Terahertz generation optimization in an OH1 nonlinear organic crystal pumped by a Cr:forsterite laser.

We present the results of experimental investigations of terahertz radiation generation conversion efficiency in an OH1 nonlinear organic crystal pumped by femtosecond laser pulses at 1240 nm wavelength. An influence of OH1 crystal thickness on the terahertz generation by optical rectification method was studied. It is shown that the optimal crystal thickness for the maximum conversion efficiency is 1 mm, which agrees with the previously made theoretical estimates.

Free-carrier generation dynamics induced by ultrashort intense terahertz pulses in silicon.

We report the results of experimental studies and numerical simulation of the dynamics of the electron-hole pairs formation in silicon under the action of a two-period terahertz pulse with a maximum electric field strength of up to 23 MV/cm. It is shown that an inhomogeneous distribution of the charge carrier concentration over the depth of the silicon sample is formed, which persists for several microseconds. This inhomogeneity is formed due to a sharp increase in the rate of filling the conduction band with free carriers in the subsurface input layer of the silicon wafer, which occurs at a field strength above 15 MV/cm.

Generation of strong-field spectrally tunable terahertz pulses.

The ideal laser source for nonlinear terahertz spectroscopy offers large versatility delivering both ultra-intense broadband single-cycle pulses and user-selectable multi-cycle pulses at narrow linewidths. Here we show a highly versatile terahertz laser platform providing single-cycle transients with tens of MV/cm peak field as well as spectrally narrow pulses, tunable in bandwidth and central frequency across 5 octaves at several MV/cm field strengths. The compact scheme is based on optical rectification in organic crystals of a temporally modulated laser beam. It allows up to 50 cycles and central frequency tunable from 0.5 to 7 terahertz, with a minimum width of 30 GHz, corresponding to the photon-energy width of ΔE=0.13 meV and the spectroscopic-wavenumber width of Δ(λ-1)=1.1 cm-1. The experimental results are excellently predicted by theoretical modelling. Our table-top source shows similar performances to that of large-scale terahertz facilities but offering in addition more versatility, multi-colour femtosecond pump-probe opportunities and ultralow timing jitter.

Broadband and narrowband laser-based terahertz source and its application for resonant and non-resonant excitation of antiferromagnetic modes in NiO.

A versatile table-top high-intense source of terahertz radiation, enabling to generate pulses of both broadband and narrowband spectra with a tunable frequency up to 3 THz is presented. The terahertz radiation pulses are generated by optical rectification of femtosecond pulses of Cr:forsterite laser setup in nonlinear organic crystal OH1. Electric field strengths of broadband and narrowband terahertz pulses were achieved close to 20 MV/cm and more than 2 MV/cm, correspondingly. Experiments on excitation of spin subsystem oscillations of an antiferromagnetic NiO were carried out. Selective excitation of 0.42 THz mode was observed for the first time at room temperature by a narrowband terahertz pulses tuned close to mode frequency.

Terahertz beam spot size measurements by a CCD camera.

We present the experimental data on the direct measurements of spatial distribution of the terahertz (THz) pulse intensity profile using a commercial silicon-based charge-coupled device (CCD) camera in the spectral range from 1-3 THz. A method to measure the dimensions of a high-intensity THz radiation beam in the focal plane using the CCD camera is proposed and experimentally verified.

Damage in a Thin Metal Film by High-Power Terahertz Radiation.

We report on the experimental observation of high-power terahertz-radiation-induced damage in a thin aluminum film with a thickness less than a terahertz skin depth. Damage in a thin metal film produced by a single terahertz pulse is observed for the first time. The damage mechanism induced by a single terahertz pulse could be attributed to thermal expansion of the film causing debonding of the film from the substrate, film cracking, and ablation. The damage pattern induced by multiple terahertz pulses at fluences below the damage threshold is quite different from that observed in single-pulse experiments. The observed damage pattern resembles an array of microcracks elongated perpendicular to the in-plane field direction. A mechanism related to microcracks' generation and based on a new phenomenon of electrostriction in thin metal films is proposed.

Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon.

The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of 8.7×1016 cm-3) are presented. We use terahertz pulses with electric field strengths up to 3.1 MV cm-1 and a pulse duration of 700 fs. A huge transmittance enhancement of ∼90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5-3.1 MV cm-1.

High efficiency THz generation in DSTMS, DAST and OH1 pumped by Cr:forsterite laser.

We investigated Terahertz generation in organic crystals DSTMS, DAST and OH1 directly pumped by a Cr:forsterite laser at central wavelength of 1.25 µm. This pump laser technology provides a laser-to-THz energy conversion efficiency higher than 3 percent. Phase-matching is demonstrated over a broad 0.1-8 THz frequency range. In our simple setup we achieved hundred µJ pulses in tight focus resulting in electric and magnetic field larger than 10 MV/cm and 3 Tesla.

Second harmonic generation in the bulk of silicon induced by an electric field of a high power terahertz pulse.

The experimental findings on the second harmonic generation (SHG) in centrosymmetric crystal silicon are reported. The SHG is induced by extremely high electric field (up to 15 MV/cm) parallel to the crystal surface of a short terahertz (THz) pulse while probing by an infrared femtosecond optical pulse. The SHG under such unique conditions is reported for the first time. At the electric field amplitude above 8 MV/cm, the quadratic dependence of the SHG yield integrated over the THz pulse duration on the electric field is violated and SHG yield is not changed with a further increase of the THz field. Saturation of SHG intensity at high electric fields is explained in terms of carrier density increase due to impact ionization and destructive interference of electric-field induced and current induced nonlinear polarizations.