Microheater Actuators as a Versatile Platform for Strain Engineering in 2D Materials.

We present microfabricated thermal actuators to engineer the biaxial strain in two-dimensional (2D) materials. These actuators are based on microheater circuits patterned onto the surface of a polymer with a high thermal expansion coefficient. By running current through the microheater one can vary the temperature of the polymer and induce a controlled biaxial expansion of its surface. This controlled biaxial expansion can be transduced to biaxial strain to 2D materials, placed onto the polymer surface, which in turn induces a shift of the optical spectrum. Our thermal strain actuators can reach a maximum biaxial strain of 0.64%, and they can be modulated at frequencies up to 8 Hz. The compact geometry of these actuators results in a negligible spatial drift of 0.03 µm/°C, which facilitates their integration in optical spectroscopy measurements. We illustrate the potential of this strain engineering platform to fabricate a strain-actuated optical modulator with single-layer MoS2.

Experimental Observation of Current Reversal in a Rocking Brownian Motor.

A reversal of the particle current in overdamped rocking Brownian motors was predicted more than 20 years ago; however, an experimental verification and a deeper insight into this noise-driven mechanism remained elusive. Here, we investigate the high-frequency behavior of a rocking Brownian motor for 60 nm gold spheres based on electrostatic interaction in a 3D-shaped nanofluidic slit and electro-osmotic forcing of the particles. We measure the particle probability density in situ with 10 nm spatial and 250 µs temporal resolution and compare it with theory. At a driving frequency of 250 Hz, we observe a current reversal that can be traced to the asymmetric and increasingly static probability density at high frequencies.

Fast turnaround fabrication of silicon point-contact quantum-dot transistors using combined thermal scanning probe lithography and laser writing.

The fabrication of high-performance solid-state silicon quantum-devices requires high resolution patterning with minimal substrate damage. We have fabricated room temperature (RT) single-electron transistors (SETs) based on point-contact tunnel junctions using a hybrid lithography tool capable of both high resolution thermal scanning probe lithography and high throughput direct laser writing. The best focal z-position and the offset of the tip- and the laser-writing positions were determined in situ with the scanning probe. We demonstrate <100 nm precision in the registration between the high resolution and high throughput lithographies. The SET devices were fabricated on degenerately doped n-type >1020/cm3 silicon on insulator chips using a CMOS compatible geometric oxidation process. The characteristics of the three devices investigated were dominated by the presence of Si nanocrystals or phosphorous atoms embedded within the SiO2, forming quantum dots (QDs). The small size and strong localisation of electrons on the QDs facilitated SET operation even at RT. Temperature measurements showed that in the range 300 K > T > âˆ¼100 K, the current flow was thermally activated but at <100 K, it was dominated by tunnelling.

Electrical characteristics of silicon nanowire transistors fabricated by scanning probe and electron beam lithographies.

Silicon nanowire (SiNW) field-effect transistors have been fabricated by oxidation scanning probes and electron beam lithographies. The analysis and comparison of the electron mobility and subthreshold swing shows that the device performance is not affected by the top-down fabrication method. The two methods produce silicon nanowire transistors with similar electrical features, although oxidation scanning probe lithography generates nanowires with smaller channel widths. The values of the electron mobility and the subthreshold swing, 200 cm(2) V(-1) s(-1) and 500 mV dec(-1), respectively, are similar to those obtained from bottom-up methods. The compatibility of top-down methods with CMOS (complementary metal-oxide-semiconductor) procedures, the good electrical properties of the nanowire devices and the potential for making sub-10 nanowires, in particular by using oxidation scanning probe lithography, make those methods attractive for device fabrication.

Laser-Induced Graphene Microsupercapacitors: Structure, Quality, and Performance.

Laser-induced graphene (LIG) is a graphenic material synthesized from a polymeric substrate through point-by-point laser pyrolysis. It is a fast and cost-effective technique, and it is ideal for flexible electronics and energy storage devices, such as supercapacitors. However, the miniaturization of the thicknesses of the devices, which is important for these applications, has still not been fully explored. Therefore, this work presents an optimized set of laser conditions to fabricate high-quality LIG microsupercapacitors (MSC) from 60 µm thick polyimide substrates. This is achieved by correlating their structural morphology, material quality, and electrochemical performance. The fabricated devices show a high capacitance of 22.2 mF/cm2 at 0.05 mA/cm2, as well as energy and power densities comparable to those of similar devices that are hybridized with pseudocapacitive elements. The performed structural characterization confirms that the LIG material is composed of high-quality multilayer graphene nanoflakes with good structural continuity and an optimal porosity.

Comparison of Thermal and Laser-Reduced Graphene Oxide Production for Energy Storage Applications.

A way to obtain graphene-based materials on a large-scale level is by means of chemical methods for the oxidation of graphite to obtain graphene oxide (GO), in combination with thermal, laser, chemical and electrochemical reduction methods to produce reduced graphene oxide (rGO). Among these methods, thermal and laser-based reduction processes are attractive, due to their fast and low-cost characteristics. In this study, first a modified Hummer's method was applied to obtain graphite oxide (GrO)/graphene oxide. Subsequently, an electrical furnace, a fusion instrument, a tubular reactor, a heating plate, and a microwave oven were used for the thermal reduction, and UV and CO2 lasers were used for the photothermal and/or photochemical reduction. The chemical and structural characterizations of the fabricated rGO samples were performed by Brunauer-Emmett-Teller (BET), X-ray diffraction (XRD), scanning electron microscope (SEM) and Raman spectroscopy measurements. The analysis and comparison of the results revealed that the strongest feature of the thermal reduction methods is the production of high specific surface area, fundamental for volumetric energy applications such as hydrogen storage, whereas in the case of the laser reduction methods, a highly localized reduction is achieved, ideal for microsupercapacitors in flexible electronics.

Thermal Imaging of Block Copolymers with Sub-10 nm Resolution.

Thermal silicon probes have demonstrated their potential to investigate the thermal properties of various materials at high resolution. However, a thorough assessment of the achievable resolution is missing. Here, we present a probe-based thermal-imaging technique capable of providing sub-10 nm lateral resolution at a sub-10 ms pixel rate. We demonstrate the resolution by resolving microphase-separated PS-b-PMMA block copolymers that self-assemble in 11 to 19 nm half-period lamellar structures. We resolve an asymmetry in the heat flux signal at submolecular dimensions and assess the ratio of heat flux into both polymers in various geometries. These observations are quantitatively compared with coarse-grained molecular simulations of energy transport that reveal an enhancement of transport along the macromolecular backbone and a Kapitza resistance at the internal interfaces of the self-assembled structure. This comparison discloses a tip-sample contact radius of a ≈ 4 nm and identifies combinations of enhanced intramolecular transport and Kapitza resistance.

Superlattices based on van der Waals 2D materials.

Two-dimensional (2D) materials exhibit a number of improved mechanical, optical, and electronic properties compared to their bulk counterparts. The absence of dangling bonds in the cleaved surfaces of these materials allows combining different 2D materials into van der Waals heterostructures to fabricate p-n junctions, photodetectors, and 2D-2D ohmic contacts that show unexpected performances. These intriguing results are regularly summarized in comprehensive reviews. A strategy to tailor their properties even further and to observe novel quantum phenomena consists in the fabrication of superlattices whose unit cell is formed either by two dissimilar 2D materials or by a 2D material subjected to a periodic perturbation, each component contributing with different characteristics. Furthermore, in a 2D material-based superlattice, the interlayer interaction between the layers mediated by van der Waals forces constitutes a key parameter to tune the global properties of the superlattice. The above-mentioned factors reflect the potential to devise countless combinations of van der Waals 2D material-based superlattices. In the present feature article, we explain in detail the state-of-the-art of 2D material-based superlattices and describe the different methods to fabricate them, classified as vertical stacking, intercalation with atoms or molecules, moiré patterning, strain engineering and lithographic design. We also aim to highlight some of the specific applications of each type of superlattices.