RESUMEN
We demonstrate optical spin polarization of the neutrally charged silicon-vacancy defect in diamond (SiV^{0}), an S=1 defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but nonzero at below-resonant energies. We measure an ensemble spin coherence time T_{2}>100 µs at low-temperature, and a spin relaxation limit of T_{1}>25 s. Optical spin-state initialization around 946 nm allows independent initialization of SiV^{0} and NV^{-} within the same optically addressed volume, and SiV^{0} emits within the telecoms down-conversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that SiV^{0} is a promising candidate for a long-range quantum communication technology.
RESUMEN
The defect in diamond formed by a vacancy surrounded by three nearest-neighbor nitrogen atoms and one carbon atom, [Formula: see text], is found in the vast majority of natural diamonds. Despite [Formula: see text] being the earliest electron paramagnetic resonance spectrum observed in diamond, to date no satisfactory simulation of the spectrum for an arbitrary magnetic field direction has been produced due to its complexity. In this work, [Formula: see text] is identified in [Formula: see text]-doped synthetic diamond following irradiation and annealing. The [Formula: see text] spin Hamiltonian parameters are directly determined and used to refine the parameters for [Formula: see text], enabling the latter to be accurately simulated and fitted for an arbitrary magnetic field direction. Study of [Formula: see text] under excitation with green light indicates charge transfer between [Formula: see text] and [Formula: see text]. It is argued that this charge transfer is facilitated by direct ionization of [Formula: see text], an as-yet unobserved charge state of [Formula: see text].