An Active and Robust Catalytic Architecture of NiCo/GaN Nanowires for Light-Driven Hydrogen Production from Methanol.

On-site hydrogen production from liquid organic hydrogen carriers e.g., methanol provides an emerging strategy for the safe storage and transportation of hydrogen. Herein, a catalytic architecture consisting of nickel-cobalt nanoclusters dispersed on gallium nitride nanowires supported by silicon for light-driven hydrogen production from methanol is reported. By correlative microscopic, spectroscopic characterizations, and density functional theory calculations, it is revealed that NiCo nanoclusters work in synergy with GaN nanowires to enable the achievement of a significantly reduced activation energy of methanol dehydrogenation by switching the potential-limiting step from *CHO → *CO to *CH3O → *CH2O. In combination with the marked photothermal effect, a high hydrogen rate of 5.62 mol·gcat-1·h-1 with a prominent turnover frequency of 43,460 h-1 is achieved at 5 Wcm-2 without additional energy input. Remarkably, the synergy between Co and Ni, in combination with the unique surface of GaN, renders the architecture with outstanding resistance to sintering and coking. The architecture thereby exhibits a high turnover number of >16,310,000 over 600 h. Outdoor testing validates the viability of the architecture for active and robust hydrogen evolution under natural concentrated sunlight. Overall, this work presents a promising architecture for on-site hydrogen production from CH3OH by virtually unlimited solar energy.

A near-resonant excitation strategy to achieve ultra-low threshold GaN polariton lasing.

A near-resonant excitation strategy is proposed and implemented in a 4-µm-thick GaN microcavity to realize an exciton-polariton condensate/lasing with low threshold. Strong exciton-photon coupling is demonstrated, and polariton lasing is realized with an ultra-low threshold excitation power density of about 13.3 W/cm2 at room temperature. Such an ultra-low threshold is ascribed to the implementation of the near-resonant optical excitation strategy, which enables acceleration of the exciton and polariton relaxation and suppression of the heat generation in the cavity, thereby reducing the energy loss and enhance the cavity excitation efficiency.

Air-Promoted Light-Driven Hydrogen Production from Bioethanol over Core/Shell Cr2O3@GaN Nanoarchitecture.

Light-driven hydrogen production from biomass derivatives offers a path towards carbon neutrality. It is often however operated with the limitations of sluggish kinetics and severe coking. Herein, a disruptive air-promoted strategy is explored for efficient and durable light-driven hydrogen production from ethanol over a core/shell Cr2O3@GaN nanoarchitecture. The correlative computational and experimental investigations show ethanol is energetically favorable to be adsorbed on the Cr2O3@GaN interface, followed by dehydrogenation toward acetaldehyde and protons by photoexcited holes. The released protons are then consumed for H2 evolution by photogenerated electrons. Afterward, O2 can be evolved into active oxygen species and promote the deprotonation and C-C cleavage of the key C2 intermediate, thus significantly lowering the reaction energy barrier of hydrogen evolution and removing the carbon residual with inhibited overoxidation. Consequently, hydrogen is produced at a high rate of 76.9 mole H2 per gram Cr2O3@GaN per hour by only feeding ethanol, air, and light, leading to the achievement of a turnover number of 266,943,000 mole H2 per mole Cr2O3 over a long-term operation of 180 hours. Notably, an unprecedented light-to-hydrogen efficiency of 17.6 % is achieved under concentrated light illumination. The simultaneous generation of aldehyde from ethanol dehydrogenation enables the process more economically promising.

Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer.

It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~1013 cm−2 on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. In this paper, the response of hydrogen sensors based on Mg-doped InN films (InN:Mg) grown by molecular beam epitaxy has been investigated. The sensor exhibits a resistance variation ratio of 16.8% with response/recovery times of less than 2 min under exposure to 2000 ppm H2/air at 125 °C, which is 60% higher in the magnitude of response than the one based on the as-grown InN film. Hall-effect measurement shows that the InN:Mg with suitable Mg doping level exhibits larger sheet resistance, which accords with buried p-type conduction in the InN bulk. This work shows the advantage of InN:Mg and signifies its potential for sensing application.

Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaN.

Intense emission from an InGaN quantum disc (QDisc) embedded in a GaN nanowire p-n junction is directly resolved by performing cathodoluminescence spectroscopy. The luminescence observed from the p-type GaN region is exclusively dominated by the emission at 380 nm, which has been usually reported as the emission from Mg induced impurity bands. Here, we confirm that the robust emission from 380 nm is actually not due to the Mg induced impurity bands, but rather due to being the recombination between electrons in the QDisc and holes in the p-type GaN. This identification helps to get a better understanding of the confused luminescence from nanowires with thin QDiscs embedded for fabricating electrically driven single photon emitters.

Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires.

Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about 2-fold larger in magnitude than those on the (0001̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.

Origin of Improved Optical Quality of Monolayer Molybdenum Disulfide Grown on Hexagonal Boron Nitride Substrate.

Monolayer MoS2 is synthesized on hexagonal boron nitride (h-BN) flakes with a simple, high-yield method. Monolayer MoS2 on h-BN exhibits improved optical quality. Combining the theoretical and experimental analysis, it is concluded that the enhanced photoluminescence and Raman intensities of monolayer MoS2 probably originate from the relatively weak doping effect from the h-BN substrate rather than the optical interference effect.

Ceria nanoparticles: biomedical applications and toxicity. / 二氧化铈纳米颗粒：生物医学应用和毒性.

Ceria nanoparticles (CeO2 NPs) have become popular materials in biomedical and industrial fields due to their potential applications in anti-oxidation, cancer therapy, photocatalytic degradation of pollutants, sensors, etc. Many methods, including gas phase, solid phase, liquid phase, and the newly proposed green synthesis method, have been reported for the synthesis of CeO2 NPs. Due to the wide application of CeO2 NPs, concerns about their adverse impacts on human health have been raised. This review covers recent studies on the biomedical applications of CeO2 NPs, including their use in the treatment of various diseases (e.|g., Alzheimer's disease, ischemic stroke, retinal damage, chronic inflammation, and cancer). CeO2 NP toxicity is discussed in terms of the different systems of the human body (e.|g., cytotoxicity, genotoxicity, respiratory toxicity, neurotoxicity, and hepatotoxicity). This comprehensive review covers both fundamental discoveries and exploratory progress in CeO2 NP research that may lead to practical developments in the future.

Utilizing full-spectrum sunlight for ammonia decomposition to hydrogen over GaN nanowires-supported Ru nanoparticles on silicon.

Photo-thermal-coupling ammonia decomposition presents a promising strategy for utilizing the full-spectrum to address the H2 storage and transportation issues. Herein, we exhibit a photo-thermal-catalytic architecture by assembling gallium nitride nanowires-supported ruthenium nanoparticles on a silicon for extracting hydrogen from ammonia aqueous solution in a batch reactor with only sunlight input. The photoexcited charge carriers make a predomination contribution on H2 activity with the assistance of the photothermal effect. Upon concentrated light illumination, the architecture significantly reduces the activation energy barrier from 1.08 to 0.22 eV. As a result, a high turnover number of 3,400,750 is reported during 400 h of continuous light illumination, and the H2 activity per hour  is nearly 1000 times higher than that under the pure thermo-catalytic conditions. The reaction mechanism is extensively studied by coordinating experiments, spectroscopic characterizations, and density functional theory calculation. Outdoor tests validate the viability of such a multifunctional architecture for ammonia decomposition toward H2 under natural sunlight.

Photo-thermal synergistic CO2 hydrogenation towards CO over PtRh bimetal-decorated GaN nanowires/Si.

Photo-thermal-synergistic hydrogenation is a promising strategy for upcycling carbon dioxide into fuels and chemicals by maximally utilizing full-spectrum solar energy. Herein, by immobilizing Pt-Rh bimetal onto a well-developed GaN NWs/Si platform, CO2 was photo-thermo-catalytically hydrogenated towards CO under concentrated light illumination without extra energies. The as-designed architecture demonstrates a considerable CO evolution rate of 11.7 mol gGaN-1 h-1 with a high selectivity of 98.5% under concentrated light illumination of 5.3 W cm-2, leading to a benchmark turnover frequency of 26 486 mol CO per mol PtRh per hour. It is nearly 2-3 orders of magnitude higher than that of pure thermal catalysis under the same temperature by external heating without light. Control experiments, various spectroscopic characterization methods, and density functional theory calculations are correlatively conducted to reveal the origin of the remarkable performance as well as the photo-thermal enhanced mechanism. It is found that the recombination of photogenerated electron-hole pairs is dramatically inhibited under high temperatures arising from the photothermal effect. More critically, the synergy between photogenerated carriers arising from ultraviolet light and photoinduced heat arising from visible- and infrared light enables a sharp reduction of the apparent activation barrier of CO2 hydrogenation from 2.09 downward to 1.18 eV. The evolution pathway of CO2 hydrogenation towards CO is also disclosed at the molecular level. Furthermore, compared to monometallic Pt, the introduction of Rh further reduces the desorption energy barrier of *CO by optimizing the electronic properties of Pt, thus enabling the achievement of excellent activity and selectivity. This work provides new insights into CO2 hydrogenation by maximally utilizing full-spectrum sunlight via photo-thermal synergy.

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene.

Transferred graphene provides a promising III-nitride semiconductor epitaxial platform for fabricating multifunctional devices beyond the limitation of conventional substrates. Despite its tremendous fundamental and technological importance, it remains an open question on which kind of epitaxy is preferred for single-crystal III-nitrides. Popular answers to this include the remote epitaxy where the III-nitride/graphene interface is coupled by nonchemical bonds, and the quasi-van der Waals epitaxy (quasi-vdWe) where the interface is mainly coupled by covalent bonds. Here, we show the preferred one on wet-transferred graphene is quasi-vdWe. Using aluminum nitride (AlN), a strong polar III-nitride, as an example, we demonstrate that the remote interaction from the graphene/AlN template can inhibit out-of-plane lattice inversion other than in-plane lattice twist of the nuclei, resulting in a polycrystalline AlN film. In contrast, quasi-vdWe always leads to single-crystal film. By answering this long-standing controversy, this work could facilitate the development of III-nitride semiconductor devices on two-dimensional materials such as graphene.

Forecasting and Planning Method for Taxi Travel Combining Carbon Emission and Revenue Factors-A Case Study in China.

The efficiency and emission levels of taxi operations are influenced by taxi drivers' empirical judgments of hotspot travel areas. In this study, we exploited vehicle specific power (VSP) approaches and taxi trajectory data in a 1000 × 1000 m grid to calculate emission and revenue efficiency-related indicators and explored their spatial and temporal characteristics. Then, the entropy weight TOPSIS method was employed to identify the grids with the top comprehensive ranking of the indicators in the period to replace the driver experience. Finally, the k-means clustering method was utilized to identify the recommended road segments in the hotspot grid. The data from Nanchang City in China showed the following. (1) The study area was divided into 7553 grids, and the main travel and emission areas were located in the West Lake, Qingyunpu and Qingshan Lake districts (less than 200 grids). However, revenue efficiency-related indicators in this region are at a moderately low level. For example, the order revenue was about 0.9-1.2 RMB/min, and the average was 1.3-1.5 RMB/min. Areas with high trip demand had low revenue efficiency. (2) Five indicators related to emissions and revenue efficiency were selected. Of these, grid boarding points (G-bp) maintained the highest weight, reaching a maximum of 0.48 from 7:00 a.m. to 9:00 a.m. The ranking of secondary indicators was time varying. Hotspot grids and road segments were identified within each period. For example, from 1:00 a.m. to 3:00 a.m., (66,65), (68,65) were identified as hotspot grids. People's Park North Gate near the road was identified as the recommended section from 1:00 a.m. to 3:00 a.m. This study can provide recommended grids and sections for idle cruising taxis.

Cathodoluminescence Spectroscopy in Graded InxGa1-xN.

InGaN materials are widely used in optoelectronic devices due to their excellent optical properties. Since the emission wavelength of the full-composition-graded InxGa1-xN films perfectly matches the solar spectrum, providing a full-spectrum response, this makes them suitable for the manufacturing of high-efficiency optoelectronic devices. It is extremely important to study the optical properties of materials, but there are very few studies of the luminescence of full-composition-graded InxGa1-xN ternary alloy. In this work, the optical properties of full-composition-graded InxGa1-xN films are studied by cathodoluminescence (CL). The CL spectra with multiple luminescence peaks in the range of 365-1000 nm were acquired in the cross-sectional and plan-view directions. The CL spectroscopy studies were carried out inside and outside of microplates formed under the indium droplets on the InGaN surface, which found that the intensity of the light emission peaks inside and outside of microplates differed significantly. Additionally, the paired defects structure is studied by using the spectroscopic method. A detailed CL spectroscopy study paves the way for the growth and device optimization of high-quality, full-composition-graded InxGa1-xN ternary alloy materials.

Oxynitride-surface engineering of rhodium-decorated gallium nitride for efficient thermocatalytic hydrogenation of carbon dioxide to carbon monoxide.

Upcycling of carbon dioxide towards fuels and value-added chemicals poses an opportunity to overcome challenges faced by depleting fossil fuels and climate change. Herein, combining highly controllable molecular beam epitaxy growth of gallium nitride (GaN) under a nitrogen-rich atmosphere with subsequent air annealing, a tunable platform of gallium oxynitride (GaN1-xOx) nanowires is built to anchor rhodium (Rh) nanoparticles for carbon dioxide hydrogenation. By correlatively employing various spectroscopic and microscopic characterizations, as well as density functional theory calculations, it is revealed that the engineered oxynitride surface of GaN works in synergy with Rh to achieve a dramatically reduced energy barrier. Meanwhile, the potential-determining step is switched from *COOH formation into *CO desorption. As a result, significantly improved CO activity of 127 mmol‧gcat-1‧h-1 is achieved with high selectivity of >94% at 290 °C under atmospheric pressure, which is three orders of magnitude higher than that of commercial Rh/Al2O3. Furthermore, capitalizing on the high dispersion of the Rh species, the architecture illustrates a decent turnover frequency of 270 mol CO per mol Rh per hour over 9 cycles of operation. This work presents a viable strategy for promoting CO2 refining via surface engineering of an advanced support, in collaboration with a suitable metal cocatalyst.

Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate.

Near-infrared stimulated emission from a high-quality InN layer under optical pumping was observed with a threshold excitation power density of 0.3 and 4 kW cm-2 at T = 8 and 77 K, respectively. To achieve such a low threshold power density, vicinal GaN substrates were used to reduce the edge-component threading dislocation (ETD) density of the InN film. Cross-sectional transmission electron microscopy images reveal that the annihilation of ETDs can be divided into two steps, and the ETD density can be reduced to approximately 5 × 108 cm-2 near the surface of the 5-µm-thick film. The well-resolved phonon replica of the band-to-band emission in the photoluminescence spectra at 9 K confirm the high quality of the InN film. As a result, the feasibility of InN-based photonic structures and the underlying physics of their growth and emission properties are demonstrated.

Atomic-Scale Investigation of the Lattice-Asymmetry-Driven Anisotropic Sublimation in GaN.

Thermal sublimation, a specific method to fabricate semiconductor nanowires, is an effective way to understand growth behavior as well. Utilizing a high-resolution transmission electron microscope (TEM) with in situ heating capability, the lattice-asymmetry-driven anisotropic sublimation behavior is demonstrated of wurtzite GaN: sublimation preferentially occurs along the [ 000 1 ¯ $000\bar{1}$ ] and [0001] directions in both GaN thin films and nanowires. Hexagonal pyramidal nanostructures consisting of six semipolar { 1 1 ¯ 01 } $\{ {1\bar{1}01} \}$ planes and one (000 1 ¯ $\bar{1}$ ) plane with the apex pointing to the [0001] direction are generated as a sublimation-induced equilibrium crystal structure, which is consistent with the lattice-asymmetry-driven growth behaviors in wurtzite GaN. These findings offer a new insight into the thermal stability of wurtzite GaN and provide essential background for tailoring the structure of III-nitrides for atomic-scale manufacturing.

Lattice Polarity Manipulation of Quasi-vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration.

Quasi van der Waals epitaxy, a pioneering epitaxy of sp3 -hybridized semiconductor films on sp2 -hybridized 2D materials, provides a way, in principle, to achieve single-crystal epilayers with preferred atom configurations that are free of substrate. Unfortunately, this has not been experimentally confirmed in the case of the hexagonal semiconductor III-nitride epilayer until now. Here, it is reported that the epitaxy of gallium nitride (GaN) on graphene can tune the atom arrangement (lattice polarity) through manipulation of the interface atomic configuration, where GaN films with gallium and nitrogen polarity are achieved by forming CONGa(3) or COGaN(3) configurations, respectively, on artificial CO surface dangling bonds by atomic oxygen pre-irradiation on trilayer graphene. Furthermore, an aluminum nitride buffer/interlayer leads to unique metal polarity due to the formation of an AlON thin layer in a growth environment containing trace amounts of oxygen, which explains the open question of why those reported wurtzite III-nitride films on 2D materials always exhibit metal polarity. The reported atomic modulation through interface manipulation provides an effective model for hexagonal nitride semiconductor layers grown on graphene, which definitely promotes the development of novel semiconductor devices.

Deep-Ultraviolet Micro-LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously.

Deep-ultraviolet (DUV) solar-blind communication (SBC) shows distinct advantages of non-line-of-sight propagation and background noise negligibility over conventional visible-light communication. AlGaN-based DUV micro-light-emitting diodes (µ-LEDs) are an excellent candidate for a DUV-SBC light source due to their small size, low power consumption, and high modulation bandwidth. A long-haul DUV-SBC system requires the light source exhibiting high output power, high modulation bandwidth, and high rate, simultaneously. Such a device is rarely reported. A parallel-arrayed planar (PAP) approach is here proposed to satisfy those requirements. By reducing the dimensions of the active emission mesa to micrometer scale, DUV µ-LEDs with ultrahigh power density are created due to their homogeneous injection current and enhanced planar isotropic light emission. Interconnected PAP µ-LEDs with a diameter of 25 µm are produced. This device has an output power of 83.5 mW with a density of 405 W cm-2 at 230 mA, a wall-plug efficiency (WPE) of 4.7% at 155 mA, and a high -3 dB modulation bandwidth of 380 MHz. The remarkable high output power and efficiency make those devices a reliable platform to develop high-modulation-bandwidth wireless communication and to meet the requirements for bio-elimination.

Hexagonal BN-Assisted Epitaxy of Strain Released GaN Films for True Green Light-Emitting Diodes.

Epitaxial growth of III-nitrides on 2D materials enables the realization of flexible optoelectronic devices for next-generation wearable applications. Unfortunately, it is difficult to obtain high-quality III-nitride epilayers on 2D materials such as hexagonal BN (h-BN) due to different atom hybridizations. Here, the epitaxy of single-crystalline GaN films on the chemically activated h-BN/Al2O3 substrates is reported, paying attention to interface atomic configuration. It is found that chemical-activated h-BN provides B-O-N and N-O bonds, where the latter ones act as effective artificial dangling bonds for following GaN nucleation, leading to Ga-polar GaN films with a flat surface. The h-BN is also found to be effective in modifying the compressive strain in GaN film and thus improves indium incorporation during the growth of InGaN quantum wells, resulting in the achievement of pure green light-emitting diodes. This work provides an effective way for III-nitrides epitaxy on h-BN and a possible route to overcome the epitaxial bottleneck of high indium content III-nitride light-emitting devices.

Large-Scale Synthesis and Systematic Photoluminescence Properties of Monolayer MoS2 on Fused Silica.

Monolayer MoS2, with fascinating mechanical, electrical, and optical properties, has generated enormous scientific curiosity and industrial interest. Controllable and scalable synthesis of monolayer MoS2 on various desired substrates has significant meaning in both basic scientific research and device application. Recent years have witnessed many advances in the direct synthesis of single-crystalline MoS2 flakes or their polycrystalline aggregates on numerous diverse substrates, such as SiO2-Si, mica, sapphire, h-BN, and SrTiO3, etc. In this work, we used the dual-temperature-zone atmospheric-pressure chemical vapor deposition method to directly synthesize large-scale monolayer MoS2 on fused silica, the most ordinary transparent insulating material in daily life. We systematically investigated the photoluminescence (PL) properties of monolayer MoS2 on fused silica and SiO2-Si substrates, which have different thermal conductivity coefficients and thermal expansion coefficients. We found that there exists a stronger strain on monolayer MoS2 grown on fused silica, and the strain becomes more obvious as temperature decreases. Moreover, the monolayer MoS2 grown on fused silica exhibits the unique trait of a fractal shape with tortuous edges and has stronger adsorbability. The monolayer MoS2 grown on fused silica may find application in sensing, energy storage, and transparent optoelectronics, etc.