnetic Nanowires.

While the usual approach to tailor the behavior of condensed matter and nanosized systems is the choice of material or finite-size or interfacial effects, topology alone may be the key. In the context of the motion of magnetic domain walls (DWs), known to suffer from dynamic instabilities with low mobilities, we report unprecedented velocities >600 m/s for DWs driven by spin-transfer torques in cylindrical nanowires made of a standard ferromagnetic material. The reason is the robust stabilization of a DW type with a specific topology by the Œrsted field associated with the current. This opens the route to the realization of predicted new physics, such as the strong coupling of DWs with spin waves above >600 m/s.

Modeling magnetic-field-induced domain wall propagation in modulated-diameter cylindrical nanowires.

Domain wall propagation in modulated-diameter cylindrical nanowires is a key phenomenon to be studied with a view to designing three-dimensional magnetic memory devices. This paper presents a theoretical study of transverse domain wall behavior under the influence of a magnetic field within a cylindrical nanowire with diameter modulations. In particular, domain wall pinning close to the diameter modulation was quantified, both numerically, using finite element micromagnetic simulations, and analytically. Qualitative analytical model for gently sloping modulations resulted in a simple scaling law which may be useful to guide nanowire design when analyzing experiments. It shows that the domain wall depinning field value is proportional to the modulation slope.